Patents by Inventor Venkata Sharat Chandra PARIMI

Venkata Sharat Chandra PARIMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984305
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Grant
    Filed: January 2, 2023
    Date of Patent: May 14, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Viren Kalsekar, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi
  • Patent number: 11862475
    Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: January 2, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Fang Ruan, Diwakar Kedlaya, Amit Bansal, Venkata Sharat Chandra Parimi, Rajaram Narayanan, Badri N. Ramamurthi, Sherry L. Mings, Job George Konnoth Joseph, Rupankar Choudhury
  • Patent number: 11830706
    Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: November 28, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Zubin Huang, Jian Li, Satish Radhakrishnan, Rui Cheng, Diwakar N. Kedlaya, Juan Carlos Rocha-Alvarez, Umesh M. Kelkar, Karthik Janakiraman, Sarah Michelle Bobek, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Byung Seok Kwon
  • Patent number: 11821082
    Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: November 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Xiaoquan Min, Byung Ik Song, Hyung Je Woo, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Lee
  • Patent number: 11804363
    Abstract: Exemplary semiconductor processing chambers may include an inlet manifold defining a central aperture. The inlet manifold may also define a first channel and a second channel, and each of the channels may extend through the inlet manifold radially outward of the central aperture. The chambers may also include a gasbox characterized by a first surface facing the inlet manifold and a second surface opposite the first. The gasbox may define a central aperture aligned with the central aperture of the inlet manifold. The gasbox may define a first annular channel in the first surface extending about the central aperture of the gasbox and fluidly coupled with the first channel of the inlet manifold. The gasbox may define a second annular channel extending radially outward of the first and fluidly coupled with the second channel of the inlet manifold. The second annular channel may be fluidly isolated from the first.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: October 31, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Fang Ruan, Diwakar Kedlaya, Truong Van Nguyen, Mingle Tong, Sherry L. Mings, Venkata Sharat Chandra Parimi
  • Publication number: 20230298922
    Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.
    Type: Application
    Filed: May 23, 2023
    Publication date: September 21, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Abdul Aziz KHAJA, Venkata Sharat Chandra PARIMI, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR
  • Publication number: 20230203659
    Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
    Type: Application
    Filed: February 20, 2023
    Publication date: June 29, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle BOBEK, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR, Kwangduk Douglas LEE, Sungwon HA, Jian LI
  • Patent number: 11682574
    Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: June 20, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Venkata Sharat Chandra Parimi, Sarah Michelle Bobek, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar
  • Patent number: 11682544
    Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: June 20, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Diwakar Kedlaya, Fang Ruan, Amit Bansal
  • Publication number: 20230147452
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Application
    Filed: January 2, 2023
    Publication date: May 11, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Viren KALSEKAR, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI
  • Patent number: 11600470
    Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: March 7, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Xiaoquan Min, Sarah Michelle Bobek, Sungwon Ha, Prashant Kumar Kulshreshtha, Vinay Prabhakar
  • Patent number: 11584994
    Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Kwangduk Douglas Lee, Sungwon Ha, Jian Li
  • Patent number: 11587773
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Viren Kalsekar, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi
  • Patent number: 11515129
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Patent number: 11495483
    Abstract: Exemplary substrate support assemblies include an electrostatic chuck body defining a substrate platform. The substrate platform may be characterized by an upper surface. The platform may define a purge aperture. The platform may include a plurality of mesas that are disposed in an inner region of the upper surface. Each of the mesas may protrude upward from the upper surface. The platform may include a sealing band that extends upward from the upper surface in a circumferential pattern and partially encircles the inner region of the upper surface. Top surfaces of the mesas and sealing band may form a support surface for a substrate. The sealing band may define a number of gaps. The assemblies may include a support stem coupled with the electrostatic chuck body, a heater embedded within the electrostatic chuck body, and a backside gas source that is coupled with the purge aperture of the support surface.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Diwakar Kedlaya
  • Publication number: 20220199373
    Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.
    Type: Application
    Filed: December 18, 2020
    Publication date: June 23, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Zubin Huang, Manjunath Veerappa Chobari Patil, Nitin Pathak, Yi Yang, Badri N. Ramamurthi, Truong Van Nguyen, Rui Cheng, Diwakar Kedlaya
  • Publication number: 20220130650
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Sungwon Ha, Kwangduk Douglas Lee
  • Publication number: 20220122851
    Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Fang Ruan, Diwakar Kedlaya, Amit Bansal, Venkata Sharat Chandra Parimi, Rajaram Narayanan, Badri N. Ramamurthi, Sherry L. Mings, Job George Konnoth Joseph, Rupankar Choudhury
  • Publication number: 20220122870
    Abstract: Exemplary substrate support assemblies include an electrostatic chuck body defining a substrate platform. The substrate platform may be characterized by an upper surface. The platform may define a purge aperture. The platform may include a plurality of mesas that are disposed in an inner region of the upper surface. Each of the mesas may protrude upward from the upper surface. The platform may include a sealing band that extends upward from the upper surface in a circumferential pattern and partially encircles the inner region of the upper surface. Top surfaces of the mesas and sealing band may form a support surface for a substrate. The sealing band may define a number of gaps. The assemblies may include a support stem coupled with the electrostatic chuck body, a heater embedded within the electrostatic chuck body, and a backside gas source that is coupled with the purge aperture of the support surface.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Diwakar Kedlaya
  • Publication number: 20220122822
    Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.
    Type: Application
    Filed: October 21, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Diwakar Kedlaya, Fang Ruan, Amit Bansal