Patents by Inventor Vasile Paraschiv
Vasile Paraschiv has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160224604Abstract: The creation and updating of an association index that defines a linking between a child table and a parent table in a database system, and in which each of at least some of the parent table rows have an associated expression defining rules for mapping child table rows to the associated parent table row. The association index may be constructed with one pass of the parent table by evaluating the mapping definition to identifying associated child table rows. If there are such associations for a given parent table row, the linking module may record that association in an association index. If there are changes made that potentially invalidate an association status (whether an association or lack thereof), a re-evaluation module then determines which mapping definitions for which parent rows need to be re-evaluated, and potentially for which child table rows, rather than perform the entire process again.Type: ApplicationFiled: February 4, 2015Publication date: August 4, 2016Inventors: Cristian Petculescu, Marius Dumitru, Vasile Paraschiv, Amir Netz
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Publication number: 20160224602Abstract: A computer-navigable trie structure used in order to represent predicates for matching foreign keys to primary rows in a primary table. The predicates may be wide ranging, and each may be represented by a corresponding descendant path of the trie structure, and defines which foreign keys are to be mapped to the particular row. The trie structure is built by incrementally augmenting the trie structure as each predicate is analyzed. During later use of the trie structure, each foreign key that is a candidate for mapping to one or more parent rows are evaluated. The foreign key is used to navigate through a set of one or more descendant paths of the computer-navigable trie structure. Matching parent rows may then be identified based on the identity of the navigated descendant paths. The foreign key may then be mapped to each of the one or more matching parent rows.Type: ApplicationFiled: January 30, 2015Publication date: August 4, 2016Inventors: Cristian Petculescu, Marius Dumitru, Vasile Paraschiv, Amir Netz
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Publication number: 20160049310Abstract: A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure.Type: ApplicationFiled: August 17, 2015Publication date: February 18, 2016Applicant: IMEC VZWInventors: Eddy Kunnen, Vasile Paraschiv
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Publication number: 20150379085Abstract: Linking of a child table to a parent table in a database system. For a given parent table row, an expression associated with the particular row is identified. The expression may be a semantic expression that comprises something different than or more than an equals expression or a contains expression. The expression might also take as input a field of the parent table other than the primary key of the parent table. For each of multiple (and potentially all) rows of a child table, the expression is evaluated against a foreign key of the corresponding row of the child table. If the foreign key matches the expression, an association is created, and perhaps saved, between the foreign key and the particular row of the parent table. The expressions may differ even down to the granularity of a single row in the parent table, thereby enabling perhaps custom per-row expressions.Type: ApplicationFiled: June 27, 2014Publication date: December 31, 2015Inventors: Cristian Petculescu, Marius Dumitru, Vasile Paraschiv, Amir Netz, Paul Jonathon Sanders
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Patent number: 9137325Abstract: Embodiments are directed to efficiently routing data requests from a plurality of tenants and to using smart routing to limit service denials. In an embodiment, a gateway node receives data requests from a tenant subscriber requesting data for an indicated service. The gateway node determines which server node the received data requests are to be routed to. The determination evaluates various criteria associated with the data request. The gateway node queries the determined server node to determine the health of the server nodes and receives a reply from the determined server node indicating the server node's current operating status. The gateway node also, based on the determined server node's reply, routes the received data requests to the determined server node, according to the evaluated criteria.Type: GrantFiled: February 11, 2011Date of Patent: September 15, 2015Assignee: Microsoft Technology Licensing, LLCInventors: Siva Muhunthan, Vasile Paraschiv, Yunxin Wu, Lev Novik
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Publication number: 20150120730Abstract: Storing text samples in a manner that the text samples may be quickly searched. The text samples are assigned a text sample identifier and are each parsed to thereby extract text components from the text samples. Text components that have the same content are assigned the same text component identifier. For each parsed text component, a text component entry is created that includes the assigned text component identifier as well as the text sample identifier for the text sample from which the text component was parsed. A text sample entry group is created for each text sample that contains the text component entries in sequence for the text components found within the text sample. The text sample entry groups are stored so as to be scannable during a future search.Type: ApplicationFiled: October 29, 2013Publication date: April 30, 2015Applicant: MICROSOFT CORPORATIONInventors: Cristian Petculescu, Marius Dumitru, Vasile Paraschiv, Amir Netz, Paul Jonathon Sanders
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Publication number: 20150064889Abstract: The present disclosure is related to a method for implanting dopant elements in a structure comprising a plurality of semiconductor fins separated by field dielectric areas. The method includes depositing an etch stop layer on the fins, depositing a BARC layer on the etch stop layer, depositing a resist layer on the BARC layer, removing a portion of the resist layer by lithography steps to thereby expose an area of the BARC layer, removing the BARC layer in the exposed area by a dry etch process using the remaining resist layer as a mask, implanting dopant elements into the fins present in the area, using the BARC and resist layers as a mask, and removing the remainder of the resist and BARC layers.Type: ApplicationFiled: August 27, 2014Publication date: March 5, 2015Applicant: IMEC VZWInventors: Vasile Paraschiv, Gustaf Winroth, Efrain Altamirano Sanchez, Sabrina Locorotondo, Raja Athimulam
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Publication number: 20150021726Abstract: The disclosed technology generally relates to methods of fabricating magnetic memory devices, and more particularly to methods of forming a magnetic tunnel junction (MTJ) stack. In one aspect, a method of forming the MTJ includes providing an MTJ material stack comprising a ferromagnetic material and forming thereon a protective mask layer to cover an active area of the MTJ material stack. The method additionally includes incorporating a glass-forming element into exposed portions of the ferromagnetic material. The method additionally includes at least partially amorphizing the exposed portions of the ferromagnetic material, wherein at least partially amorphizing transforms the exposed portions of the ferromagnetic material into an electrical insulator.Type: ApplicationFiled: July 16, 2014Publication date: January 22, 2015Inventors: Tai Min, Vasile PARASCHIV, Werner BOULLART, Mihaela loana POPOVICI
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Publication number: 20130001505Abstract: A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may form a planar structure and may not form a vertically structure.Type: ApplicationFiled: September 7, 2012Publication date: January 3, 2013Applicant: NXP B.V.Inventors: Romain Delhougne, Judit Gloria Lisoni, Vasile Paraschiv
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Patent number: 8263471Abstract: A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may form a planar structure and may not form a vertically structure.Type: GrantFiled: January 12, 2009Date of Patent: September 11, 2012Assignee: NXP B.V.Inventors: Romain Delhougne, Judit Lisoni, Vasile Paraschiv
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Publication number: 20120210017Abstract: Embodiments are directed to efficiently routing data requests from a plurality of tenants and to using smart routing to limit service denials. In an embodiment, a gateway node receives data requests from a tenant subscriber requesting data for an indicated service. The gateway node determines which server node the received data requests are to be routed to. The determination evaluates various criteria associated with the data request. The gateway node queries the determined server node to determine the health of the server nodes and receives a reply from the determined server node indicating the server node's current operating status. The gateway node also, based on the determined server node's reply, routes the received data requests to the determined server node, according to the evaluated criteria.Type: ApplicationFiled: February 11, 2011Publication date: August 16, 2012Applicant: MICROSOFT CORPORATIONInventors: Siva Muhunthan, Vasile Paraschiv, Yunxin Wu, Lev Novik
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Publication number: 20100276657Abstract: A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first 5 patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may forma planar structure and may not form a vertically structure.Type: ApplicationFiled: January 12, 2009Publication date: November 4, 2010Applicant: NXP B.V.Inventors: Romain Delhougne, Judit Lisoni, Vasile Paraschiv
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Patent number: 7598184Abstract: A method for the selective removal of a high-k layer such as HfO2 over silicon or silicon dioxide is provided. More specifically, a method for etching high-k selectively over silicon and silicon dioxide and a plasma composition for performing the selective etch process is provided. Using a BCl3 plasma with well defined concentrations of nitrogen makes it possible to etch high-k with at a reasonable etch rate while silicon and silicon dioxide have an etch rate of almost zero. The BCl3 comprising plasmas have preferred additions of 10 up to 13% nitrogen. Adding a well defined concentration of nitrogen to the BCl3/N2 plasma gives the unexpected deposition of a Boron-Nitrogen (BxNy) comprising film onto the silicon and silicon dioxide which is not deposited onto the high-k material. Due to the deposition of the Boron-Nitrogen (BxNy) comprising film, the etch rate of silicon and silicon dioxide is dropped down to zero.Type: GrantFiled: October 24, 2006Date of Patent: October 6, 2009Assignee: IMECInventors: Denis Shamiryan, Vasile Paraschiv, Marc Demand
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Patent number: 7521369Abstract: A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k material in gate stacks of a semiconductor device. The selective removal and etch of this high-k material is very difficult since Dy and Sc (and their oxides) are difficult to etch. The etching could however be easily stopped on them. For patterning of the metal gates comprising TiN and TaN on top of rare earth based high-k layer a chlorine-containing gases (Cl2 and BCl3) can be used since titanium ant tantalum chlorides are volatile and reasonable selectivity to other material present on the wafer (Si, SiO2) can be obtained. The Dy and Sc chlorides are not volatile, but they are water soluble.Type: GrantFiled: October 22, 2007Date of Patent: April 21, 2009Assignee: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Denis Shamiryan, Marc Demand, Vasile Paraschiv
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Patent number: 7390708Abstract: A method is provided for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically the element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates to the dry etching of silicon and/or germanium comprising structures (e.g. gates) doped with a Lanthanide e.g. Ytterbium (Yb doped gates). In case the silicon and/or germanium comprising structure is a gate electrode the silicon and/or germanium is doped with a Lanthanide (e.g. Yb) for modeling the work function of a gate electrode.Type: GrantFiled: October 22, 2007Date of Patent: June 24, 2008Assignee: Interuniversitair Microelektronica Centrum (IMEC) vzwInventors: Marc Demand, Denis Shamiryan, Vasile Paraschiv
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Publication number: 20080096374Abstract: A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k material in gate stacks of a semiconductor device. The selective removal and etch of this high-k material is very difficult since Dy and Sc (and their oxides) are difficult to etch. The etching could however be easily stopped on them. For patterning of the metal gates comprising TiN and TaN on top of rare earth based high-k layer a chlorine-containing gases (Cl2 and BCl3) can be used since titanium ant tantalum chlorides are volatile and reasonable selectivity to other material present on the wafer (Si, SiO2) can be obtained. The Dy and Sc chlorides are not volatile, but they are water soluble.Type: ApplicationFiled: October 22, 2007Publication date: April 24, 2008Applicant: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Denis Shamiryan, Marc Demand, Vasile Paraschiv
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Publication number: 20080096372Abstract: A method is provided for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically the element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates to the dry etching of silicon and/or germanium comprising structures (e.g. gates) doped with a Lanthanide e.g. Ytterbium (Yb doped gates). In case the silicon and/or germanium comprising structure is a gate electrode the silicon and/or germanium is doped with a Lanthanide (e.g. Yb) for modeling the work function of a gate electrode.Type: ApplicationFiled: October 22, 2007Publication date: April 24, 2008Applicant: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Marc Demand, Denis Shamiryan, Vasile Paraschiv
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Publication number: 20070099428Abstract: A plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma are provided. Small amounts of nitrogen (5% up to 10%) can be added to a BCl3 comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.Type: ApplicationFiled: October 5, 2006Publication date: May 3, 2007Inventors: Denis Shamiryan, Vasile Paraschiv, Marc Demand, Werner Boullart
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Publication number: 20070099403Abstract: A method for the selective removal of a high-k layer such as HfO2 over silicon or silicon dioxide is provided. More specifically, a method for etching high-k selectively over silicon and silicon dioxide and a plasma composition for performing the selective etch process is provided. Using a BCl3 plasma with well defined concentrations of nitrogen makes it possible to etch high-k with at a reasonable etch rate while silicon and silicon dioxide have an etch rate of almost zero. The BCl3 comprising plasmas have preferred additions of 10 up to 13% nitrogen. Adding a well defined concentration of nitrogen to the BCl3/N2 plasma gives the unexpected deposition of a Boron-Nitrogen (BxNy) comprising film onto the silicon and silicon dioxide which is not deposited onto the high-k material. Due to the deposition of the Boron-Nitrogen (BxNy) comprising film, the etch rate of silicon and silicon dioxide is dropped down to zero.Type: ApplicationFiled: October 24, 2006Publication date: May 3, 2007Inventors: Denis Shamiryan, Vasile Paraschiv, Marc Demand
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Patent number: 7132370Abstract: The present invention relates to a method for selectively removing a high-k material comprising providing a high-k material on a semiconductor substrate, and contacting the high-k material with a solution comprising HF, an organic compound, and an inorganic acid.Type: GrantFiled: March 9, 2004Date of Patent: November 7, 2006Assignee: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Vasile Paraschiv, Martine Claes