Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Abstract: A frequency oscillator includes a ring oscillator having N inverters coupled in series, where N is an odd integer equal to three or more. A first filter is coupled between an output node of a first of the inverters and an output line of the frequency oscillator. A second filter is coupled between an output node of a second of the inverters and the output line of the frequency oscillator.

Abstract: A pixel circuit may include a detection circuit having first and second transistors coupled in series between differential output nodes of an antenna. The antenna may be configured to be sensitive to terahertz radiation. The pixel circuit may also include a capacitor coupled to an intermediate node between the first and second transistors, and control circuitry coupled to control nodes of the first and second transistors. The control circuitry may be configured for selectively applying to the control nodes a gate biasing voltage for biasing the control nodes of the first and second transistors during a detection phase of the pixel circuit, and/or a reset voltage for resetting a voltage stored by the capacitor.

Abstract: A pixel circuit including: a differential detection circuit having first and second transistors coupled in series between differential output nodes of an antenna, the antenna being configured to be sensitive to terahertz radiation, and wherein: a first main conducting node of the first transistor is coupled to a first of the differential output nodes of the antenna; and a first main conducting node of the second transistor is coupled to a second of said differential output nodes of the antenna, wherein second main conducting nodes of the first and second transistors are formed by a common semiconductor region.

Abstract: A frequency oscillator includes a ring oscillator having N inverters coupled in series, where N is an odd integer equal to three or more. A first filter is coupled between an output node of a first of the inverters and an output line of the frequency oscillator. A second filter is coupled between an output node of a second of the inverters and the output line of the frequency oscillator.

Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.

Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.

Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Abstract: An off-chip signal is provided to a differential branch-line directional coupler implemented entirely on-chip. The coupler produces differential quadrature signals, which are then buffered and applied to a quadrature mixer. The coupler is implemented entirely on-chip using microstrip transmission lines. The coupler is made up of a plurality of rings and a plurality of underpasses connecting ports of the rings, wherein each of the plurality of rings is made up of four branch lines, and each branch line having an electrical length of one-quarter wavelength at the center design frequency. Coupling between the plurality of branch lines of the rings may be varied.

Abstract: Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.

Abstract: Apparatus and methods are provided for constructing waveguide-to-transmission line transitions that provide broadband, high performance coupling of power at microwave and millimeter wave frequencies. More specifically, exemplary embodiments of the invention include wideband, low-loss and compact CPW-to-rectangular waveguide transition structures and ACPS (or CPS)-to-rectangular waveguide transition structures that are particularly suitable for microwave and millimeter wave applications.

Abstract: Apparatus and methods are provided for integrally packaging semiconductor IC (integrated circuit) chips with antennas having one or more radiating elements and tuning elements that are formed from package lead wires that are appropriated shaped and arranged to form antenna structures for millimeter wave applications.

Abstract: Apparatus and methods are provided for integrally packaging antenna devices with semiconductor IC (integrated circuit) chips, wherein IC chips are packaged with dielectric resonators antennas that are integrally constructed as part of a package molding (encapsulation) process, for example, to form compact integrated radio/wireless communications systems for millimeter wave applications.

Abstract: Apparatus and methods are provided for packaging IC chips together with integrated antenna modules designed to provide a closed EM (electromagnetic) environment for antenna radiators, thereby allowing antennas to be designed independent from the packaging technology.

Abstract: Apparatus and methods are provided for integrally packaging antennas with semiconductor IC (integrated circuit) chips to provide highly-integrated and high-performance radio/wireless communications systems for millimeter wave applications including, e.g., voice communication, data communication and radar applications. For example, wireless communication modules are constructed with IC chips having receiver/transmitter/transceiver integrated circuits and planar antennas that are integrally constructed from BEOL (back end of line) metallization structures of the IC chip.

Abstract: Printed antenna devices are provided, which can operate at RF and microwave frequencies, for example, while simultaneously providing antenna performance characteristics such as high gain/directivity/radiation efficiency, high bandwidth, hemispherical radiation patterns, impedance, etc., that render the antennas suitable for voice communication, data communication or radar applications, for example. Further, apparatus are provided for integrally packaging such printed antenna devices with IC (integrated circuit) chips (e.g., transceiver) to construct IC packages for, e.g., wireless communications applications.