Abstract: A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber.

Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Abstract: A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.

Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.

Abstract: A module for producing extreme ultraviolet radiation, including an extreme ultraviolet radiation-emitting source, the source being provided with a supply configured to supply a fluid of an ignition material to a predetermined target ignition position and a target-igniting mechanism constructed and arranged to produce a plasma from the ignition material at the target ignition position, the plasma emitting the extreme ultraviolet radiation; a collector mirror constructed and arranged to focus radiation emitted by the plasma at a focal point; and a heat sink having a thermal energy-diverting surface constructed and arranged to divert thermal energy away from the target ignition position, wherein the heat sink is located at a position proximate the target ignition position.

Abstract: An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).

Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Abstract: A discharge produced plasma radiation source includes a laser beam pulse generator configured to provide a laser beam pulse to trigger a pinch in a plasma of the discharge produced plasma radiation source. The laser beam pulse generator is arranged to provide a laser beam pulse having an energy greater than an optimum laser beam pulse energy that corresponds to a maximum output of a given wavelength of radiation for a given discharge energy.

Abstract: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

Abstract: Embodiments of the invention relate to a mirror (30). The mirror includes a mirroring surface and a profiled coating layer (32a) having an outer surface, wherein one or more wedged elements are formed by the outer surface with respect to the mirroring surface, and wherein the one or more wedged elements having a wedge angle (ø) in a range of approximately 10-200 mrad. The profiled coating layer may have a curved outer surface. The profiled coating layer may be formed from at least one of the following materials: Be, B, C, P, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Ru, Nb, Mo, Ba, La, Ce, Pr, Pa and U.

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract: A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation, the radiation source including a chamber in which a plasma is generated; a collector mirror configured to reflect radiation emitted by the plasma; and a debris mitigation system including a gas supply system configured to supply a first gas flow toward the plasma, the first gas flow being selected to thermalize debris generated by the plasma, and a plurality of gas manifolds arranged at a location proximate the collector mirror, the gas manifolds configured to supply a second gas flow in the chamber, the second gas flow being directed toward the plasma to prevent thermalized debris from depositing on the collector mirror.

Abstract: A lithographic apparatus has a support that is provided with burls for holding an object. The support has been fabricated with a lithographic manufacturing method, e.g., a MEMS-technology, so as to create burls whose orientations or positions are individually electrically controllable.

Abstract: A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.

Abstract: A lithographic apparatus and device manufacturing method makes use of a liquid confined in a reservoir between the projection system and the substrate. Bubbles forming in the liquid from dissolved atmospheric gases or from out-gassing from apparatus elements exposed to the liquid are detected and/or removed so that they do not interfere with exposure and lead to printing defects on the substrate. Detection may be carried out by measuring the frequency dependence of ultrasonic attenuation in the liquid and bubble removal may be implemented by degassing and pressurizing the liquid, isolating the liquid from the atmosphere, using liquids of low surface tension, providing a continuous flow of liquid through the imaging field, and/or phase shifting ultrasonic standing-wave node patterns.

Abstract: A method of generating radiation for a lithography apparatus. The method comprises providing a continuously renewing fuel target (50) at a plasma formation location (12) and directing a continuous-wave excitation beam (6) at the plasma formation location such that fuel within the continuously renewing fuel target is excited by the continuous-wave excitation beam to generate a radiation generating plasma.

Abstract: A radiation source for a lithographic apparatus uses a plurality of fiber lasers to ignite a fuel droplet at an ignition location to generate EUV radiation. The fiber lasers may be provided to emit parallel to an optical axis and a telescopic optical system is provided to focus the lasers at the ignition location, or the lasers may be directed towards the optical axis with a final focus lens being used to reduce beam waist. The lasers may be provided in two or more groups to allow them to be independently controlled and some of the lasers may be focused at a different location to provide a pre-pulse. Radiation from fiber lasers may also be combined using dichroic mirrors.

Abstract: A radiation source (e.g., LPP— laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.