Abstract: An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular ?LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: A light-emitting component is disclosed. In an embodiment a light-emitting component includes at least four light sources configured to emit light of different wavelength ranges in pairs and a control device configured to operate the light sources independently of one another in such a way that light from at least two of the light sources is mixed to form a mixed light and adjust an mv,mel,D65 value of the mixed light, wherein the at least four light sources include a first light source configured to emit electromagnetic radiation with a dominant wavelength of at most 450 nm, a second light source configured to emit electromagnetic radiation with a dominant wavelength of at least 480 nm and at most 520 nm or a dominant wavelength of at least 455 nm and at most 470 nm, a third light source configured to emit electromagnetic radiation in a spectral range of green light, and a fourth light source configured to emit electromagnetic radiation in a spectral range of yellow and/or amber light.

Abstract: An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: A light emitting device includes a radiation source for the emission of electromagnetic radiation and a converter element on which the electromagnetic radiation impinges in a first surface region and which, excited by the impinged electromagnetic radiation, emits visible light into an environment in a second surface region which differs at least partially from the first surface region. The wavelength of the light emitted into the environment differs from the wavelength of the electromagnetic radiation impinged on the converter element. The converter element includes a luminous element including a textile with a converter material. The converter material due to excitation by the electromagnetic radiation with a first wavelength emits visible light with a second wavelength differing from the first wavelength. The radiation source realizes a background illumination for the converter element. The first surface region is formed by a side surface or a back surface of the converter element.

Abstract: An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: A light-emitting component is disclosed. In an embodiment a light-emitting component includes at least four light sources configured to emit light of different wavelength ranges in pairs and a control device configured to operate the light sources independently of one another in such a way that light from at least two of the light sources is mixed to form a mixed light and adjust an mv,mel,D65 value of the mixed light, wherein the at least four light sources include a first light source configured to emit electromagnetic radiation with a dominant wavelength of at most 450 nm, a second light source configured to emit electromagnetic radiation with a dominant wavelength of at least 480 nm and at most 520 nm or a dominant wavelength of at least 455 nm and at most 470 nm, a third light source configured to emit electromagnetic radiation in a spectral range of green light, and a fourth light source configured to emit electromagnetic radiation in a spectral range of yellow and/or amber light.

Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Abstract: An apparatus for presenting an image for a heads-up display includes three arrays of light-emitting diodes, wherein the light-emitting diodes of an array are arranged and output electromagnetic beams in an emission direction of an emission side of the array, the light-emitting diodes output an electromagnetic beam with a first opening angle in the emission direction, a collimation apparatus provided on the emission side at a specified spacing in front of the array of the light-emitting diodes, wherein the collimation apparatus reduces the first opening angles of the beams of the light-emitting diodes downstream of the collimation apparatus in the emission direction to a second opening angle, the second opening angle is smaller than the first opening angle, and a combination optical unit arranged downstream of the collimation apparatus in the emission direction, the combination optical unit superposes the electromagnetic rays from the three arrays to form an image for the head-up display.

Abstract: A light assembly includes a light source, and a micromechanical shutter arrangement having a two-dimensional arrangement of closable shutter openings, wherein at least one shutter opening has a rectangular shape with a length and a width, and the length is greater than the width. The light assembly may be configured as a headlamp for a motor vehicle.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.

Abstract: A planar light guide includes a main body with a back face and a radiation outcoupling face opposite thereto, a main direction of light guidance parallel to the radiation outcoupling face, at least one plurality of identically shaped and identically oriented outcoupling structures formed on at least one of the main faces, and at least one structure main face per outcoupling structure, wherein an angle-dependent emission characteristic is provided asymmetrically in a first plane parallel to the main direction of light guidance and perpendicular to the radiation outcoupling face.

Abstract: A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.