Abstract: A Vertical Cavity Surface Emitting Laser VCSEL, includes an optical resonator with a first reflector, a second reflector, and an active region for laser emission arranged between the first reflector and the second reflector and remaining regions outside of the active region, and an electrical contact arrangement configured to provide an electrical drive current to electrically pump the optical resonator. The optical resonator further comprises a loss layer introducing optical and/or electrical losses to increase wavelength shift of the laser emission when varying the drive current. If the loss layer is an optical loss layer, the optical losses introduced by the loss layer are higher than the sum of the optical losses in the remaining regions. If the loss layer is an electrical loss layer, the electrical losses introduced by the loss layer are higher by a factor of at least 5 than the electrical losses in the remaining regions.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) has a mesa having an active region, which has m active layer structures (with m?2). The active layer structures are electrically connected to each other by a tunnel junction therebetween. The mesa has an optical resonator, which has first and second DBRs. The active region is between the first and second DBRs. The VCSEL has first and second electrical contacts, which provide electrical current to the active region, and an electrical control contact, which controls gain-switched laser emission of the VCSEL by at least 1 up to m?1 active layer structures by a current between the electrical control contact and the first or second electrical contact. A current aperture is between the active region and the first or second electrode. A distance between the current aperture and a furthest active layer structure is at least three times the laser light's wavelength.

Abstract: A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0?x<1. The light absorption region has an InyGa1-yAs layer, where 0<y<1, and y>x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a layer stack of semiconductor layers having a first layer sub-stack forming a mesa, and a second layer sub-stack adjacent to the mesa in a stacking direction. Layers of the second layer sub-stack extend beyond layers of the first sub-stack in a direction perpendicular to the stacking direction. The semiconductor layers of the layer stack form an optical resonator having a first mirror, a second mirror, an active region between the first and second mirrors for laser light generation, and an oxide aperture layer forming a current aperture. The oxide aperture layer is made from Al1-xGaxAs with 0?x?0.05. The oxide aperture layer is a last layer of the mesa and immediately adjacent to a first layer of the second layer sub-stack. A first layer of the second layer sub-stack is a contact layer.

Abstract: A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k?1)?/(4 m). Where ? is the wavelength of the laser light in the absorption region, and k and m are natural numbers?1.

Abstract: VCSELs have a substrate, first and second electrical contacts (ECs), and an optical resonator (OR), having first and second distributed Bragg reflectors (DBRs) and an active layer between the DBRs. The first DBR is between the substrate and the active layer. One of the DBRs has: first and second parts, having different conductivity types, and each with a pair of layers with different refractive indices. A tunnel junction (TJ) is between the parts. The ECs are for electrically pumping the OR such that the TJ is reversely biased during operation of the VCSEL. Either the first DBR includes the parts, having a relative thickness of the second part to a total thickness of the first and second parts between 0.1-0.8, or the second DBR has the parts, the second part being on the TJ facing away from the active layer, and the relative thickness being between 0.15-0.6.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) has a mesa having an active region, which has m active layer structures (with m?2). The active layer structures are electrically connected to each other by a tunnel junction therebetween. The mesa has an optical resonator, which has first and second DBRs. The active region is between the first and second DBRs. The VCSEL has first and second electrical contacts, which provide electrical current to the active region, and an electrical control contact, which controls gain-switched laser emission of the VCSEL by at least 1 up to m-1 active layer structures by a current between the electrical control contact and the first or second electrical contact. A current aperture is between the active region and the first or second electrode. A distance between the current aperture and a furthest active layer structure is at least three times the laser light's wavelength.

Abstract: A method for determining operating conditions of a particle detector that includes a multimode Vertical Cavity Surface Emitting Laser (VCSEL) includes providing an electrical drive current to the multimode VCSEL such that a laser beam is emitted by the multimode VCSEL and varying the electrical drive current within a predefined range of electrical drive currents. The method further includes determining, as a function of the electrical drive current, an intensity signal of an optical wave within a laser cavity of the multimode VCSEL, determining, as a function of the electrical drive current, a noise measure of the intensity signal, determining a range of electrical drive currents for which the noise measure is below a predefined threshold noise measure value, and determining operating conditions of the particle detector by choosing an electrical drive current for particle detection out of the determined low noise range of electrical drive currents.

Abstract: A method for determining operating conditions of a particle detector that includes a multimode Vertical Cavity Surface Emitting Laser (VCSEL) includes providing an electrical drive current to the multimode VCSEL such that a laser beam is emitted by the multimode VCSEL and varying the electrical drive current within a predefined range of electrical drive currents. The method further includes determining, as a function of the electrical drive current, an intensity signal of an optical wave within a laser cavity of the multimode VCSEL, determining, as a function of the electrical drive current, a noise measure of the intensity signal, determining a range of electrical drive currents for which the noise measure is below a predefined threshold noise measure value, and determining operating conditions of the particle detector by choosing an electrical drive current for particle detection out of the determined low noise range of electrical drive currents.

Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).

Abstract: The invention describes a laser device (10) comprising an array (50) of laser emitters (100) and a control unit (200), the array (50) comprises at least a first sub array (110) of laser emitters and a second sub array (120) of laser emitters, wherein the first sub array (110) emits laser light of a first polarization and the second sub array (120) emits laser light of a second polarization being different from the first polarization, and wherein the control unit (200) is adapted to control the first sub array (110) and the second sub array (120) such that the polarization of the laser light emitted by the array (50) can be changed. The invention further describes a sensor device (300) and an optical detection system (400) comprising such a laser device (10). Furthermore, a method of determining the shape of an object by means of the optical detection system (400) is described.

Abstract: A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21?, 21?) and a second minor surface (22, 22?, 22?) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21?, 22?, 21?, 22?) along the production line and a radiation device (30) comprising a number of lasers for generating light (L).

Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).

Abstract: The invention describes a laser device (10) comprising an array (50) of laser emitters (100) and a control unit (200), the array (50) comprises at least a first sub array (110) of laser emitters and a second sub array (120) of laser emitters, wherein the first sub array (110) emits laser light of a first polarization and the second sub array (120) emits laser light of a second polarization being different from the first polarization, and wherein the control unit (200) is adapted to control the first sub array (110) and the second sub array (120) such that the polarization of the laser light emitted by the array (50) can be changed. The invention further describes a sensor device (300) and an optical detection system (400) comprising such a laser device (10). Furthermore, a method of determining the shape of an object by means of the optical detection system (400) is described.

Abstract: A solid-state light source includes laser diodes that emit a laser beam with a first wavelength, a rotatable support that is arranged in a beam path of the laser beam and a reflector that is arranged between the laser diodes and the rotatable support. The rotatable support is formed of a ring or of an optically transparent disc. Further, the rotatable support is mounted to be rotatable around a rotation axis such that the laser beam impinges on a ring-shaped area of the rotatable support during rotation. Segments of the ring-shaped area include wavelength converting material that emits radiation of a second wavelength upon impingement of the laser beam. The rotatable support is mounted in a bearing that is arranged distant from the rotation axis to allow unhindered passage of the radiation directed by the reflector to the emission direction.

Abstract: The invention describes a heating system (13) for heating a body (1) of a preform having a material thickness bounded by a first surface (2) and a second surface (4). The heating system (13) comprises at least a light source arrangement (12) which is arranged to emit a number of directed light beams (17) and a coupling arrangement (15, 21) realized to deliberately couple light from the light source arrangement (12) in a specific direction into the body (1) during at least a certain minimum period such that the light is essentially guided along a longer path (19) between the first (2) and second surface (4). Furthermore, the invention concerns a method of heating a body (1) of a preform.

Abstract: The present invention relates to a solid-state light source comprising one or several laser diodes (1) emitting a laser beam with a first wavelength, a rotatable support (6) arranged in a beam path of the laser beam and a reflector (4) arranged between the laser diodes (1) and the rotatable support (6). The rotatable support (6) is formed of a ring or of an optically transparent disc mounted to be rotatable around a rotation axis (9) such that the laser beam impinges on a ring-shaped area (7) of the rotatable support (6) during rotation. One or several segments of the ring-shaped area (7) comprise at least one wavelength converting material (8) emitting radiation of a second wavelength upon impingement of the laser beam. The reflector (4) allows the passage of the laser beam through a central portion of the reflector (4), collects the radiation emitted from a location of impingement of the laser beam on the ring-shaped area (7) and directs the collected radiation to an emission direction.

Abstract: A method 200 of manufacturing a (part of) color ring is provided. The color ring converts a color of light emitted by a light emitter into at least one other color. The method (200) comprising the steps of: i) pressing (102) a first ring body of a first granulated precursor comprising a first luminescent material for converting the color of the light of the light emitter into a first one of the at least one other color, and ii) sintering (104) the first ring body for obtaining a first ceramic ring. The color ring comprises at least a segment of the first ceramic ring.

Abstract: The invention relates to the field of laser sources (3), and for specifically to inhibiting damage due to misuse of a laser source (3), in particular of a high-power laser source (3) provided in a consumer product (1). The proposed device (1) includes at least a laser source (3) and a safety unit (2), wherein by means of the arrangement of the safety unit (2) it is provided that potential harm caused by misuse of the laser source (3) based on an unauthorized access to the laser source (3) is confined or even prevented by reducing the power level of the output of the laser source (3) or by even completely stopping any laser output therefrom. A corresponding method of providing a laser source (3) and a further method of preventing misuse of a laser source (3) are also proposed.

Abstract: The invention relates to a laser (1) for emitting laser light in the visible spectral range. A rare earth doped anisotropic crystal (2) comprising a 5d-4f transition is arranged within a laser resonator (7, 8), and a pumping light source (3) pumps the crystal (2) for generating laser light in the visible spectral range by using the 5d-4f transition. The 5d-4f transition of the rare earth doped anisotropic crystal comprises an absorption band extending over several nm. Thus, pump light having a wavelength within a relatively broad wavelength range can be used. This reduces the requirements with respect to the wavelength accuracy of the pumping light source and, thus, more pumping light sources of an amount of produced pumping light sources can be used for assembling the laser, thereby reducing the amount of rejects.