Abstract: A measuring apparatus for optical, for example interferometric, measurement of an optical imaging system, imaging of a useful pattern in an imaging operation, including a device for production of radiation information, for example interference information, which is indicative of imaging errors, having a mask structure arrangement which contains a measurement pattern, and a device for detection and evaluation of the interference information which is indicative of imaging errors; also a method for operation of the optical imaging system including imaging error correction.

Abstract: In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.

Abstract: In the case of a method and a measuring system for measuring the distortion of an optical imaging system with the aid of moiré patterns, an object grating with an object pattern is arranged in the object plane of the imaging system, and an image grating with an image pattern is arranged in the image plane of the imaging system. Both the object pattern and the image pattern in each case have a multiplicity of cells with sub-gratings of different grating properties, it being possible, in particular, for the sub-gratings to have different directions of periodicity and different phase angles.

Abstract: An apparatus having a wavefront measuring device (1, 2, 7), which is designed to determine a wavefront tilt in one or more non-parallel transverse directions perpendicular to an optical axis of the optical imaging system, at a plurality of measurement points which are mutually offset in the direction of the optical axis. An evaluation unit (5) determines a telecentricity error value from the wavefront tilt measurement values obtained by the wavefront measuring device.

Abstract: In a measuring method for measuring the imaging quality of an optical imaging system (10), a measuring mask is provided, which has a mask structure (20), which can be arranged in the region of an object surface of the imaging system. Furthermore, provision is made of a reference structure (23) adapted to the mask structure, which reference structure is to be arranged in the image surface (12) of the imaging system, and a two-dimensionally extended, radiation-sensitive recording medium (24), which is arranged in a recording position in such a way that a superimposition pattern that arises when the mask structure is imaged onto the reference structure can be detected by the recording medium. For the evaluation of the recording medium, the recording medium is brought from the recording position into an evaluation position remote therefrom.

Abstract: A measuring device for interferometric measurement of an optical imaging system that is provided for projecting a useful pattern, provided on a mask, into the image plane of the imaging system, includes a wavefront source for generating at least one wavefront traversing the imaging system; a diffraction grating, arrangeable downstream of the imaging system, for interacting with the wavefront reshaped by the imaging system; and a spatially resolving detector, assigned to the diffraction grating, for acquiring interferometric information. The wavefront source has at least one measuring pattern that is formed on the mask in addition to the useful pattern. The useful pattern may represent the structure of a layer of a semiconductor component in a specific fabrication step. The measuring pattern may be formed as a coherence-forming structure periodic in one or two dimensions.

Abstract: A device and a method for the optical measurement of an optical system (1), in particular an optical imaging system. The device includes one or more object-side test optics components (2a, 2b) arranged in front of the optical system to be measured, and/or one or more image-side test optics components (3, 4, 5) arranged behind the optical system to be measured. A container for use in such a device, a microlithography projection exposure machine equipped with such a device, and a method which can be carried out with the aid of this device are also disclosed. An immersion fluid is introduced adjacent to at least one of the one or more object-side test optics components and/or image-side test optics components. Such device and method provide for optical measurement by microlithography projection objectives of high numerical aperture using wavefront detection with shearing or point diffraction interferometry or a Moiré measuring technique.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system comprises an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method comprises setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: A device, a microlithography projection exposure system, and a method for the determination of imaging errors of an optical imaging system using a radiation-superposition measuring technique which operates with lateral phase offset, having an optical element arranged on the object side of the imaging system, having a first periodic structure on the object side with a predetermined periodicity direction, an optical element arranged on the image side of the imaging system, having a second periodic structure on the image side with a periodicity direction corresponding to the first periodic structure, and a detector to detect the superposition pattern of an image of the first periodic structure with the second periodic structure.

Abstract: The invention relates to a device for polarization-specific examination of an optical system having a detector part that has polarization detector means for recording the exit state of polarization of radiation (6) emerging from the optical system, to an associated optical imaging system, and to a calibration method for the device. A device according to the invention includes polarization detector means with a polarizing grating structure (4). Provided as an alternative is a device for snapshot polarimetry having a birefringent element and downstream polarizer element that is suitable, also adequately polarizing nonquasi-parallel radiation. Use, for example, for determining the influencing of the state of polarization of UV radiation by a microlithographic projection objective.

Abstract: In the case of a method and a measuring system for measuring the distortion of an optical imaging system with the aid of moiré patterns, an object grating with an object pattern is arranged in the object plane of the imaging system, and an image grating with an image pattern is arranged in the image plane of the imaging system. Both the object pattern and the image pattern in each case have a multiplicity of cells with sub-gratings of different grating properties, it being possible, in particular, for the sub-gratings to have different directions of periodicity and different phase angles.

Abstract: Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns.

Abstract: An illuminating system having a diffuser element (2) that is introduced into an illuminating beam path (1) and is arranged movably, in particular for oscillatory movement. Such system has applicability, for example, in microlithography projection exposure machines and associated wavefront measurement interferometers.

Abstract: In a method of producing an optical imaging system, for example a projection objective for microlithography, which has a plurality of optical elements, the imaging system is initially assembled and adjusted. In the process, at least one optical surface located in the vicinity of a pupil surface of the imaging system remains uncoated. During a subsequent measurement of the imaging system, for example using shearing interferometry, the wavefront errors in the exit pupil or an area conjugate therewith belonging to the imaging system are determined in a specially resolving manner. The optical element which has the correction surface is held in a separate mount and, following the measurement, is removed together with the mount. On the basis of the measurement, a topography and/or refractive index distribution of the correction surface which is required to compensate for the wavefront errors determined during the measurement is calculated.

Abstract: A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.

Abstract: An object pattern is imaged by an imaging system onto the image plane of the imaging system at a location where a reference pattern suited to the object pattern is situated in order to measure the imaging fidelity of an optical imaging system, for example, an eyeglass lens, a photographic lens, or a projection lens, for use in the visible spectral range. The resultant, two-dimensional, superposition pattern is detected in a spatially resolved manner in order to determine imaging parameters therefrom. The object pattern is generated with the aid of at least one electronically controllable pattern generator that serves as a self-luminous, electronically configurable, incoherent light source and may, for example, have a color monitor. The measuring system allows rapidly, flexibly, checking optical imaging systems with minimal time and effort spent on the mechanical setup required.

Abstract: An apparatus for wavefront detection includes a wavefront source for the production of a wavefront, an optical system transforming the wavefront, a diffraction grating through which the transformed wavefront passes, and a spatially resolving detector following the diffraction grating. The wavefront source has a two-dimensional structure.