Patents by Inventor Uthamalingam Balachandran
Uthamalingam Balachandran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9299496Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.Type: GrantFiled: October 2, 2015Date of Patent: March 29, 2016Assignees: Delphi Technologies, Inc., UChicago Argonne, LLCInventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
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Publication number: 20160027580Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.Type: ApplicationFiled: October 2, 2015Publication date: January 28, 2016Inventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
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Patent number: 9230739Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.Type: GrantFiled: October 29, 2013Date of Patent: January 5, 2016Assignee: UChicago Argonne, LLCInventors: M. Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine W K Wong, Beihai Ma, Uthamalingam Balachandran
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Publication number: 20150364257Abstract: The invention provides a process for making ceramic film capacitors, the process comprising supplying a flexible substrate, depositing a first electrode on a first region of the flexible substrate, wherein the first electrode defines a first thickness, overlaying the first electrode with a dielectric film; and depositing a second electrode on the ceramic film, wherein the second electrode defines a second thickness. Also provided is a capacitor comprising flexible substrate, a first electrode deposited on said flexible substrate, a dielectric overlaying the first electrode; and a second electrode deposited on said dielectric.Type: ApplicationFiled: June 5, 2015Publication date: December 17, 2015Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Uthamalingam Balachandran, Stephen E. Dorris, Tae H. Lee
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Publication number: 20150170845Abstract: The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.Type: ApplicationFiled: February 25, 2015Publication date: June 18, 2015Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
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Publication number: 20150116894Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.Type: ApplicationFiled: October 29, 2013Publication date: April 30, 2015Inventors: M. RAY FAIRCHILD, RALPH S. TAYLOR, CARL W. BERLIN, CELINE WK WONG, BEIHAI MA, UTHAMALINGAM BALACHANDRAN
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Patent number: 8974856Abstract: The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.Type: GrantFiled: May 25, 2010Date of Patent: March 10, 2015Assignee: UChicago Argonne, LLCInventors: Beihai Ma, Manoj Narayanan, Stephen E. Dorris, Uthamalingam Balachandran
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Patent number: 8900523Abstract: A method of converting C2 and/or higher alkanes to olefins by contacting a feedstock containing C2 and/or higher alkanes with a first surface of a metal composite membrane of a sintered homogenous mixture of an Al oxide or stabilized or partially stabilized Zr oxide ceramic powder and a metal powder of one or more of Pd, Nb, V, Zr, Ta and/or alloys or mixtures thereof. The alkanes dehydrogenate to olefins by contact with the first surface with substantially only atomic hydrogen from the dehydrogenation of the alkanes passing through the metal composite membrane. Apparatus for effecting the conversion and separation is also disclosed.Type: GrantFiled: January 23, 2008Date of Patent: December 2, 2014Assignee: UChicago Argonne, LLC.Inventor: Uthamalingam Balachandran
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Publication number: 20140120736Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: ApplicationFiled: January 2, 2014Publication date: May 1, 2014Inventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Lie
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Patent number: 8647737Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: GrantFiled: September 30, 2011Date of Patent: February 11, 2014Assignee: UChicago Argonne, LLCInventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
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Publication number: 20130335882Abstract: The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.Type: ApplicationFiled: June 14, 2012Publication date: December 19, 2013Applicant: UCHICAGO ARGONNE, LLC.Inventors: Beihai Ma, Uthamalingam Balachandran, Shanshan Liu
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Publication number: 20130084444Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
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Publication number: 20130081540Abstract: A process for forming a palladium or palladium alloy membrane on a ceramic surface by forming a pre-colloid mixture comprising a powder palladium source, carrier fluid, dispersant and a pore former and a binder. Ultrasonically agitating the precolloid mixture and applying to a substrate with an ultrasonic nozzle and heat curing the coating form a palladium-based membrane.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: UCHICAGO ARGONNE, LLC.Inventors: Tae H. Lee, Chan Young Park, Yunxiang Lu, Stephen E. Dorris, Uthamalingam Balachandran
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Publication number: 20130071670Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.Type: ApplicationFiled: September 20, 2011Publication date: March 21, 2013Applicant: UCHICAGO ARGONNE, LLCInventors: Manoj Narayanan, Beihai Ma, Uthamalingam Balachandran, Stephen Dorris
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Publication number: 20120257324Abstract: The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.Type: ApplicationFiled: June 20, 2012Publication date: October 11, 2012Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Uthamalingam Balachandran
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Patent number: 7959716Abstract: A hydrogen permeable membrane is disclosed. The membrane is prepared by forming a mixture of metal oxide powder and ceramic oxide powder and a pore former into an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.Type: GrantFiled: September 30, 2009Date of Patent: June 14, 2011Assignee: UChicago Argonne, LLCInventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran
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Publication number: 20100302706Abstract: The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.Type: ApplicationFiled: May 25, 2010Publication date: December 2, 2010Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
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Publication number: 20100290961Abstract: A method of converting C2 and/or higher alkanes to olefins by contacting a feedstock containing C2 and/or higher alkanes with a first surface of a metal composite membrane of a sintered homogenous mixture of an Al oxide or stabilized or partially stabilized Zr oxide ceramic powder and a metal powder of one or more of Pd, Nb, V, Zr, Ta and/or alloys or mixtures thereof. The alkanes dehydrogenate to olefins by contact with the first surface with substantially only atomic hydrogen from the dehydrogenation of the alkanes passing through the metal composite membrane. Apparatus for effecting the conversion and separation is also disclosed.Type: ApplicationFiled: January 23, 2008Publication date: November 18, 2010Applicant: UChicago Argonne, LLCInventor: Uthamalingam Balachandran
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Publication number: 20100031822Abstract: A hydrogen permeable membrane is disclosed. The membrane is prepared by forming a mixture of metal oxide powder and ceramic oxide powder and a pore former into an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.Type: ApplicationFiled: September 30, 2009Publication date: February 11, 2010Applicant: UChicago Argonne, LLCInventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran
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Patent number: 7604771Abstract: A thermal method of making a hydrogen permeable composition is disclosed. A mixture of metal oxide powder and ceramic oxide powder and optionally a pore former is formed and pressed to form an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.Type: GrantFiled: May 5, 2006Date of Patent: October 20, 2009Assignee: UChicago Argonne, LLCInventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran