Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (tInGaN) and indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm2/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Abstract: An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.

Abstract: Trenched vertical power field-effect transistors with improved on-resistance and/or breakdown voltage are fabricated. In one or more embodiments, the modulation of the current flow of the transistor occurs in the lateral channel, whereas the voltage is predominantly held in the vertical direction in the off-state. When the device is in the on-state, the current is channeled through an aperture in a current-blocking region after it flows under a gate region into the drift region. In another embodiment, a novel vertical power low-loss semiconductor multi-junction device in III-nitride and non-III-nitride material system is provided. One or more multi-junction device embodiments aim at providing enhancement mode (normally-off) operation alongside ultra-low on resistance and high breakdown voltage.

Abstract: Generating and using a device-type specific preferred public land mobile network (PLMN) list for roaming PLMN selection. Wireless devices sharing one or more common characteristics may be tasked with collecting roaming PLMN selection data. That data may be collected and used to generate a preferred PLMN list specific to wireless devices sharing those common characteristics. The preferred PLMN list may be distributed to wireless devices sharing those common characteristics, which may then use it in conjunction with roaming PLMN selection.

Abstract: Described herein are apparatus, systems and methods for opportunistic system selection and reselection to avoid jammer desense intermodulation distortion. A method may comprise, at a user equipment (“UE”), identifying a list of frequencies and bands available to a cellular modem of the UE for one of system selection and system reselection, identifying a subset of the list of frequencies and bands based on an operation of a non-cellular wireless communication component of the UE, storing the subset of the list of frequencies and bands in a graylist, and performing, by the cellular modem, a search for one of the system selection and the system reselection based on the graylist.

Abstract: Methods and apparatus for reducing voice call drop rate are disclosed. Existing devices do not account for the added burden of background services on voice calls. Specifically, multi-RAB scenarios (e.g., a voice call and background services) can experience significant reduction in call quality. Accordingly, in one exemplary embodiment, background services that are not time-critical and/or application-critical can be suspended while a voice call is in progress. By suspending background traffic during a call, the device can avoid unnecessary multi-RAB voice call operation, which significantly improves overall network operation and user experience.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A method of treating TDP-43 proteinopathies such as Alzheimer's disease, amyotrophic lateral sclerosis, and fronto-temporal lobar dementia is presented herein. It was found that administering hexachlorophene to cells expressing endogenous TDP-43 or overexpressing wild-type TDP-43 reduced accumulation of TDP-43 in the cells.

Abstract: A footwear insole system for use with an article of footwear including a base insole component and an upper insole component. The base insole includes a chassis and first and a second shock absorbing inserts. The upper insole includes a spacer panel, first and a second gel insert members, and a fabric sheet layer. The insole system may be permanently secured to an article of footwear or the insole system may be replaceable or interchangeable for installation and removal to and from an article of footwear by a user.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: Apparatuses, systems, and methods for user equipment (UE) devices to more efficiently scan frequency bands for potential base stations may include a UE configured to store information regarding results of prior cellular scan operations for a cell and to perform a new cellular scan operation while camped in the first cell. The new cellular scan operation may be partially based on the stored information. The prior cellular scan operations may have been performed to identify frequencies of available cellular base stations. The UE may update the information regarding results of prior cellular scan operations with information regarding success or failure of the new cellular scan operation. The UE may maintain lists of cells for which a cellular scan has been successful or unsuccessful and adjust the new cellular scan operation based at least partially on contents of at least one of these lists.

Abstract: Described herein are apparatus, systems and methods for opportunistic system selection and reselection to avoid jammer desense intermodulation distortion. A method may comprise, at a user equipment (“UE”), identifying a list of frequencies and bands available to a cellular modem of the UE for one of system selection and system reselection, identifying a subset of the list of frequencies and bands based on an operation of a non-cellular wireless communication component of the UE, storing the subset of the list of frequencies and bands in a graylist, and performing, by the cellular modem, a search for one of the system selection and the system reselection based on the graylist.

Abstract: A method of treating a disease associated with mutation of LRRK2 protein is presented herein. It was found that administering hexachlorophene to cells expressing endogenous LRRK2 or overexpressing wild-type or mutant LRRK2 reduced the total LRRK2 level in the cells.

Abstract: Generating and using a device-type specific preferred public land mobile network (PLMN) list for roaming PLMN selection. Wireless devices sharing one or more common characteristics may be tasked with collecting roaming PLMN selection data. That data may be collected and used to generate a preferred PLMN list specific to wireless devices sharing those common characteristics. The preferred PLMN list may be distributed to wireless devices sharing those common characteristics, which may then use it in conjunction with roaming PLMN selection.

Abstract: Apparatuses, systems, and methods for user equipment (UE) devices to more efficiently scan frequency bands for potential base stations may include a UE configured maintain a first list of cells for which a cellular scan has been successful and a second list of cells for which a cellular scan has not been successful. The UE may be configured perform a first cellular while camped on a first cell at an expiration of a scan timer and, if the cellular scan is not successful, the increment a first failure count variable associated with the first cell and add the first cell to the second list if the first cell is not present on the first or second list. Additionally, if the first cellular scan is successful, the UE may be configured to add the first cell to the first list if the first cell is not present on the first list.

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

Abstract: Generating and using a device-type specific preferred public land mobile network (PLMN) list for roaming PLMN selection. Wireless devices sharing one or more common characteristics may be tasked with collecting roaming PLMN selection data. That data may be collected and used to generate a preferred PLMN list specific to wireless devices sharing those common characteristics. The preferred PLMN list may be distributed to wireless devices sharing those common characteristics, which may then use it in conjunction with roaming PLMN selection.

Abstract: Trenched vertical power field-effect transistors with improved on-resistance and/or breakdown voltage are fabricated. In one or more embodiments, the modulation of the current flow of the transistor occurs in the lateral channel, whereas the voltage is predominantly held in the vertical direction in the off-state. When the device is in the on-state, the current is channeled through an aperture in a current-blocking region after it flows under a gate region into the drift region. In another embodiment, a novel vertical power low-loss semiconductor multi-junction device in III-nitride and non-III-nitride material system is provided. One or more multi-junction device embodiments aim at providing enhancement mode (normally-off) operation alongside ultra-low on resistance and high breakdown voltage.

Abstract: Various arrangements for organizing virtual objects within an augmented reality display are presented. A display may be provided and configured to present a virtual field-of-view having multiple virtual objects superimposed on a real-world scene. Priorities may be assigned to multiple regions of the virtual field-of-view based on real-world objects present within the real-world scene. A priority of a region of the multiple regions may be based on one or more real-world objects identified in the region. The multiple virtual objects may be displayed within the virtual field-of-view arranged based on the prioritized multiple regions.