Abstract: Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Abstract: Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Abstract: A planar waveguide device (PWD) for interacting with a fluid (FLD) is disclosed, the planar waveguide device (PWD) comprising a waveguide layer (WGL) for supporting optical confinement, a coupling arrangement (CPA) for in-coupling and out-coupling of light into and from the waveguide layer (WGL), a fluid zone (FZN) for accommodating the fluid (FLD), a filter layer (FTL) arranged between the fluid zone (FZN) and the waveguide layer (WGL) in an interaction region (IAR) of the waveguide layer (WGL), wherein the filter layer (FTL) comprises filter openings (FOP) arranged to allow the fluid (FLD) to interact with an evanescent field of light guided by the waveguide layer (WGL), wherein the filter openings (FOP) are adapted to prevent particles (PAR) larger than a predefined size from interacting with said evanescent field, wherein the filter openings (FOP) are arranged as line openings having their longitudinal direction in parallel with the direction of propagation (DOP) of light guided by the waveguide lay

Abstract: The present invention relates to an integrated frequency referencing system. The integrated frequency referencing control system comprises inter alia a substrate and an optical pathway being integrated on the substrate and being configured and operable to enable propagation for light signals. The optical pathway comprises an electro-optic modulator structure being configured and operable to impart a unique identification modulation to at least one input optical signal emitted by the light source, at least one optical dielectric waveguide being configured and operable to enable confinement and propagation of the at least one input modulated optical signal therethrough, and an atomic vapor cell accommodating atoms or molecules providing at least one atomic or molecular transition.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: A planar waveguide device (PWD) for interacting with a fluid (FLD) is disclosed, the planar waveguide device (PWD) comprising a waveguide layer (WGL) for supporting optical confinement, a coupling arrangement (CPA) for in-coupling and out-coupling of light into and from the waveguide layer (WGL), a fluid zone (FZN) for accommodating the fluid (FLD), a filter layer (FTL) arranged between the fluid zone (FZN) and the waveguide layer (WGL) in an interaction region (IAR) of the waveguide layer (WGL), wherein the filter layer (FTL) comprises filter openings (FOP) arranged to allow the fluid (FLD) to interact with an evanescent field of light guided by the waveguide layer (WGL), wherein the filter openings (FOP) are adapted to prevent particles (PAR) larger than a predefined size from interacting with said evanescent field, wherein the filter openings (FOP) are arranged as line openings having their longitudinal direction in parallel with the direction of propagation (DOP) of light guided by the waveguide lay

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: Focal plane arrays (FPAs) of plasmonic enhanced pyramidal silicon Schottky photodetectors (PDs) operative in the short wave infrared (SWIR) regime, and imaging systems combining such FPAs with active illumination sources and readout integrated circuit (ROIC). Such imaging systems enable imaging in the SWIR regime using inexpensive silicon detector arrays, specifically in vehicular environments in which such an imaging system may be mounted on a vehicle and image various moving and stationary targets.

Abstract: An active imaging system comprising an illumination source for emitting a radiation pulse towards a target resulting in radiation reflected from the target, a receiver comprising one or more germanium photodiodes for receiving the reflected radiation, and a method for using same.

Abstract: An active imaging system comprising an illumination source for emitting a radiation pulse towards a target resulting in radiation reflected from the target, a receiver comprising one or more germanium photodiodes for receiving the reflected radiation, and a method for using same.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Abstract: The present invention relates to an integrated frequency referencing system. The integrated frequency referencing control system comprises inter alia a substrate and an optical pathway being integrated on the substrate and being configured and operable to enable propagation for light signals. The optical pathway comprises an electro-optic modulator structure being configured and operable to impart a unique identification modulation to at least one input optical signal emitted by the light source, at least one optical dielectric waveguide being configured and operable to enable confinement and propagation of the at least one input modulated optical signal therethrough, and an atomic vapor cell accommodating atoms or molecules providing at least one atomic or molecular transition.

Abstract: Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Abstract: A planar waveguide device (PWD) for interacting with a fluid (FLD) is disclosed, the planar waveguide device (PWD) comprising a waveguide layer (WGL) for supporting optical confinement, a coupling arrangement (CPA) for in-coupling and out-coupling of light into and from the waveguide layer (WGL), a fluid zone (FZN) for accommodating the fluid (FLD), a filter layer (FTL) arranged between the fluid zone (FZN) and the waveguide layer (WGL) in an interaction region (IAR) of the waveguide layer (WGL), wherein the filter layer (FTL) comprises filter openings (FOP) arranged to allow the fluid (FLD) to interact with an evanescent field of light guided by the waveguide layer (WGL), wherein the filter openings (FOP) are adapted to prevent particles (PAR) larger than a predefined size from interacting with said evanescent field, wherein the filter openings (FOP) are arranged as line openings having their longitudinal direction in parallel with the direction of propagation (DOP) of light guided by the waveguide lay

Abstract: A waveguide device is provided. The device comprises a semiconductor waveguide structure and at least one charge storing structure. Said at least one charge storing structure is configured to apply selected electric field on the semiconductor waveguide structure to thereby vary refractive index within said semiconductor waveguide structure. Wherein the charge storing structure comprises a charge trapping layer configured for storing charge carriers configured for selectively generating constant electric field of a predetermined magnitude. The device may be used in optical resonators, interferometer for optical and optoelectronic applications, capable of desirably varying refractive index within the waveguide structure.

Abstract: An interferometer includes an optical assembly for directing an input optical field, a space-variant polarization converter, and an analyzer. The optical assembly is configured and operable to produce first and second spatially separated optical fields of incident coherent radiation of substantially the same intensity and different polarizations and to define first and second spatially separated optical paths for propagation of said first and second optical fields thereby allowing interaction between the first optical field and an element affecting a phase thereof in said first optical path. The space-variant polarization converter is accommodated in said combined path and being configured and operable to simultaneously apply space-variant polarization conversion to two beams corresponding to combined first and second optical fields having different polarizations and produce radially and azimuthally polarized beams respectively. The analyzer is located downstream of said polarization converter.