Abstract: A semiconductor package including a package substrate, a connection substrate on the package substrate and having on a lower corner of the connection substrate a recession that faces a top surface of the package substrate, a semiconductor chip on the connection substrate, a plurality of first connection terminals connecting the connection substrate to the semiconductor chip, and a plurality of second connection terminals connecting the package substrate to the connection substrate. The recession is laterally spaced apart from the second connection terminals.

Abstract: A semiconductor package includes a base substrate, a first semiconductor chip on the base substrate, a second semiconductor chip on the first semiconductor chip, an upper pad on an upper surface of the first semiconductor chip, a lower pad on a lower surface of the second semiconductor chip that faces the upper surface of the first semiconductor chip, a connecting bump between the upper pad and the lower pad, a lower film on the upper surface of the first semiconductor chip, and on a side surface of the upper pad and an upper film between the lower film and the lower surface of the second semiconductor chip, and on a side surface of the lower pad, wherein the lower film includes a thermosetting material, the upper film includes a photocurable material, and a side surface of the lower film protrudes outward beyond a side surface of the first semiconductor chip.

Abstract: A semiconductor package includes a first substrate including a circuit pattern and a dummy pattern on an upper face of the first substrate, a solder ball, a second substrate on the first substrate, and an underfill material layer between the first and second substrates. The underfill material layer wraps around the solder ball. The dummy pattern is not electrically connected to the circuit pattern. The first substrate includes a solder resist layer on the circuit pattern and the dummy pattern. The solder resist layer includes a first opening for exposing at least a part of the circuit pattern. The solder ball is in the first opening and electrically insulated from the dummy pattern by the solder resist layer. The second substrate is electrically connected to the first substrate by the solder ball. The second substrate is electrically insulated from the dummy pattern by the solder resist layer.

Abstract: A semiconductor package includes: a buffer die; a plurality of memory dies stacked on the buffer die; a mold layer covering a portion of a top surface of the buffer die and lateral surfaces of the plurality of memory dies; and an inorganic layer disposed on the mold layer, wherein the inorganic layer covers at least a portion of the lateral surface of an uppermost memory die of the plurality of memory dies, wherein a top surface of the inorganic layer is substantially coplanar with a top surface of the uppermost memory die of the plurality of memory dies, and wherein the inorganic layer includes oxide or nitride.

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate, a seed layer on the substrate, and a wiring pad on the seed layer. The wiring pad includes a pad portion, and a capping layer on the seed layer and covering a top surface and a lateral surface of the pad portion. A bottom surface of the pad portion is in contact with a top surface of the seed layer. A width of the top surface of the pad portion is greater than a width of the bottom surface of the pad portion.

Abstract: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.

Abstract: Disclosed is a semiconductor package with increased thermal radiation efficiency, which includes: a first die having signal and dummy regions and including first vias in the signal region, a second die on the first die and including second vias in the signal region, first die pads on a top surface of the first die and coupled to the first vias, first connection terminals on the first die pads which couple the second vias to the first vias, second die pads in the dummy region and on the top surface of the first die, and second connection terminals on the second die pads and electrically insulated from the first vias and the second vias. Each of the second die pads has a rectangular planar shape whose major axis is provided along a direction that leads away from the signal region.

Abstract: There is provided a semiconductor device with improved product reliability. The semiconductor device includes a substrate, a structure on the substrate and including multilayer metal patterns and multilayer insulating layers, and a pad layer on the structure and including a plurality of bonding pads, wherein a plurality of uppermost patterns at an uppermost layer among the multilayer metal patterns include electrode patterns for transferring signals and alleviation patterns that do not transfer the signals, a first ratio of the alleviation patterns within a first reference shape at a first distance from an edge of the structure is greater than a second ratio of the alleviation patterns within a second reference shape at a second distance from the edge of the structure, and the first distance is greater than the second distance.

Abstract: A semiconductor package including a package substrate, a connection substrate on the package substrate and having on a lower corner of the connection substrate a recession that faces a top surface of the package substrate, a semiconductor chip on the connection substrate, a plurality of first connection terminals connecting the connection substrate to the semiconductor chip, and a plurality of second connection terminals connecting the package substrate to the connection substrate. The recession is laterally spaced apart from the second connection terminals.

Abstract: A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.

Abstract: There is provided a semiconductor device comprising a first semiconductor chip which includes a first chip substrate, and a first through via penetrating the first chip substrate, a second semiconductor chip disposed on the first semiconductor chip, and includes a second chip substrate, and a second through via penetrating the second chip substrate, and a connecting terminal disposed between the first semiconductor chip and the second semiconductor chip to electrically connect the first through via and the second through via. The semiconductor device further comprising an inter-chip molding material which includes a filling portion that fills between the first semiconductor chip and the second semiconductor chip and encloses the connecting terminal, an extension portion that extends along at least a part of a side surface of the second semiconductor chip, and a protruding portion protruding from the extension portion.

Abstract: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.

Abstract: Disclosed is a semiconductor package with increased thermal radiation efficiency, which includes: a first die having signal and dummy regions and including first vias in the signal region, a second die on the first die and including second vias in the signal region, first die pads on a top surface of the first die and coupled to the first vias, first connection terminals on the first die pads which couple the second vias to the first vias, second die pads in the dummy region and on the top surface of the first die, and second connection terminals on the second die pads and electrically insulated from the first vias and the second vias. Each of the second die pads has a rectangular planar shape whose major axis is provided along a direction that leads away from the signal region.

Abstract: A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.

Abstract: There is provided a semiconductor device comprising a first semiconductor chip which includes a first chip substrate, and a first through via penetrating the first chip substrate, a second semiconductor chip disposed on the first semiconductor chip, and includes a second chip substrate, and a second through via penetrating the second chip substrate, and a connecting terminal disposed between the first semiconductor chip and the second semiconductor chip to electrically connect the first through via and the second through via. The semiconductor device further comprising an inter-chip molding material which includes a filling portion that fills between the first semiconductor chip and the second semiconductor chip and encloses the connecting terminal, an extension portion that extends along at least a part of a side surface of the second semiconductor chip, and a protruding portion protruding from the extension portion.

Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer and a conductive element in the insulating layer. The semiconductor device includes a first barrier pattern in contact with a surface of the conductive element and a surface of the insulating layer. The semiconductor device includes a second barrier pattern on the first barrier pattern. Moreover, the semiconductor device includes a metal pattern on the second barrier pattern. Related semiconductor packages are also provided.

Abstract: A three-dimensional semiconductor memory device may include a bottom structure and a top structure thereon. The bottom structure may include a semiconductor substrate including a cell array region and a connection region extending therefrom, and a first stack including first gate electrodes and first interlayer insulating layers alternately stacked on the semiconductor substrate. The top structure may include a second stack including second gate electrodes and second interlayer insulating layers alternately stacked on the first stack. Respective lengths of the first gate electrodes in a second direction may decrease as a distance in a first direction increases, and respective lengths of the second gate electrodes in the second direction may increase as a distance in the first direction increases. The first direction may be perpendicular to a bottom surface of the semiconductor substrate, and the second direction may be parallel to the bottom surface of the semiconductor substrate.

Abstract: A semiconductor package includes a buffer chip configured to include a first dummy region and a second dummy region and to include first pads on rear surfaces of substrates of the first and second dummy regions; and a first core chip stacked at an upper portion of the buffer to include a bump 116 coupled to the first pad and positioned on an entire surface of the substrate, wherein the first pad is positioned in a line shape having a length including at least two bumps.

Abstract: An image sensor package according to an embodiment includes: a substrate including a metal portion; an image sensor chip on the substrate; and a transparent glass cover disposed on the substrate and including an upper plate and sidewalls, the upper plate and the sidewalls defined by a cavity at a lower portion and spaced from the image sensor chip, wherein the sidewalls are directly bonded to the metal portion of the substrate, and the image sensor chip is sealed by the transparent glass cover and the substrate.

Abstract: An embodiment provides a semiconductor package including: a first redistribution layer substrate; a semiconductor chip on the first redistribution layer substrate; a coupling member on the first redistribution layer substrate, wherein the coupling member is spaced apart from the semiconductor chip; an encapsulant on the first redistribution layer substrate, the semiconductor chip, and the coupling member; and a second redistribution layer substrate on the encapsulant, wherein the coupling member includes a vertical wire and a metal portion extending around the vertical wire, and wherein a first end of the coupling member is electrically connected to the first redistribution layer substrate, and a second end of the coupling member is electrically connected to the second redistribution layer substrate.