Abstract: Ceramic proton-conducting oxide membranes are described herein, which are useful for separating steam from organic chemicals under process conditions. The membranes have a layered structure, with a dense film of the perovskite over a porous composite substrate comprising the perovskite material and a metallic material (e.g., Ni, Cu, or Pt). The perovskite comprises an ABO3-type structure, where “A” is Ba and “B” is a specified combination of Ce, Zr, and Y. The perovskite ceramic materials described herein have an empirical formula of Ba(CexZr1-x-nYn)O3-?, wherein 0<x<0.8 (e.g., 0.1?x?0.7 or 0.2?x?0.5); and 0.05?n?0.2; and ?=n/2. In some embodiments n is about 0.2. In some other embodiments 0.6?x?0.8; and n is about 0.2, such as Ba(Ce0.7Zr0.1Y0.2)O3-?, also referred to herein as BCZY712.

Abstract: Ceramic proton-conducting oxide membranes are described herein, which are useful for separating steam from organic chemicals under process conditions. The membranes have a layered structure, with a dense film of the perovskite over a porous composite substrate comprising the perovskite material and a metallic material (e.g., Ni, Cu, or Pt). The perovskite comprises an ABO3-type structure, where “A” is Ba and “B” is a specified combination of Ce, Zr, and Y. The perovskite ceramic materials described herein have an empirical formula of Ba(CexZr1-x-nYn)O3-?, wherein 0<x<0.8 (e.g., 0.1?x?0.7 or 0.2?x?0.5); and 0.05?n?0.2; and ?=n/2. In some embodiments n is about 0.2. In some other embodiments 0.6?x?0.8; and n is about 0.2, such as Ba(Ce0.7Zr0.1Y0.2)O3-?, also referred to herein as BCZY712.

Abstract: A mixed matrix membrane comprises a support structure. The support structure comprises a glassy polymer matrix, and nanodiamond particles dispersed within the glassy polymer matrix. A gas separation membrane apparatus, a gaseous fluid treatment system, and a method of forming a mixed matrix membrane are also described.

Abstract: A method for making covetic metal-nanostructured carbon composites or compositions is described herein. This method is advantageous, in that it provides substantially oxygen-free covetic materials and allows precise control of the composition of the covetic material to be produced. The method comprises introducing carbon into a molten metal in a heated reactor under low oxygen partial pressure, while passing an electric current through the molten metal. The reactor is heated at a temperature sufficient to form a network of nanostructured carbon within a matrix of the metal. After heating the covetic material is recovered from the reactor.

Abstract: A method for preparing a covetic, nanocarbon-infused, metal composite material is described is herein. The method comprises heating a stirring molten mixture of a metal (e.g., Cu, Al, Ag, Au, Fe, Ni, Pt, Sn, Pb, Zn, Si, and the like) and carbon (e.g., graphite) at a temperature sufficient to maintain the mixture in the molten state in a reactor vessel, while passing an electric current through the molten mixture via at least two spaced electrodes submerged or partially submerged in the molten metal. Each of the electrodes has an electrical conductivity that is at least about 50 percent of the electrical conductivity of the molten mixture at the temperature of the molten mixture. Preferably, the conductivity of the electrodes is equal to or greater than the conductivity of the molten mixture.

Abstract: A method for making covetic metal-carbon composites or compositions by electron beam melt heating under vacuum (pressure <10?3 Torr) is described herein. This fabrication method is advantageous, in that it provides oxygen-free covetic materials in a process that allows precise control of the composition of the covetic material to be produced. The method described herein also can be applied to produce multi-element-carbon composites within a metal or alloy matrix, including high melting temperature materials such as ceramic particles or prefabricated nano- or micro-structures, such as carbon nanotubes or graphene compounds. The covetic reaction between metal and carbon takes place under the influence of flowing electrons through the melted metal-carbon precursor. This process creates strong bonding between nanocarbon structure and the metal elements in the melt.

Abstract: A method for making covetic metal-nanostructured carbon composites or compositions is described herein. This method is advantageous, in that it provides substantially oxygen-free covetic materials and allows precise control of the composition of the covetic material to be produced. The method comprises introducing carbon into a molten metal in a heated reactor under low oxygen partial pressure, while passing an electric current through the molten metal. The reactor is heated at a temperature sufficient to form a network of nanostructured carbon within a matrix of the metal. After heating the covetic material is recovered from the reactor.

Abstract: The invention provides a process for making ceramic film capacitors, the process comprising supplying a flexible substrate, depositing a first electrode on a first region of the flexible substrate, wherein the first electrode defines a first thickness, overlaying the first electrode with a dielectric film; and depositing a second electrode on the ceramic film, wherein the second electrode defines a second thickness. Also provided is a capacitor comprising flexible substrate, a first electrode deposited on said flexible substrate, a dielectric overlaying the first electrode; and a second electrode deposited on said dielectric.

Abstract: A method for making covetic metal-carbon composites or compositions by electron beam melt heating under vacuum (pressure <10?3 Torr) is described herein. This fabrication method is advantageous, in that it provides oxygen-free covetic materials in a process that allows precise control of the composition of the covetic material to be produced. The method described herein also can be applied to produce multi-element-carbon composites within a metal or alloy matrix, including high melting temperature materials such as ceramic particles or prefabricated nano- or micro-structures, such as carbon nanotubes or graphene compounds. The covetic reaction between metal and carbon takes place under the influence of flowing electrons through the melted metal-carbon precursor. This process creates strong bonding between nanocarbon structure and the metal elements in the melt.

Abstract: The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.

Abstract: A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300° C.

Abstract: The present invention provides a multilayer anode/electrolyte assembly comprising a porous anode substrate and a layered solid electrolyte in contact therewith. The layered solid electrolyte includes a first dense layer of yttrium-doped barium zirconate (BZY), optionally including another metal besides Y, Ba, and Zr (e.g., a lanthanide metal such as Pr) on one surface thereof, a second dense layer of yttrium-doped barium cerate (BCY), and an interfacial layer between and contacting the BZY and BCY layers. The interfacial layer comprises a solid solution of the BZY and BCY electrolytes. The porous anode substrate comprises at least one porous ceramic material that is stable to carbon dioxide and water (e.g., porous BZY), as well as an electrically conductive metal and/or metal oxide (e.g., Ni, NiO, and the like).

Abstract: The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

Abstract: The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.

Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

Abstract: The invention provides a dielectric-conductive substrate construct comprising a conductive material having a first surface and a second surface, and a dielectric film directly contacting the first surface and substantially covering the first surface, wherein the second surface is exposed to the ambient environment. Also provided is a method for producing a two component dielectric-conductive substrate, the method comprising supplying a base metal; and directly contacting a ceramic to the base metal to form a ceramic-metal interface while simultaneously preventing the formation of electrically insulative layers at the interface.

Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.