Patents by Inventor Tzung-Shiun YEH

Tzung-Shiun YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200020839
    Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
  • Patent number: 10505092
    Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: December 10, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
  • Patent number: 10475962
    Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion, wherein in a top view, the first opening comprises an elongated shape defined by the first pad portion; a transparent conductive layer formed on the current blocking region and/or a surface of the semiconductor stack; and a first electrode formed above the current blocking region; wherein the transparent conductive layer comprises a second opening to expose the first opening, and the first electrode electrically connects the semiconductor stack through the first opening and the second opening.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: November 12, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Tzung-Shiun Yeh, Li-Ming Chang, Chien-Fu Shen
  • Publication number: 20180233629
    Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion and comprising an elongate shape; and a first electrode formed above the current blocking region and electrically connecting to the semiconductor stack through the first opening.
    Type: Application
    Filed: February 6, 2018
    Publication date: August 16, 2018
    Inventors: Tzung-Shiun YEH, Li-Ming CHANG, Chien-Fu SHEN
  • Publication number: 20180212123
    Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 26, 2018
    Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
  • Patent number: D853340
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: July 9, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin Ying Wang, Tzung Shiun Yeh, Cheng Yu Li, Chien Fu Shen