Patents by Inventor Valentyn Solomko

Valentyn Solomko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11139813
    Abstract: An RF switch includes serially coupled RF cells coupled between a first switch node and a second switch node, wherein each of the serially coupled RF cells include at least one transistor; and a varactor circuit coupled to at least one node of a transistor in an RF cell, and coupled between the RF cell and an adjacent RF cell, wherein the varactor circuit is configured for equalizing a voltage of the RF cell and a voltage of the adjacent RF cell during an off mode of the RF switch.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: October 5, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Andrea Cattaneo, Valentyn Solomko
  • Patent number: 10931275
    Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: February 23, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
  • Publication number: 20210043497
    Abstract: A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.
    Type: Application
    Filed: June 17, 2020
    Publication date: February 11, 2021
    Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
  • Patent number: 10816581
    Abstract: A radio-frequency system includes an impedance tuning network having a plurality of selectable impedance states and a first port for coupling to a complex load impedance, a detector coupled to a second port of the impedance tuning network and configured to measure scalar values of reflection coefficients at the second port, and a controller configured to, for a first radio-frequency band, sequentially tune the impedance tuning network to at least three different impedance states in each of which the detector measures a scalar value of a corresponding reflection coefficient at the second port, and estimates a value of the complex load impedance based on the scalar values measured by the detector.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: October 27, 2020
    Assignee: Infineon Technologies AG
    Inventors: Valentyn Solomko, Ruediger Bauder, Anthony Thomas
  • Publication number: 20200321957
    Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
    Type: Application
    Filed: May 12, 2020
    Publication date: October 8, 2020
    Inventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
  • Patent number: 10778278
    Abstract: A device includes a switching unit including N input ports and M output ports, wherein N?M?2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: September 15, 2020
    Assignee: Infineon Technologies AG
    Inventors: Valentyn Solomko, Hans-Peter Friedrich, Michael Wilhelm
  • Patent number: 10734987
    Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: August 4, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
  • Patent number: 10680605
    Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: June 9, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Bernd Schleicher, Ruediger Bauder, Daniel Kehrer, Valentyn Solomko
  • Patent number: 10680599
    Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: June 9, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
  • Patent number: 10630196
    Abstract: According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion device, and the first conversion device comprising at least a first field-effect transistor element and a second field-effect transistor element, which is electrically coupled to the signal output region, the second field-effect transistor element being configured for series coupling to the first field-effect transistor element. According to this embodiment, the apparatus furthermore comprises at least one first capacitive element, which is electrically coupled to the signal input region, the first conversion device being configured in order to avoid at least one harmonic of the electromagnetic wave.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: April 21, 2020
    Assignee: Infineon Technologies AG
    Inventors: Viktor Gerber, Werner Simbuerger, Valentyn Solomko
  • Publication number: 20200088773
    Abstract: A radio-frequency system includes an impedance tuning network having a plurality of selectable impedance states and a first port for coupling to a complex load impedance, a detector coupled to a second port of the impedance tuning network and configured to measure scalar values of reflection coefficients at the second port, and a controller configured to, for a first radio-frequency band, sequentially tune the impedance tuning network to at least three different impedance states in each of which the detector measures a scalar value of a corresponding reflection coefficient at the second port, and estimates a value of the complex load impedance based on the scalar values measured by the detector.
    Type: Application
    Filed: September 17, 2018
    Publication date: March 19, 2020
    Inventors: Valentyn Solomko, Ruediger Bauder, Anthony Thomas
  • Publication number: 20200028504
    Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.
    Type: Application
    Filed: July 9, 2019
    Publication date: January 23, 2020
    Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
  • Publication number: 20190273527
    Abstract: A device includes a switching unit including N input ports and M output ports, wherein N?M?2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 5, 2019
    Inventors: Valentyn Solomko, Hans-Peter Friedrich, Michael Wilhelm
  • Publication number: 20190267990
    Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell
    Type: Application
    Filed: February 28, 2018
    Publication date: August 29, 2019
    Inventors: Bernd Schleicher, Ruediger Bauder, Daniel Kehrer, Valentyn Solomko
  • Publication number: 20190245533
    Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko
  • Patent number: 10361696
    Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: July 23, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko
  • Patent number: 10333578
    Abstract: A device includes a switching unit including N input ports and M output ports, wherein N?M?2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: June 25, 2019
    Assignee: Infineon Technologies AG
    Inventors: Valentyn Solomko, Hans-Peter Friedrich, Michael Wilhelm
  • Patent number: 10333510
    Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: June 25, 2019
    Assignee: INFINEON TEHCNOLOGIES AG
    Inventors: Valentyn Solomko, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher, Anton Steltenpohl, Hans Taddiken, Danial Tayari
  • Patent number: 10304780
    Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: May 28, 2019
    Assignee: Infineon Technologies AG
    Inventors: Chau Fatt Chiang, Kok Yau Chua, Swee Kah Lee, Chee Yang Ng, Valentyn Solomko
  • Patent number: 10250251
    Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: April 2, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko