Abstract: A soldering agent for use in diffusion soldering processes contains, in a soldering paste, a mixture of at least partially metallic grains of a high-melting metal and a solder metal. In a diffusion soldering process, the solder metal reacts completely with the high-melting metal and metals belonging to parts that are to be joined to one another by the soldering process, to form an intermetallic phase.

Abstract: A method for forming wafers having through-wafer vias for wafer-level packaging of devices, the method comprising the steps of depositing metal on one of two wafers; bonding the two wafers using the metal deposited on the one of the two wafers; forming a through-wafer via in one of the two wafers; filling the through-wafer via with a conductive material; and forming a cavity in the one of the two wafers having the through-wafer via wherein the cavity is superposable over a device.

Abstract: Inter-connectors are typically used for interconnecting electronic components. Interconnections between electronic components are generally classified into at least two broad categories of “relatively permanent” and “readily demountable”. A “readily demountable” connector includes a spring-like contact structure of one electronic component for connecting to a terminal of another electronic component. The spring-like contact structure, also known as an inter-connector, generally requires a certain amount of contact force to effect reliable pressure contact to a terminal of an electronic component. Therefore, the shape and metallurgy of the inter-connector are important factors in determining the effectiveness of the inter-connector for making pressure connection to a terminal of the electronic component. Conventional methods of making such an inter-connector use lithographic and planarisation methods to “make” the inter-connectors in segments.

Abstract: Inter-connectors are typically used for interconnecting electronic components. Interconnections between electronic components are generally classified into at least two broad categories of “relatively permanent” and “readily demountable”. A “readily demountable” connector includes a spring-like contact structure of one electronic component for connecting to a terminal of another electronic component. The spring-like contact structure, also known as an inter-connector, generally requires a certain amount of contact force to effect reliable pressure contact to a terminal of an electronic component. Therefore, the shape and metallurgy of the inter-connector are important factors in determining the effectiveness of the inter-connector for making pressure connection to a terminal of the electronic component. Conventional methods of making such an inter-connector use lithographic and planarisation methods to “make” the inter-connectors in segments.

Abstract: A solder metal made of a eutectic or stoichiometric composition including at least two metallic or semiconducting elements is applied to a contact (of the semiconductor component, brought into contact with the metal layer of a metallized film and alloyed by heating into the metal layer of the film, thereby producing an electrically conductive connection having a higher melting point. A solder metal that is particularly suitable for such a purpose is the Bi22In78 (melting point 73° C.), Bi43Sn57, or In52Sn48, or BiIn, or BiIn2.

Abstract: A method for forming wafers having through-wafer vias for wafer-level packaging of devices, the method comprising the steps of depositing a metal layer on one of a first wafer and a second wafer; bonding the first wafer and the second wafer using the metal layer deposited on one of the first wafer and the second wafer; forming a through-wafer via in one of the first wafer and the second wafer; filling the through-wafer via with a conductive material; and forming a cavity in the one of the first wafer and the second wafer having the through-wafer via, wherein the cavity is superposable over a device.

Abstract: Method and apparatus for fluid-based cooling of heat-generating devices are disclosed. A heat-generating device is mounted on a carrier. The heat-generating device is spatially displaced from the surface of the carrier, thereby forming a channel. The heat-generating device and the carrier are enclosed in an enclosure having an inlet and an outlet. A substantially electrically non-conductive cooling fluid for introduction into the enclosure and into the channel and expulsion from the enclosure and for extracting heat from and thereby cooling the heat-generating device and the carrier.

Abstract: A soldering agent for use in diffusion soldering processes contains, in a soldering paste, a mixture of at least partially metallic grains of a high-melting metal and a solder metal. In a diffusion soldering process, the solder metal reacts completely with the high-melting metal and metals belonging to parts that are to be joined to one another by the soldering process, to form an intermetallic phase.

Abstract: A solder metal made of a eutectic or stoichiometric composition including at least two metallic or semiconducting elements is applied to a contact (of the semiconductor component, brought into contact with the metal layer of a metallized film and alloyed by heating into the metal layer of the film, thereby producing an electrically conductive connection having a higher melting point. A solder metal that is particularly suitable for such a purpose is the Bi22In78 (melting point 73° C.), Bi43Sn57, or In52Sn48, or BiIn, or BiIn2.

Abstract: The present invention relates to the structure and process of forming metal surfaces on the bare metal interconnect of a semiconductor chip. The metal chip comprises metal interconnect formed on a semiconductor substrate and at least a portion of the metal interconnect is exposed to the environment. In one aspect of the invention, the process comprises applying a noble metal on the exposed portion of the metal interconnect and performing a chemical process that causes a layer of the noble metal to convert into a bondable layer compatible with a conventional wire bonding. The process also comprises bonding a metal wire to the bondable layer.