Abstract: Targets or test structures used for measurements in semiconductor devices having long lines exceeding design rule limitations are divided into segments. In one embodiment, the segments have periodicity in a direction parallel to the length of the lines. In another embodiment, the segments of test structures in adjacent lines do not have periodicity in a direction parallel to the length of the lines. The lack of periodicity is achieved by staggering segments of substantially equal lengths in adjacent lines, or by dividing the lines into segments having unequal lengths. The test structures may be formed in scribe line regions or die regions of a semiconductor wafer.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: A method for the characterization of a film arranged in a plurality of regions on a substrate forms a respective optical measurement at each of a multiplicity of measurement sites in order to determine a respective measurement result, the measurement result being correlated with a film thickness on the substrate. Measurement results that satisfy a predetermined condition, which is satisfied for a measurement result that has been determined at a measurement site within one of the plurality of regions are selected. The film is characterized on the basis of the selected measurement results.

Abstract: The present invention relates to a method for the depth-resolved characterization of a layer of a carrier. This involves firstly producing a cutout in the layer of the carrier with a sidewall and subsequently removing carrier material adjoining the sidewall with the aid of an ion beam. During the removal process, images of the sidewall are recorded and material compositions of the removed carrier material are determined as well. A depth-resolved characterization of the layer of the carrier is carried out on the basis of a correlation of the determined material compositions of the removed carrier material with the recorded images of the sidewall, layer depths being assigned to the material compositions of the removed carrier material with the aid of the images of the sidewall. The invention furthermore relates to an apparatus for carrying out this method.

Abstract: The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

Abstract: The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 ?m. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: An apparatus and method for measuring feature sizes having form birefringence.

Abstract: The present invention relates to a method for the depth-resolved characterization of a layer of a carrier. This involves firstly producing a cutout in the layer of the carrier with a sidewall and subsequently removing carrier material adjoining the sidewall with the aid of an ion beam. During the removal process, images of the sidewall are recorded and material compositions of the removed carrier material are determined as well. A depth-resolved characterization of the layer of the carrier is carried out on the basis of a correlation of the determined material compositions of the removed carrier material with the recorded images of the sidewall, layer depths being assigned to the material compositions of the removed carrier material with the aid of the images of the sidewall. The invention furthermore relates to an apparatus for carrying out this method.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: In order to monitor the etching operation for a regular depth structure in a semiconductor substrate, a radiation source is used to irradiate, in large-area fashion, the semiconductor substrate in the region of the depth structure during the etching operation at a predetermined angle of incidence with respect to the surface of the semiconductor substrate with an electromagnetic radiation whose wavelength lies in the infrared region, a radiation detector is used to continuously detect the intensity of the reflected radiation at an angle of reflection—corresponding to the angle of incidence—with respect to the surface of the semiconductor substrate, and an evaluation unit is used to determine the depth of the etched structure and/or the quality of the etched structure with regard to the regularity thereof from the recorded intensity profile.

Abstract: One embodiment of the invention provides a method for determining or inspecting a lateral dimension or a volume of a recess in a layer at a surface of a substrate or a property of a material arranged in the recess. The layer having the recess is irradiated with an electromagnetic scanning radiation having a wavelength that is greater than a lateral dimension of the recess, and an electromagnetic response radiation that emerges from an interaction of the scanning radiation with the layer having the recess is received. Characterization data, which characterize the interaction between the layer having the recess and the scanning radiation, are ascertained from the received electromagnetic response radiation, the characterization data mapping the lateral dimension or the volume of the recess or the property of the material arranged in the recess.

Abstract: A method for the characterization of a film arranged in a plurality of regions on a substrate forms a respective optical measurement at each of a multiplicity of measurement sites in order to determine a respective measurement result, the measurement result being correlated with a film thickness on the substrate. Measurement results that satisfy a predetermined condition, which is satisfied for a measurement result that has been determined at a measurement site within one of the plurality of regions are selected. The film is characterized on the basis of the selected measurement results.

Abstract: The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 ?m. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.

Abstract: The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

Abstract: An a&pgr;&pgr;aratus and method for measuring feature sizes having form birefringence.

Abstract: An in-situ method for measuring the endpoint of a resist recess etch process for DRAM trench cell capacitors to determine the buried plate depth on a semiconductor wafer thereof, including: placing an IR device on the etch chamber; illuminating the surface of a semiconductor wafer during etching to a resist recess depth with IR radiation from the IR device; detecting reflection spectra from the illuminated surface of the semiconductor wafer with an IR detector; performing a frequency analysis of the reflection spectra and providing a corresponding plurality of wave numbers in response thereto; and utilizing calculating device coupled to the IR detector to calculate the resist recess depth at the illuminated portion of the wafer from the plurality of wave numbers corresponding to the reflection spectra.

Abstract: A system for measuring surface features having form birefringence in accordance with the present invention includes a radiation source for providing radiation incident on a surface having surface features. A radiation detecting device is provided for measuring characteristics of the incident radiation after being reflected from the surface features. A rotating stage rotates the surface such that incident light is directed at different angles due to the rotation of the rotating stage. A processor is included for processing the measured characteristics of the reflected light and correlating the characteristics to measure the surface features.