Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.

Abstract: Provided are a multi-channel isothermal amplification system and an operation method. The operation method comprises: a first step in which sample tubes are disposed in holes formed in a line in a heating block, respectively, wherein the heating block comprises: a first heating block area in which some of the plurality of holes are formed in a line; and a second heating block area in which the rest of the plurality of holes are formed in a line, and which is disposed to be in a line with the first heating block area, wherein the first heating block area and the second heating block area are spaced apart from each other at an interval as much as one hole area between two holes; and a second step in which an optical system moves in a longitudinal direction of the first heating block area and the second heating block area.

Abstract: A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.

Abstract: A battery cell, a battery pack and an electronic device with improved durability by reducing bend-induced damage, whereby a battery cell includes at least two battery units, each including a plurality of electrode leads, an electrode assembly, an electrolyte solution and an inner pouch in which the electrode assembly and the electrolyte solution are received, wherein at least one of the plurality of electrode leads of one battery unit is inserted into the other battery unit and electrically connected to the electrode assembly, and an outer pouch including at least two receiving portions in which the at least two battery units are received respectively, and a bending portion in which a part of the plurality of electrode leads is disposed and a part between the at least two receiving portions is bent.

Abstract: In one example, an electronic device comprises a cavity substrate comprising a substrate base comprising a top side and a bottom side and a cavity wall over the substrate base and defining a cavity, an electronic component over the substrate base and in the cavity, a lid comprising a top side and a bottom side, wherein the lid is over the substrate base and the cavity wall to define an interior of the cavity and an exterior of the cavity, an adhesive between the bottom side of the lid and a top side of the cavity wall, and a vent seal between the interior of the cavity and the exterior of the cavity. Other examples and related methods are also disclosed herein.

Abstract: The present disclosure provides a system and a method for correcting a friction coefficient of a brake pad for a vehicle, which can estimate a brake factor including a friction coefficient of a brake pad, and ultimately correct the brake factor through the calculation and the update of a brake factor offset based on the estimated brake factor, thereby enhancing the braking linearity of an electric brake system.

Abstract: Disclosed is a method for producing a diene-based graft copolymer resin, and a diene-based graft copolymer resin produced therefrom, the method including: adding, into a reactor, a polymerization solution containing a diene-based rubber polymer, an aromatic vinyl-based monomer, a vinyl cyan-based monomer, a polymerization initiator, and a reaction solvent, and polymerizing the polymerization solution to prepare a polymer; recovering a solution containing unreacted monomers and a reaction solvent from the polymerization solution, dispersing a releasing agent in the recovered solution, and then adding the solution into the front end of a volatilization tank; and removing the unreacted monomers and the reaction solvent from the volatilization tank.

Abstract: An electroluminescent display device has a plurality of pixels and each pixel includes a driving transistor having a gate connected to a first node, a source connected to a third node, and a drain connected to a fourth node, the driving transistor generating pixel current corresponding to a data voltage when a high-level source voltage is applied to the third node, an internal compensator comprising a first capacitor connected between the first node and a second node, and a second capacitor connected between the second node and an input terminal for the high-level source voltage, the internal compensator controlling a threshold voltage of the driving transistor with reference to a first scan signal, a second scan signal opposite to the first scan signal in phase, a third scan signal lagging the first scan signal in phase, a fourth scan signal leading the first scan signal in phase, and an emission signal, and a light emitting element connected between a fifth node to be connected to the fourth node and an inp

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: Provided are a method for preparing a graft copolymer and a graft copolymer prepared thereby, the method comprising: preparing a reaction solution comprising a copolymer comprising a unit derived from a diene-based monomer and a unit derived from an alkene-based monomer, an aromatic vinyl-based monomer, a vinyl cyan-based monomer, and a reaction solvent; and adding the reaction solution to perform primary bulk polymerization at 100 to 110° C., wherein the copolymer comprises the unit derived from a diene-based monomer in an amount of 5 to 10 wt %, and the graft copolymer has an average rubber particle size of 2 to 5?m.

Abstract: The present invention relates to a method for producing a diene-based graft copolymer resin, and a diene-based graft copolymer resin produced therefrom, the method including: mixing an aromatic vinyl-based monomer, a diene-based rubber polymer, and a polymerization initiator to prepare a first reactant; mixing a vinyl cyan-based monomer and an antioxidant to prepare a second reactant; adding and polymerizing the first reactant and the second reactant into a polymerization reactor to prepare a polymer; and removing unreacted monomers in a devolatilization tank.

Abstract: The present disclosure relates to a display panel and a display device using the same, and includes a first region where a plurality of pixel groups are disposed; and a second region where a plurality of pixel groups and a plurality of light transmitting parts are disposed. The plurality of pixel groups disposed in the second region are disposed between the light transmitting parts. An aspect ratio of each of the pixel groups disposed in the second region is different from that of each of the pixel groups disposed in the first region. Each of the pixel groups of the second region includes the same number of sub-pixels as each of the pixel groups of the first region.

Abstract: A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.

Abstract: An embodiment discloses a display panel and a display device including the same. The display panel includes a first display region in which a plurality of pixels are disposed, and a second display region including a plurality of pixel regions, in which a plurality of pixels are disposed, and a plurality of light-transmitting regions disposed between the plurality of pixel regions, wherein the second display region includes a plurality of first pixels disposed in the plurality of pixel regions, a plurality of second pixels disposed in the plurality of light-transmitting regions, and a plurality of first electrodes extending from the plurality of pixel regions to the plurality of light-transmitting regions to electrically connect the plurality of first pixels to the plurality of second pixels.

Abstract: A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.