Abstract: Method for calibrating an apparatus for manufacturing a three-dimensional object by layer-wise selective solidification of building material with the step of generating an substantially periodic first modulation pattern in a first sub-area of the build area, the step of generating an substantially periodic second modulation pattern in a second sub-area of the build area, wherein in the overlap zone, the first modulation pattern and the second modulation pattern form an substantially periodic superposition pattern, whose period is larger than the period of the first modulation pattern and the period of the second modulation pattern, the step of detecting the superposition pattern, and the step of determining the deviation of the position of the superposition pattern on the build area from a reference position.

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Abstract: A microelectromechanical loudspeaker may include: a plurality of elementary loudspeakers each including a drive unit and a diaphragm deflectable by the drive unit, and a controller configured to respectively supply control signals to the drive units. The drive units may be respectively configured to deflect the corresponding diaphragms according to the respective control signals supplied by the controller to generate acoustic waves. The control signal supplied to at least one control unit may have at least one local extremum and a global extremum of a curvature of the control signal with a highest absolute value of the curvature may be located at a position of the control signal preceding a position of the at least one local extremum of the control signal.

Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Abstract: A MEMS sensor device comprises a support substrate, a proof mass movably connected to the support substrate, a first drive comb fixedly connected to the support substrate in a first orientation and adjacent to the proof mass, and a second drive comb fixedly connected to the support substrate in a second orientation and adjacent to the proof mass. The second orientation is opposite of the first orientation such that the first and second drive combs face toward each other. A parallel plate sense electrode is located under the proof mass on the support substrate. The drive combs and the parallel plate sense electrode are each electrically charged and configured with respect to the proof mass such that a combination of a levitation force and a parallel plate force produces a linear out-of-plane actuation that depends only on an applied voltage.

Abstract: A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

Abstract: An energy harvester for an aircraft comprises a first portion, a movable element and a kinetic-to-electric-energy-converter. The first portion includes a charge collecting device having an electrical permittivity different to that of air. The charge collecting device is configured to be exposed to an air flow. The movable element is configured to be driven by the charge of the charge collecting device, and the kinetic-to-electric-energy-converter is configured to generate energy by the movement of the movable element.

Abstract: An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

Abstract: A method for joining a first component to a second component includes providing a first component with a first joining part receiving section and creating a joining part on and/or in the first joining part receiving section via a generative method. The method also includes providing a second component with a second joining part receiving section, and joining the joining part to the second joining part receiving section of the second component.

Abstract: Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is configured to adjust a capacitive value based on a temperature of the deflectable membrane.

Abstract: An acoustic wave sensor may include: a continuous membrane deflectable by acoustic waves to be detected, and a piezoelectric layer provided on the membrane and including a plurality of piezoelectric layer portions respectively equipped with at least two individual electric contact structures configured to electrically connect the respective piezoelectric layer portions. Electric contact structures associated with different piezoelectric layer portions may be separated from each other.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.

Abstract: A sensor element (1) includes a substrate (2) and a strain-sensitive element (3) which is preferably applied to the substrate by means of thin-film technology and is used for measuring the deformation of the substrate (2) when pressure is applied or a force is introduced, the strain-sensitive element (3) including XAlOyN1-y, wherein X is a metal with a high melting temperature in the range of greater than 1400° C. and 0<y<0.4 applies. A passivation layer (5) can be applied to the strain-sensitive element (3).

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Abstract: Cells having cavities and the manufacture and use of the same are described. An example cell includes a first layer including a gap to at least partially define a cavity and a reservoir area to receive material to enter the cavity by diffusion. Additionally, the cell includes one or more other layers coupled to the first layer to at least partially define the cavity and to hermetically seal the cavity from an exterior environment.

Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Abstract: A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.

Abstract: A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.

Abstract: A sensor element (1) includes a substrate (2) and a strain-sensitive element (3) which is preferably applied to the substrate by means of thin-film technology and is used for measuring the deformation of the substrate (2) when pressure is applied or a force is introduced, the strain-sensitive element (3) including XAlOyN1-ywherein X is a metal with a high melting temperature in the range of greater than 1400° C. and 0 <y <0.4 applies. A passivation layer (5) can be applied to the strain-sensitive element (3).