Abstract: An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.

Abstract: An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.

Abstract: A method and apparatus for selecting Si wafer WP based on individual or multiple DFM decks for Si-feed-forward and Si-feed-back analysis are provided. Embodiments include generating markers for a wafer from an individual DFM deck; generating UCF Indexes; determining whether a representative marker corresponding to a UCF is a candidate for WP prediction; extracting markers corresponding to that UCF-Index (UEF data) from a candidate; performing a UCF-Index-based sampling on the extracted UEF data set if a number of markers in the extracted UEF data set is larger than an inspection requirement; adding a location of each marker or group of markers in the extracted UEF data set to a sitelist after the UCF-Index-based sampling; sending the sitelist to a foundry for metrology analysis on sitelist locations; and adding the sitelist locations and corresponding UCF Index and metrology parameters to a design analysis database for analyzing other wafers/UCF Indexes.

Abstract: Integrated devices comprising pinched hysteresis loop (PHL) materials in a capacitor or a transistor stack are disclosed. PHL materials include field induced ferroelectrics (FFE), anti-ferroelectric (AFE) and relaxor type ferroelectric (RFE) materials. Each integrated device includes a material stack with a PHL material layer disposed between two electrodes. Application of this material is dependent on inducing of an electric field bias over the stack. According to one option, electrodes having different workfunction values can be employed to induce the required built-in bias field and enable use of PHL materials. According to another option, a PHL material and charges, e.g., a charge interlayer, are disposed between two electrodes such that an induced built-in bias field appears. Integrated devices employing the PHL material stack include memories, transistors, and piezo- and pyroelectric devices.

Abstract: A method and apparatus for selecting Si wafer WP based on individual or multiple DFM decks for Si-feed-forward and Si-feed-back analysis are provided. Embodiments include generating markers for a wafer from an individual DFM deck; generating UCF Indexes; determining whether a representative marker corresponding to a UCF is a candidate for WP prediction; extracting markers corresponding to that UCF-Index (UEF data) from a candidate; performing a UCF-Index-based sampling on the extracted UEF data set if a number of markers in the extracted UEF data set is larger than an inspection requirement; adding a location of each marker or group of markers in the extracted UEF data set to a sitelist after the UCF-Index-based sampling; sending the sitelist to a foundry for metrology analysis on sitelist locations; and adding the sitelist locations and corresponding UCF Index and metrology parameters to a design analysis database for analyzing other wafers/UCF Indexes.

Abstract: Integrated devices comprising pinched hysteresis loop (PHL) materials in a capacitor or a transistor stack are disclosed. PHL materials include field induced ferroelectrics (FFE), anti-ferroelectric (AFE) and relaxor type ferroelectric (RFE) materials. Each integrated device includes a material stack with a PHL material layer disposed between two electrodes. Application of this material is dependent on inducing of an electric field bias over the stack. According to one option, electrodes having different workfunction values can be employed to induce the required built-in bias field and enable use of PHL materials. According to another option, a PHL material and charges, e.g., a charge interlayer, are disposed between two electrodes such that an induced built-in bias field appears. Integrated devices employing the PHL material stack include memories, transistors, and piezo- and pyroelectric devices.

Abstract: The present disclosure provides a first method for updating firmware of a computer system, which is embedded in a technical device, wherein the technical device has a volatile memory module, wherein the technical device has a non-volatile memory module, in which a firmware update package is stored, wherein the firmware update package contains individual files and associated first checksums, wherein the method runs through the following steps in the specified sequence: a restart (G), a subsequent booting of the computer system (H), and checking if an indicator file exists in the non-volatile memory module (I). Also provided is a second method for updating firmware of the computer system, which is embedded in a technical device, wherein the method runs through the following steps in the specified sequence: a restart (G), a subsequent booting of the computer system (H), and a check as to whether an indicator file exists in the non-volatile memory module (I).

Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.

Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.

Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).

Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).

Abstract: The present invention refers to an electrode comprising a first metallic layer and a compound comprising at least one of a nitride, oxide, and oxynitride of a second metallic material.

Abstract: The invention relates to a method and a device for producing parts (1) having a sealing layer (2) on the surface, and corresponding parts. Said method and device are improved in that the sealing layer (2) is applied to the surface in the form of a water-free and solvent-free reactive hot melt layer based on polyurethane and hardened by atmospheric humidity, and the inventive device comprises an application station (6), a transport device (5) and a smoothing station (8).

Abstract: A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, while the dielectric film comprises a dopant content of 10 atomic percent or less of the dielectric film material excluding oxygen. A process for fabricating a capacitor comprises a step of forming a bottom electrode of the capacitor. On the bottom electrode, a dielectric film comprising zirconium oxide is deposited, and a step for introducing a dopant oxide into the dielectric film performed. On the dielectric structure, a top electrode is formed.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Abstract: The present invention refers to an electrode comprising a first metallic layer and a compound comprising at least one of a nitride, oxide, and oxynitride of a second metallic material.

Abstract: An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.

Abstract: A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, while the dielectric film comprises a dopant content of 10 atomic percent or less of the dielectric film material excluding oxygen. A process for fabricating a capacitor comprises a step of forming a bottom electrode of the capacitor. On the bottom electrode, a dielectric film comprising zirconium oxide is deposited, and a step for introducing a dopant oxide into the dielectric film performed. On the dielectric structure, a top electrode is formed.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal oxide. In an initial step, a substrate is provided. In a further step, a first precursor comprising a transition metal containing compound, and a second precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a transition metal containing material. In another step, a third precursor comprising a dopant containing compound, and a fourth precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a dopant containing material. The transition metal comprises at least one of zirconium and hafnium. The dopant comprises at least one of barium, strontium, calcium, niobium, bismuth, magnesium, and cerium.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.