Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract: A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region.

Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.

Abstract: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Abstract: A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region.

Abstract: A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract: Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.

Abstract: A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.

Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.

Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.