Patents by Inventor Valentyn Solomko
Valentyn Solomko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10734987Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.Type: GrantFiled: July 9, 2019Date of Patent: August 4, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
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Patent number: 10680605Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell.Type: GrantFiled: February 28, 2018Date of Patent: June 9, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Bernd Schleicher, Ruediger Bauder, Daniel Kehrer, Valentyn Solomko
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Patent number: 10680599Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.Type: GrantFiled: April 3, 2019Date of Patent: June 9, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
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Patent number: 10630196Abstract: According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion device, and the first conversion device comprising at least a first field-effect transistor element and a second field-effect transistor element, which is electrically coupled to the signal output region, the second field-effect transistor element being configured for series coupling to the first field-effect transistor element. According to this embodiment, the apparatus furthermore comprises at least one first capacitive element, which is electrically coupled to the signal input region, the first conversion device being configured in order to avoid at least one harmonic of the electromagnetic wave.Type: GrantFiled: July 27, 2017Date of Patent: April 21, 2020Assignee: Infineon Technologies AGInventors: Viktor Gerber, Werner Simbuerger, Valentyn Solomko
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Publication number: 20200088773Abstract: A radio-frequency system includes an impedance tuning network having a plurality of selectable impedance states and a first port for coupling to a complex load impedance, a detector coupled to a second port of the impedance tuning network and configured to measure scalar values of reflection coefficients at the second port, and a controller configured to, for a first radio-frequency band, sequentially tune the impedance tuning network to at least three different impedance states in each of which the detector measures a scalar value of a corresponding reflection coefficient at the second port, and estimates a value of the complex load impedance based on the scalar values measured by the detector.Type: ApplicationFiled: September 17, 2018Publication date: March 19, 2020Inventors: Valentyn Solomko, Ruediger Bauder, Anthony Thomas
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Publication number: 20200028504Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.Type: ApplicationFiled: July 9, 2019Publication date: January 23, 2020Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
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Publication number: 20190273527Abstract: A device includes a switching unit including N input ports and M output ports, wherein N?M?2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.Type: ApplicationFiled: May 16, 2019Publication date: September 5, 2019Inventors: Valentyn Solomko, Hans-Peter Friedrich, Michael Wilhelm
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Publication number: 20190267990Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cellType: ApplicationFiled: February 28, 2018Publication date: August 29, 2019Inventors: Bernd Schleicher, Ruediger Bauder, Daniel Kehrer, Valentyn Solomko
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Publication number: 20190245533Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.Type: ApplicationFiled: January 31, 2019Publication date: August 8, 2019Inventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko
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Patent number: 10361696Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.Type: GrantFiled: January 31, 2019Date of Patent: July 23, 2019Assignee: INFINEON TECHNOLOGIES AGInventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko
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Patent number: 10333510Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.Type: GrantFiled: July 7, 2017Date of Patent: June 25, 2019Assignee: INFINEON TEHCNOLOGIES AGInventors: Valentyn Solomko, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher, Anton Steltenpohl, Hans Taddiken, Danial Tayari
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Patent number: 10333578Abstract: A device includes a switching unit including N input ports and M output ports, wherein N?M?2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.Type: GrantFiled: February 28, 2017Date of Patent: June 25, 2019Assignee: Infineon Technologies AGInventors: Valentyn Solomko, Hans-Peter Friedrich, Michael Wilhelm
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Patent number: 10304780Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.Type: GrantFiled: July 2, 2018Date of Patent: May 28, 2019Assignee: Infineon Technologies AGInventors: Chau Fatt Chiang, Kok Yau Chua, Swee Kah Lee, Chee Yang Ng, Valentyn Solomko
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Patent number: 10250251Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.Type: GrantFiled: February 7, 2018Date of Patent: April 2, 2019Assignee: INFINEON TECHNOLOGIES AGInventors: Bernd Schleicher, Winfried Bakalski, Ruediger Bauder, Valentyn Solomko
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Publication number: 20190013806Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.Type: ApplicationFiled: July 7, 2017Publication date: January 10, 2019Inventors: Valentyn Solomko, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher, Anton Steltenpohl, Hans Taddiken, Danial Tayari
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Patent number: 10170822Abstract: According to one embodiment, a communication device is described comprising an antenna, a signal path for supplying a signal to the antenna, two directional couplers arranged within the signal path, wherein each directional coupler is coupled to an adjustable impedance defining the characteristic impedance of the directional coupler, a controller configured to set, for each of a plurality of impedances, the adjustable impedances of the directional couplers to the impedance, a return loss measurement circuit configured to determine, for each of the plurality of impedances, a return loss of the signal path when the adjustable impedances of the directional couplers are set to the impedance and a load impedance determination circuit configured to determine a load impedance of the signal path based on the determined return losses.Type: GrantFiled: June 1, 2017Date of Patent: January 1, 2019Assignee: Infineon Technologies AGInventors: Valentyn Solomko, Anthony Thomas, Winfried Bakalski, Ruediger Bauder
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Patent number: 10163812Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.Type: GrantFiled: October 19, 2016Date of Patent: December 25, 2018Assignee: Infineon Technologies AGInventors: Chau Fatt Chiang, Kok Yau Chua, Swee Kah Lee, Chee Yang Ng, Valentyn Solomko
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Publication number: 20180308804Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.Type: ApplicationFiled: July 2, 2018Publication date: October 25, 2018Applicant: Infineon Technologies AGInventors: Chau Fatt Chiang, Kok Yau Chua, Swee Kah Lee, Chee Yang NG, Valentyn Solomko
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Publication number: 20180108616Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.Type: ApplicationFiled: October 19, 2016Publication date: April 19, 2018Applicant: Infineon Technologies AGInventors: Chau Fatt Chiang, Kok Yau Chua, Swee Kah Lee, Chee Yang NG, Valentyn Solomko
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Patent number: 9947985Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.Type: GrantFiled: July 20, 2015Date of Patent: April 17, 2018Assignee: Infineon Technologies AGInventors: Valentyn Solomko, Winfried Bakalski, Nikolay Ilkov