Abstract: The present invention relates to a solid-state laser system constituted bya solid-state laser whichis optically pumped by a vertical extended cavity surface emitting laser (VECSEL). The solid-state laser comprises a solid-state laser medium (11) arranged in a laser cavity which consists oftwo resonator cavitymirrors (10, 12), a first of saidcavity mirrors (12) being designed as an outcoupling mirror of saidsolid-state 5 laser and a second of saidcavity mirrors (10) being formed to allow optical pumping of saidsolid-state laser medium (11) through saidsecond cavity mirror (10). In the proposed solid-state laser system, the extended cavity mirror (7) of the VECSEL is constituted byone of the resonator cavity mirrors (10, 12) of the solid-state-laser. The proposed laser system provides an improved conversion efficiency and a highly 10 integrated design.

Abstract: The present invention relates to an extended cavity semiconductor laser device comprising an array of at least two semiconductor gain elements (20, 21), each of said semiconductor gain elements (20, 21) comprising a layer structure (1) forming a first end mirror (2) and an active medium (3). A coupling component (22) inside of the device combines fundamental laser radiation emitted by said array of semiconductor gain elements (20, 21) to a single combined laser beam (25). A second end mirror (23) reflects at least part of said single combined laser beam (23) back to said coupling component (22) to form extended cavities with the first end mirrors (2). Due to this coherent coupling of several extended cavity semiconductor lasers a single beam of the fundamental radiation is generated with increased intensity, good beam profile and narrow spectral band width.

Abstract: A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21?, 21?) and a second minor surface (22, 22?, 22?) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21?, 22?, 21?, 22?) along the production line and a radiation device (30) comprising a number of lasers for generating light (L).

Abstract: The present invention relates to a solid state laser device with a solid state gain medium between two resonator end mirrors (3, 5) and a GaN-based pump laser (1) arranged to optically pump the solid state gain medium. The solid state gain medium is a Pr3+-doped crystalline or polycrystalline host material (4) which has a cubic crystalline structure and highest phonon energies of ?600 cm and provides a band gap of ?5.5 eV. The proposed solid state laser can be designed to emit at several visible wavelengths with the emitted power showing a reduced dependence on the temperature of the GaN-based pump laser (1).

Abstract: The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure (4) arranged between a first mirror (5) and a second mirror (6), said first (5) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser. The upconversion laser system of the present invention is characterized in that the upconversion laser is arranged in the laser cavity (7) of the semiconductor laser. The proposed upconversion laser system has a compact design.

Abstract: A method and a circuit arrangement for the operation of a discharge lamp, in particular of a high-pressure gas mercury discharge lamp (HID[high intensity discharge]) lamp or a UHP [ultra high performance] lamp, are described, which are used to improve the color rendering index of the light. This is essentially achieved by feeding the lamp current on which current pulses with a suitably adjusted amplitude Ip and/or duration ?p and/or repetition rate f are superimposed.

Abstract: The present invention relates to a laser projection system consisting of at least one first laser light source (1), a projection screen (7) and a spatial light modulator (6) for projecting a laser beam of said laser light source (1) to form an image on said projection screen (7). The projection screen (7) comprises a luminescent layer (9) which upon excitation by said laser beam emits blue light. To this end, the luminescent layer (9) contains MSi6-aAlaN8-aOx+a:Eu2+ (with M=Sr, Ba, Ca; 0?x?1; 0?a?1) as a luminescent material. With this material laser light of a laser diode emitting in the wavelength region of 405 nm can be converted to blue light of 450 nm with high efficiency. The proposed projection system, therefore, is suitable for RGB projection using laser diodes as laser light sources.

Abstract: The present invention relates to an all-solid state UV laser system comprising at least one semiconductor laser (10) in a VECSEL configuration. The gain structure (3) in this semiconductor laser (10) emits fundamental radiation in a wavelength range which can be frequency doubled to wavelengths in the UV region. The frequency doubling is achieved with a nonlinear optical crystal (6) for second harmonic generation arranged inside the extended cavity of the semiconductor laser (10). By electrically pumping of the semiconductor laser wavelengths below 200 nm can be efficiently generated with already known semiconductor materials like GaN. The proposed UV laser system is compact and can be fabricated and operated at low costs compared to UV excimer lasers.