Abstract: An apparatus for wavefront detection includes a wavefront source for the production of a wavefront, an optical system transforming the wavefront, a diffraction grating through which the transformed wavefront passes, and a spatially resolving detector following the diffraction grating. The wavefront source has a two-dimensional structure.

Abstract: 1. Method for patterning a substrate using multiple exposure. 2.1. The invention relates to a method for patterning a substrate using exposure processes of an adjustable optical system, a multiple exposure being used for producing a structure image on the substrate. 2.2. According to the invention, for at least one of the plurality of exposures, the imaging quality of the optical system is determined by means of a respective measurement step and at least one parameter of the optical system that influences the imaging quality is set depending on this. 2.3. Use e.g. for the patterning of semiconductor wafers in microlithography projection exposure apparatuses.

Abstract: A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: An object pattern is imaged by an imaging system onto the image plane of the imaging system at a location where a reference pattern suited to the object pattern is situated in order to measure the imaging fidelity of an optical imaging system, for example, an eyeglass lens, a photographic lens, or a projection lens, for use in the visible spectral range. The resultant, two-dimensional, superposition pattern is detected in a spatially resolved manner in order to determine imaging parameters therefrom. The object pattern is generated with the aid of at least one electronically controllable pattern generator that serves as a self-luminous, electronically configurable, incoherent light source and may, for example, have a color monitor. The measuring system allows rapidly, flexibly, checking optical imaging systems with minimal time and effort spent on the mechanical setup required.

Abstract: A device, a microlithography projection exposure system, and a method for the determination of imaging errors of an optical imaging system using a radiation-superposition measuring technique which operates with lateral phase offset, having an optical element arranged on the object side of the imaging system, having a first periodic structure on the object side with a predetermined periodicity direction, an optical element arranged on the image side of the imaging system, having a second periodic structure on the image side with a periodicity direction corresponding to the first periodic structure, and a detector to detect the superposition pattern of an image of the first periodic structure with the second periodic structure.

Abstract: A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.

Abstract: A method of producing an optical imaging system having a plurality of optical elements after the imaging system is initially assembled and adjusted. During a subsequent measurement of the imaging system, the wavefront errors in the exit pupil, or an area conjugate therewith, belonging to the imaging system are determined in a spatially resolving manner. The optical element which has the correction surface is held in a separate mount and, following the measurement, is removed together with the mount. On the basis of the measurement, a topography and/or refractive index distribution of the correction surface which is required to compensate for the wavefront errors determined during the measurement is calculated. Following subsequent coating of the correction surface in the mount, the processed optical element is installed again in its installed position in the imaging system.

Abstract: A device for polarization-specific examination of an optical system having a detector part that has polarization detector means for recording the exit state of polarization of radiation emerging from the optical system. Also, an associated optical imaging system, and a calibration method for the device. The device includes a polarization detector with a polarizing grating structure. Provided as an alternative is a device for snapshot polarimetry having a birefringent element and downstream polarizer element that adequately polarizes nonquasi-parallel radiation. The device may be used for determining the influence on the state of polarization of UV radiation by a microlithographic projection objective.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (?1) and a second wavelength (?2), wherein a first ratio is defined as an intensity of light ?2 to an intensity of light ?1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least ?1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of ?2 to an intensity of light of ?1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: A measuring device for interferometric measurement of an optical imaging system that is provided for projecting a useful pattern, provided on a mask, into the image plane of the imaging system, includes a wavefront source for generating at least one wavefront traversing the imaging system; a diffraction grating, arrangeable downstream of the imaging system, for interacting with the wavefront reshaped by the imaging system; and a spatially resolving detector, assigned to the diffraction grating, for acquiring interferometric information. The wavefront source has at least one measuring pattern that is formed on the mask in addition to the useful pattern. The useful pattern may represent the structure of a layer of a semiconductor component in a specific fabrication step. The measuring pattern may be formed as a coherence-forming structure periodic in one or two dimensions.

Abstract: A measuring device for interferometric measurement of an optical imaging system that is provided for projecting a useful pattern, provided on a mask, into the image plane of the imaging system, includes a wavefront source for generating at least one wavefront traversing the imaging system; a diffraction grating, arrangeable downstream of the imaging system, for interacting with the wavefront reshaped by the imaging system; and a spatially resolving detector, assigned to the diffraction grating, for acquiring interferometric information. The wavefront source has at least one measuring pattern that is formed on the mask in addition to the useful pattern. The useful pattern may represent the structure of a layer of a semiconductor component in a specific fabrication step. The measuring pattern may be formed as a coherence-forming structure periodic in one or two dimensions.

Abstract: An object pattern is imaged by an imaging system onto the image plane of the imaging system at a location where a reference pattern suited to the object pattern is situated in order to measure the imaging fidelity of an optical imaging system, for example, an eyeglass lens, a photographic lens, or a projection lens, for use in the visible spectral range. The resultant, two-dimensional, superposition pattern is detected in a spatially resolved manner in order to determine imaging parameters therefrom. The object pattern is generated with the aid of at least one electronically controllable pattern generator that serves as a self-luminous, electronically configurable, incoherent light source and may, for example, have a color monitor. The measuring system allows rapidly, flexibly, checking optical imaging systems with minimal time and effort spent on the mechanical setup required.

Abstract: A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (?1) and a second wavelength (?2), wherein a first ratio is defined as an intensity of light ?2 to an intensity of light ?1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least ?1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of ?2 to an intensity of light of ?1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.

Abstract: Apparatus and method for measuring an optical imaging system, and detector unit. The measuring apparatus contains an arrangement for combining wavefront and distortion measurements. For this purpose, respectively associated interferometry and Moiré structures can be introduced on the object side and image side. The detector unit contains a fiber plate and/or a flexible image conductor with a curved entry surface or with at least two different entry surfaces, which are offset axially or inclined spatially with respect to each other, or with an axially movable entry surface. By way of suitable wavefront acquisition in various lateral positions of object and/or image structure, a topographic calibration of the object or image structure can be carried out.

Abstract: An object pattern is imaged by an imaging system onto the image plane of the imaging system at a location where a reference pattern suited to the object pattern is situated in order to measure the imaging fidelity of an optical imaging system, for example, an eyeglass lens, a photographic lens, or a projection lens, for use in the visible spectral range. The resultant, two-dimensional, superposition pattern is detected in a spatially resolved manner in order to determine imaging parameters therefrom. The object pattern is generated with the aid of at least one electronically controllable pattern generator that serves as a self-luminous, electronically configurable, incoherent light source and may, for example, have a color monitor. The measuring system allows rapidly, flexibly, checking optical imaging systems with minimal time and effort spent on the mechanical setup required.

Abstract: A method of manufacturing a miniaturized device comprises disposing a patterning structure to be imaged in a region of an object plane of an imaging optics of the projection exposure system; disposing a substrate carrying a resist in a region of an image plane of the imaging optics and exposing portions of the substrate with images of the patterning structure using the projection exposure system; maintaining a flow of an immersion liquid to and from a space between the substrate and a front lens of the imaging optics closest to the substrate; measuring a physical property which is indicative of at least one of a refractive index of the immersion liquid and a change of the refractive index of the immersion liquid over time, wherein the physical property is measured using a beam of measuring light interacting with the immersion liquid; adjusting at least one optical property of the projection exposure system based on the measured physical property; exposing further portions of the substrate with images of the p

Abstract: Method and apparatus for setting optical imaging properties using radiation treatment, specifically a method and an apparatus for setting the imaging properties of an optical system with radiation treatment of at least one optical element of the optical system in the installed state, and a method for setting the imaging properties of an internal optical element with radiation treatment. A measurement is carried out on the optical system in order to determine one or more aberrations in a spatially resolved fashion, a correction that changes the shape and/or refractive index of the internal optical element is calculated in order to reduce the measured aberration or aberrations, and the optical element is irradiated with the aid of a processing radiation that changes the shape and/or refractive index, in accordance with the calculated correction.