Patents by Inventor Un-jeong Kim

Un-jeong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210244321
    Abstract: An apparatus for estimating a glucose exposure may include: a spectrometer configured to measure a plurality of Raman spectra from an object; and a processor configured to extract depth-specific protein information from the plurality of Raman spectra and estimate the glucose exposure of the object based on the depth-specific protein information.
    Type: Application
    Filed: April 28, 2021
    Publication date: August 12, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Young PARK, Un Jeong KIM, Yun S PARK, Sung Mo AHN
  • Patent number: 11020027
    Abstract: An apparatus for estimating a glucose exposure may include: a spectrometer configured to measure a plurality of Raman spectra from an object; and a processor configured to extract depth-specific protein information from the plurality of Raman spectra and estimate the glucose exposure of the object based on the depth-specific protein information.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: June 1, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Young Park, Un Jeong Kim, Yun S Park, Sung Mo Ahn
  • Publication number: 20190083013
    Abstract: An apparatus for estimating a glucose exposure may include: a spectrometer configured to measure a plurality of Raman spectra from an object; and a processor configured to extract depth-specific protein information from the plurality of Raman spectra and estimate the glucose exposure of the object based on the depth-specific protein information.
    Type: Application
    Filed: September 17, 2018
    Publication date: March 21, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Young PARK, Un Jeong KIM, Yun S PARK, Sung Mo AHN
  • Patent number: 9991371
    Abstract: A semiconductor device includes a substrate, a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer, the second region of the 2D material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: June 5, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Un Jeong Kim, Hyo Chul Kim, Young Geun Roh, Yeon Sang Park, Jae Gwan Chung, Si Young Lee, Young Hee Lee
  • Patent number: 9881785
    Abstract: A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: January 30, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-geun Roh, Un-jeong Kim, Chang-won Lee
  • Patent number: 9748094
    Abstract: A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: August 29, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun-hee Choi, Un-jeong Kim, Sang-jin Lee
  • Publication number: 20170110564
    Abstract: A semiconductor device includes a substrate, a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer, the second region of the 2D material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.
    Type: Application
    Filed: October 12, 2016
    Publication date: April 20, 2017
    Applicants: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Un Jeong KIM, Hyo Chul KIM, Young Geun ROH, Yeon Sang PARK, Jae Gwan CHUNG, Si Young LEE, Young Hee LEE
  • Patent number: 9341753
    Abstract: Provided are an optical device and a method of controlling propagation directions of light and a surface plasmon using the optical device. The optical device includes a light source, a substrate, and a metal layer that is disposed on the substrate, the metal layer includes at least two slots, and propagation directions of light and a surface plasmon may be controlled by using the light that is polarized in a direction parallel to a direction of a long length of any one of the at least two slots.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: May 17, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-eun Kim, Yeon-sang Park, Un-jeong Kim, Young-geun Roh, Chang-won Lee, Sang-mo Cheon
  • Patent number: 9279937
    Abstract: An optical interconnection for a stacked integrated circuit, is provided. The optical interconnection includes: an optical transmission unit disposed in a first layer and an optical receiving unit disposed in a second layer, different from the first layer, and spaced apart from the optical transmission unit by a predetermined gap. The optical transmission unit includes a first optical antenna that outputs light; the optical receiving unit includes a second optical antenna which receives light transmitted from the optical transmission unit. At least one of the first and second optical antennas includes a plurality of nanostructures configured to transmit or receive an optical signal.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-geun Roh, Chang-won Lee, Un-jeong Kim, Jin-eun Kim, Yeon-sang Park, Jae-soong Lee, Sang-mo Cheon
  • Patent number: 9207369
    Abstract: An optical modulator includes a dielectric layer and a metal layer arranged on the dielectric layer. In the optical modulator, a first light of a first frequency and a second light of a second frequency that are incident upon the metal layer exit from the metal layer at different refractive angles due to surface plasmon generation.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: December 8, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yeon-sang Park, Jin-eun Kim, Chang-won Lee, Un-jeong Kim, Young-geun Roh, Jae-soong Lee, Sang-mo Cheon
  • Patent number: 9029252
    Abstract: A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming a block copolymer template layer and a precursor pattern of metal coupled to the block copolymer template layer on a graphene layer, and forming a metal nanopattern on the graphene layer by removing the block copolymer template layer and reducing the precursor pattern.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: May 12, 2015
    Assignees: Samsung Electronics Co., Ltd., Unist Academy—Industry Research Corporation
    Inventors: Un-jeong Kim, Jin-eun Kim, Young-geun Roh, Soo-jin Park, Yeon-sang Park, Seung-min Yoo, Chang-won Lee, Jae-soong Lee, Sang-mo Cheon
  • Publication number: 20140376073
    Abstract: Provided are an optical device and a method of controlling propagation directions of light and a surface plasmon using the optical device. The optical device includes a light source, a substrate, and a metal layer that is disposed on the substrate, the metal layer includes at least two slots, and propagation directions of light and a surface plasmon may be controlled by using the light that is polarized in a direction parallel to a direction of a long length of any one of the at least two slots.
    Type: Application
    Filed: March 24, 2014
    Publication date: December 25, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-eun KIM, Yeon-sang PARK, Un-jeong KIM, Young-geun ROH, Chang-won LEE, Sang-mo CHEON
  • Publication number: 20140376856
    Abstract: An optical interconnection for a stacked integrated circuit, is provided. The optical interconnection includes: an optical transmission unit disposed in a first layer and an optical receiving unit disposed in a second layer, different from the first layer, and spaced apart from the optical transmission unit by a predetermined gap. The optical transmission unit includes a first optical antenna that outputs light; the optical receiving unit includes a second optical antenna which receives light transmitted from the optical transmission unit. At least one of the first and second optical antennas includes a plurality of nanostructures configured to transmit or receive an optical signal.
    Type: Application
    Filed: April 9, 2014
    Publication date: December 25, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-geun ROH, Chang-won LEE, Un-jeong KIM, Jin-eun KIM, Yeon-sang PARK, Jae-soong LEE, Sang-mo CHEON
  • Patent number: 8848756
    Abstract: A surface plasmon laser includes a metal layer, a gain medium layer provided on the metal layer and having a circular structure portion in which a whispering gallery mode is generated in which surface plasmon light generated due to surface plasmon resonance on an interface with the metal layer rotates along a circle, and a deformed portion formed to output part of laser light generated in the circular structure portion of the gain medium layer.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-soong Lee, Un-jeong Kim, Young-geun Roh, Yeon-sang Park
  • Patent number: 8823077
    Abstract: A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: September 2, 2014
    Assignees: Samsung Electronics Co., Ltd., SNU R&D Foundation
    Inventors: Eun-Hong Lee, Seung-Hun Hong, Un-jeong Kim, Hyung-Woo Lee, Sung Myung
  • Publication number: 20140233877
    Abstract: An optical modulator includes a dielectric layer and a metal layer arranged on the dielectric layer. In the optical modulator, a first light of a first frequency and a second light of a second frequency that are incident upon the metal layer exit from the metal layer at different refractive angles due to surface plasmon generation.
    Type: Application
    Filed: February 4, 2014
    Publication date: August 21, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yeon-sang PARK, Jin-eun KIM, Chang-won LEE, Un-jeong KIM, Young-geun ROH, Jae-soong LEE, Sang-mo CHEON
  • Publication number: 20140225067
    Abstract: A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming a block copolymer template layer and a precursor pattern of metal coupled to the block copolymer template layer on a graphene layer, and forming a metal nanopattern on the graphene layer by removing the block copolymer template layer and reducing the precursor pattern.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 14, 2014
    Applicants: UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Un-jeong KIM, Jin-eun KIM, Young-geun ROH, Soo-jin PARK, Yeon-sang PARK, Seung-min YOO, Chang-won LEE, Jae-soong LEE, Sang-mo CHEON
  • Patent number: 8796667
    Abstract: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: August 5, 2014
    Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Eun-hong Lee, Un-jeong Kim, Woo-jong Yu, Young-hee Lee
  • Publication number: 20140057451
    Abstract: A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.
    Type: Application
    Filed: March 4, 2013
    Publication date: February 27, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-geun ROH, Un-jeong KIM, Chang-won LEE
  • Patent number: 8507030
    Abstract: Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.
    Type: Grant
    Filed: April 16, 2008
    Date of Patent: August 13, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yo-seb Min, Eun-ju Bae, Un-jeong Kim, Eun-hong Lee