Abstract: A fluid inlet assembly for a substrate processing apparatus includes a fluid inlet pipe configured to pass through a wall of a sealed pressure vessel, a resilient element around the fluid inlet pipe outside the sealed pressure vessel coupling the fluid inlet pipe to the wall, and first and second end parts, the resilient element being coupled therebetween.

Abstract: A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

Abstract: A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.

Abstract: A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.

Abstract: A substrate processing apparatus, includes a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

Abstract: A substrate holder 10 in the form of a mesh structure with a sample-receiving surface 10A is provided. The substrate holder 10 containing the samples 21 is at least partially folded and inserted into a substrate processing apparatus to produce coated samples 21A by directing at least one coating material P1, P2, . . . , Pn onto the samples through the mesh structure. A substrate processing system and a method for producing coated substrates are further provided.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.

Abstract: A substrate processing apparatus including an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

Abstract: A substrate holder 10 in the form of a mesh structure with a sample-receiving surface 10A is provided. The substrate holder 10 containing the samples 21 is at least partially folded and inserted into a substrate processing apparatus to produce coated samples 21A by directing at least one coating material P1, P2, . . . , Pn onto the samples through the mesh structure. A substrate processing system and a method for producing coated substrates are further provided.

Abstract: A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.