Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: An apparatus for growing thin films by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants, and outfeed means connected to the reaction space for discharging waste gases. At least one substrate is adapted into the reaction space and a second surface is also adapted into the reaction space in a disposition opposed to the surface of the substrate. The thin-film growth supporting surface of the substrate and the other surface disposed opposing the same are arranged in the reaction chamber so as to subtend an angle opening in the flow direction of the reactants in relation to the opposed surfaces. The distance between the opposed surfaces at the infeed end of reactants is smaller than at the gas outfeed end.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants used in the thin film growth process, and outfeed means connected to the reaction space for discharging excess reactants and gaseous reaction products from the reaction space. At least one substrate is adapted into the reaction space and a second surface is also adapted into the reaction space in a disposition opposed to the surface of the substrate. The thin-film growth supporting surface of the substrate and the other surface disposed opposing the same are arranged in the reaction chamber so as to subtend an angle opening in the flow direction of the reactants in relation to the opposed surfaces.

Abstract: An apparatus for growing thin films by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants, and outfeed means connected to the reaction space for discharging waste gases. At least one substrate is adapted into the reaction space and a second surface is also adapted into the reaction space in a disposition opposed to the surface of the substrate. The thin-film growth supporting surface of the substrate and the other surface disposed opposing the same are arranged in the reaction chamber so as to subtend an angle opening in the flow direction of the reactants in relation to the opposed surfaces. The distance between the opposed surfaces at the infeed end of reactants is smaller than at the gas outfeed end.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants used in the thin film growth process, and outfeed means connected to the reaction space for discharging excess reactants and gaseous reaction products from the reaction space. At least one substrate is adapted into the reaction space and a second surface is also adapted into the reaction space in a disposition opposed to the surface of the substrate. The thin-film growth supporting surface of the substrate and the other surface disposed opposing the same are arranged in the reaction chamber so as to subtend an angle opening in the flow direction of the reactants in relation to the opposed surfaces.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: Flushing operating means for a toilet or the like connected to a vacuum sewer, comprising flushing operating means such as a motor generating force by means of the vacuum of the sewer, a water valve, a sewer valve, and valve operating means for opening and closing of the water valve and the sewer valve when the toilet is to be drained and flushed. The flushing operating means is prior to the operating of said valves accumulating a sufficient amount of energy for a complete operating cycle of said motor and sewer valves.