Patents by Inventor Uthamalingam Balachandran

Uthamalingam Balachandran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9299496
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: March 29, 2016
    Assignees: Delphi Technologies, Inc., UChicago Argonne, LLC
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
  • Publication number: 20160027580
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Application
    Filed: October 2, 2015
    Publication date: January 28, 2016
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
  • Patent number: 9230739
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: January 5, 2016
    Assignee: UChicago Argonne, LLC
    Inventors: M. Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine W K Wong, Beihai Ma, Uthamalingam Balachandran
  • Publication number: 20150364257
    Abstract: The invention provides a process for making ceramic film capacitors, the process comprising supplying a flexible substrate, depositing a first electrode on a first region of the flexible substrate, wherein the first electrode defines a first thickness, overlaying the first electrode with a dielectric film; and depositing a second electrode on the ceramic film, wherein the second electrode defines a second thickness. Also provided is a capacitor comprising flexible substrate, a first electrode deposited on said flexible substrate, a dielectric overlaying the first electrode; and a second electrode deposited on said dielectric.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 17, 2015
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran, Stephen E. Dorris, Tae H. Lee
  • Publication number: 20150170845
    Abstract: The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.
    Type: Application
    Filed: February 25, 2015
    Publication date: June 18, 2015
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
  • Publication number: 20150116894
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Application
    Filed: October 29, 2013
    Publication date: April 30, 2015
    Inventors: M. RAY FAIRCHILD, RALPH S. TAYLOR, CARL W. BERLIN, CELINE WK WONG, BEIHAI MA, UTHAMALINGAM BALACHANDRAN
  • Patent number: 8974856
    Abstract: The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: March 10, 2015
    Assignee: UChicago Argonne, LLC
    Inventors: Beihai Ma, Manoj Narayanan, Stephen E. Dorris, Uthamalingam Balachandran
  • Patent number: 8900523
    Abstract: A method of converting C2 and/or higher alkanes to olefins by contacting a feedstock containing C2 and/or higher alkanes with a first surface of a metal composite membrane of a sintered homogenous mixture of an Al oxide or stabilized or partially stabilized Zr oxide ceramic powder and a metal powder of one or more of Pd, Nb, V, Zr, Ta and/or alloys or mixtures thereof. The alkanes dehydrogenate to olefins by contact with the first surface with substantially only atomic hydrogen from the dehydrogenation of the alkanes passing through the metal composite membrane. Apparatus for effecting the conversion and separation is also disclosed.
    Type: Grant
    Filed: January 23, 2008
    Date of Patent: December 2, 2014
    Assignee: UChicago Argonne, LLC.
    Inventor: Uthamalingam Balachandran
  • Publication number: 20140120736
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Application
    Filed: January 2, 2014
    Publication date: May 1, 2014
    Inventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Lie
  • Patent number: 8647737
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: February 11, 2014
    Assignee: UChicago Argonne, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
  • Publication number: 20130335882
    Abstract: The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: UCHICAGO ARGONNE, LLC.
    Inventors: Beihai Ma, Uthamalingam Balachandran, Shanshan Liu
  • Publication number: 20130084444
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
  • Publication number: 20130081540
    Abstract: A process for forming a palladium or palladium alloy membrane on a ceramic surface by forming a pre-colloid mixture comprising a powder palladium source, carrier fluid, dispersant and a pore former and a binder. Ultrasonically agitating the precolloid mixture and applying to a substrate with an ultrasonic nozzle and heat curing the coating form a palladium-based membrane.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: UCHICAGO ARGONNE, LLC.
    Inventors: Tae H. Lee, Chan Young Park, Yunxiang Lu, Stephen E. Dorris, Uthamalingam Balachandran
  • Publication number: 20130071670
    Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
    Type: Application
    Filed: September 20, 2011
    Publication date: March 21, 2013
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Manoj Narayanan, Beihai Ma, Uthamalingam Balachandran, Stephen Dorris
  • Publication number: 20120257324
    Abstract: The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.
    Type: Application
    Filed: June 20, 2012
    Publication date: October 11, 2012
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran
  • Patent number: 7959716
    Abstract: A hydrogen permeable membrane is disclosed. The membrane is prepared by forming a mixture of metal oxide powder and ceramic oxide powder and a pore former into an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: June 14, 2011
    Assignee: UChicago Argonne, LLC
    Inventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran
  • Publication number: 20100302706
    Abstract: The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
    Type: Application
    Filed: May 25, 2010
    Publication date: December 2, 2010
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
  • Publication number: 20100290961
    Abstract: A method of converting C2 and/or higher alkanes to olefins by contacting a feedstock containing C2 and/or higher alkanes with a first surface of a metal composite membrane of a sintered homogenous mixture of an Al oxide or stabilized or partially stabilized Zr oxide ceramic powder and a metal powder of one or more of Pd, Nb, V, Zr, Ta and/or alloys or mixtures thereof. The alkanes dehydrogenate to olefins by contact with the first surface with substantially only atomic hydrogen from the dehydrogenation of the alkanes passing through the metal composite membrane. Apparatus for effecting the conversion and separation is also disclosed.
    Type: Application
    Filed: January 23, 2008
    Publication date: November 18, 2010
    Applicant: UChicago Argonne, LLC
    Inventor: Uthamalingam Balachandran
  • Publication number: 20100031822
    Abstract: A hydrogen permeable membrane is disclosed. The membrane is prepared by forming a mixture of metal oxide powder and ceramic oxide powder and a pore former into an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.
    Type: Application
    Filed: September 30, 2009
    Publication date: February 11, 2010
    Applicant: UChicago Argonne, LLC
    Inventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran
  • Patent number: 7604771
    Abstract: A thermal method of making a hydrogen permeable composition is disclosed. A mixture of metal oxide powder and ceramic oxide powder and optionally a pore former is formed and pressed to form an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: October 20, 2009
    Assignee: UChicago Argonne, LLC
    Inventors: Sun-Ju Song, Tae H. Lee, Ling Chen, Stephen E. Dorris, Uthamalingam Balachandran