Abstract: Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.

Abstract: Provided is a method of manufacturing carbon nanotube (CNT) device arrays. In the method of manufacturing CNT device arrays, catalyst patterns may be formed using a photolithography process, CNTs may be grown from the catalyst patterns, and electrodes may be formed on the grown CNTs.

Abstract: An electroconductive fiber, a method of manufacturing an electroconductive fiber, and a fiber complex including an electroconductive fiber are provided, the electroconductive fiber includes an electroconductive polymer, an elastic polymer that forms a structure with the electroconductive polymer, and a carboneous material on at least one of the electroconductive polymer and the elastic polymer.

Abstract: An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit.

Abstract: A solid oxide electrolyte membrane including a solid oxide electrolyte layer; and an insulating layer formed as a conformal layer on a single surface or two opposite surfaces of the solid oxide electrolyte layer and including nano-grains having a average crystal grain size of 30 nm or less, a method of manufacturing the solid oxide electrolyte membrane, and a fuel cell including the solid oxide electrolyte membrane.

Abstract: A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.

Abstract: A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.

Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

Abstract: Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Abstract: A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.

Abstract: An electroconductive fiber, a method of manufacturing an electroconductive fiber, and a fiber complex including an electroconductive fiber are provided, the electroconductive fiber includes an electroconductive polymer, an elastic polymer that forms a structure with the electroconductive polymer, and a carboneous material on at least one of the electroconductive polymer and the elastic polymer.

Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

Abstract: Provided is a method of manufacturing carbon nanotube (CNT) device arrays. In the method of manufacturing CNT device arrays, catalyst patterns may be formed using a photolithography process, CNTs may be grown from the catalyst patterns, and electrodes may be formed on the grown CNTs.

Abstract: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.

Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

Abstract: Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.

Abstract: A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.

Abstract: Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.

Abstract: Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Abstract: Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.