Abstract: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

Abstract: An imprint lithography apparatus is disclosed that includes a structure located away from a substrate holder and extending across the substrate holder, and such that an imprint template arrangement is, in use, located between the structure and the substrate holder, wherein the structure has one or more arrays of lines or one or more encoders, and the substrate or substrate holder and the imprint template have a corresponding one or more encoders that face towards one or more of the one or more arrays of lines or one or more arrays of lines that face towards one or more of the one or more encoders, and the configuration determination arrangement is configured to determine a relative configuration between the substrate or substrate holder and the structure, and/or a relative configuration between the imprint template arrangement and the structure, and/or a relative configuration between the imprint template arrangement and the substrate or substrate holder.

Abstract: A lithographic apparatus and device manufacturing method makes use of a liquid confined in a reservoir between the projection system and the substrate. Bubbles forming in the liquid from dissolved atmospheric gases or from out-gassing from apparatus elements exposed to the liquid are detected and/or removed so that they do not interfere with exposure and lead to printing defects on the substrate. Detection may be carried out by measuring the frequency dependence of ultrasonic attenuation in the liquid and bubble removal may be implemented by degassing and pressurizing the liquid, isolating the liquid from the atmosphere, using liquids of low surface tension, providing a continuous flow of liquid through the imaging field, and/or phase shifting ultrasonic standing-wave node patterns.

Abstract: A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Abstract: An EUV lithographic apparatus includes a source collector apparatus in which the extreme ultraviolet radiation is generated by exciting a fuel to provide a plasma emitting the radiation. The source collector apparatus includes a chamber in fluid communication with a guide way external to the chamber. A pump for circulating buffer gas is part of the guide way, and provides a closed loop buffer gas flow. The gas flowing through the guide way traverses a gas decomposer wherein a compound of fuel material and buffer gas material is decomposed, so that decomposed buffer gas material can be fed back into the closed loop flow path.

Abstract: A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.

Abstract: According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 ?m.

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

Abstract: Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.

Abstract: A module for producing extreme ultraviolet radiation, including an extreme ultraviolet radiation-emitting source, the source being provided with a supply configured to supply a fluid of an ignition material to a predetermined target ignition position and a target-igniting mechanism constructed and arranged to produce a plasma from the ignition material at the target ignition position, the plasma emitting the extreme ultraviolet radiation; a collector mirror constructed and arranged to focus radiation emitted by the plasma at a focal point; and a heat sink having a thermal energy-diverting surface constructed and arranged to divert thermal energy away from the target ignition position, wherein the heat sink is located at a position proximate the target ignition position.

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract: A radiation source is configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which, in use, a plasma is generated, and an evaporation surface configured to evaporate a material formed as a by-product from the plasma and that is emitted to the evaporation surface. A method for removing a by-product material in or from a plasma radiation source of a lithographic apparatus includes evaporating a material which, in use, is emitted to that surface from the plasma.

Abstract: A lithographic apparatus has a support that is provided with burls for holding an object. The support has been fabricated with a lithographic manufacturing method, e.g., a MEMS-technology, so as to create burls whose orientations or positions are individually electrically controllable.

Abstract: A source-collector device is constructed and arranged to generate a radiation beam, The device includes a target unit constructed and arranged to present a target surface of plasma-forming material; a laser unit constructed and arranged to generate a beam of radiation directed onto the target surface so as to form a plasma from said plasma-forming material; a contaminant trap constructed and arranged to reduce propagation of particulate contaminants generated by the plasma; a radiation collector comprising a plurality of grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom; and a filter constructed and arranged to attenuate at least one wavelength range of the beam.

Abstract: A module for producing extreme ultraviolet radiation includes a supply configured to supply droplets of an ignition material to a predetermined target ignition position and a laser arranged to be focused on the predetermined target ignition position and to produce a plasma by hitting such a droplet which is located at the predetermined target ignition position in order to change the droplet into an extreme ultraviolet producing plasma. Also, the module includes a collector mirror having a mirror surface constructed and arranged to reflect the radiation in order to focus the radiation on a focal point. A fluid supply is constructed and arranged to form a gas flow flowing away from the mirror surface in a direction transverse with respect to the mirror surface in order to mitigate particle debris produced by the plasma.

Abstract: A lithographic patterning device deformation monitoring apparatus (38) comprising a radiation source (40), an imaging device (42), and a processor (50). The radiation source being configured to direct a plurality of beams of radiation (41) with a predetermined diameter towards a lithographic patterning device (MA) such that they are reflected by the patterning device. The imaging detector configured to detect spatial positions of the radiation beams (41?) after they have been reflected by the patterning device. The processor configured to monitor the spatial positions of the radiation beams and thereby determine the presence of a patterning device deformation. The imaging detector has an collection angle which is smaller than a minimum angle of diffraction of the radiation beams.

Abstract: A radiation source having a fuel stream generator (110) that generates and directs a fuel stream (102) along a trajectory towards a plasma formation location (104). A pre-pulse laser radiation assembly directs a first beam of laser radiation (100) at the fuel stream at the plasma formation location to generate a modified fuel target (106). A main pulse laser radiation assembly directs a second beam of laser radiation (108) at the modified fuel target at the plasma formation location to generate a radiation generating plasma (117). A collector (122) collects the radiation and directs it along an optical axis (105) of the radiation source. The first beam of laser radiation being directed toward the fuel stream substantially along the optical axis.