Patents by Inventor Venkata Sharat Chandra PARIMI

Venkata Sharat Chandra PARIMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515129
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Patent number: 11495483
    Abstract: Exemplary substrate support assemblies include an electrostatic chuck body defining a substrate platform. The substrate platform may be characterized by an upper surface. The platform may define a purge aperture. The platform may include a plurality of mesas that are disposed in an inner region of the upper surface. Each of the mesas may protrude upward from the upper surface. The platform may include a sealing band that extends upward from the upper surface in a circumferential pattern and partially encircles the inner region of the upper surface. Top surfaces of the mesas and sealing band may form a support surface for a substrate. The sealing band may define a number of gaps. The assemblies may include a support stem coupled with the electrostatic chuck body, a heater embedded within the electrostatic chuck body, and a backside gas source that is coupled with the purge aperture of the support surface.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Diwakar Kedlaya
  • Publication number: 20220199373
    Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.
    Type: Application
    Filed: December 18, 2020
    Publication date: June 23, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Zubin Huang, Manjunath Veerappa Chobari Patil, Nitin Pathak, Yi Yang, Badri N. Ramamurthi, Truong Van Nguyen, Rui Cheng, Diwakar Kedlaya
  • Publication number: 20220130650
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Sungwon Ha, Kwangduk Douglas Lee
  • Publication number: 20220122870
    Abstract: Exemplary substrate support assemblies include an electrostatic chuck body defining a substrate platform. The substrate platform may be characterized by an upper surface. The platform may define a purge aperture. The platform may include a plurality of mesas that are disposed in an inner region of the upper surface. Each of the mesas may protrude upward from the upper surface. The platform may include a sealing band that extends upward from the upper surface in a circumferential pattern and partially encircles the inner region of the upper surface. Top surfaces of the mesas and sealing band may form a support surface for a substrate. The sealing band may define a number of gaps. The assemblies may include a support stem coupled with the electrostatic chuck body, a heater embedded within the electrostatic chuck body, and a backside gas source that is coupled with the purge aperture of the support surface.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Diwakar Kedlaya
  • Publication number: 20220122822
    Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.
    Type: Application
    Filed: October 21, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Diwakar Kedlaya, Fang Ruan, Amit Bansal
  • Publication number: 20220122851
    Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Fang Ruan, Diwakar Kedlaya, Amit Bansal, Venkata Sharat Chandra Parimi, Rajaram Narayanan, Badri N. Ramamurthi, Sherry L. Mings, Job George Konnoth Joseph, Rupankar Choudhury
  • Publication number: 20220108891
    Abstract: Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.
    Type: Application
    Filed: October 6, 2020
    Publication date: April 7, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Zubin Huang, Manjunath Veerappa Chobari Patil, Diwakar Kedlaya, Truong Van Nguyen, Pavan Kumar Murali Kumar, Subrahmanyam Veerisetty, Venkata Sharat Chandra Parimi, Fang Ruan
  • Publication number: 20220020612
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Sungwon Ha, Runyun Pan
  • Publication number: 20210287924
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assembly may include a ceramic material characterized by a grain size of less than or about 5 ?m.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Paul L. Brillhart, Juan Carlos Rocha-Alvarez, Abdul Aziz Khaja, Vinay K. Prabhakar, Kwangduk Douglas Lee, Chidambara A. Ramalingam, Venkata Sharat Chandra Parimi
  • Publication number: 20210202218
    Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 1, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Xiaoquan Min, Sarah Michelle Bobek, Sungwon Ha, Prashant Kumar Kulshreshtha, Vinay Prabhakar
  • Publication number: 20210166921
    Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
    Type: Application
    Filed: December 3, 2019
    Publication date: June 3, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Elizabeth Neville, Satish Radhakrishnan, Kartik Shah, Vinay Prabhakar, Venkata Sharat Chandra Parimi, Sungwon Ha
  • Publication number: 20210159048
    Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.
    Type: Application
    Filed: November 25, 2019
    Publication date: May 27, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Xiaoquan Min, Zheng John Ye, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Lu Xu, Kwangduk Douglas Lee
  • Publication number: 20210142984
    Abstract: Exemplary semiconductor processing chambers may include an inlet manifold defining a central aperture. The inlet manifold may also define a first channel and a second channel, and each of the channels may extend through the inlet manifold radially outward of the central aperture. The chambers may also include a gasbox characterized by a first surface facing the inlet manifold and a second surface opposite the first. The gasbox may define a central aperture aligned with the central aperture of the inlet manifold. The gasbox may define a first annular channel in the first surface extending about the central aperture of the gasbox and fluidly coupled with the first channel of the inlet manifold. The gasbox may define a second annular channel extending radially outward of the first and fluidly coupled with the second channel of the inlet manifold. The second annular channel may be fluidly isolated from the first.
    Type: Application
    Filed: November 4, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Fang Ruan, Diwakar Kedlaya, Truong Van Nguyen, Mingle Tong, Sherry L. Mings, Venkata Sharat Chandra Parimi
  • Publication number: 20210143010
    Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.
    Type: Application
    Filed: November 11, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Xiaoquan Min, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Lee
  • Publication number: 20210130949
    Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.
    Type: Application
    Filed: October 27, 2020
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Xiaoquan Min, Byung Ik Song, Hyung Je Woo, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Lee
  • Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Publication number: 20200373132
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Application
    Filed: March 10, 2020
    Publication date: November 26, 2020
    Inventors: Viren KALSEKAR, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI
  • Publication number: 20200328063
    Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.
    Type: Application
    Filed: April 14, 2020
    Publication date: October 15, 2020
    Inventors: Sarah Michelle BOBEK, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE
  • Publication number: 20200249263
    Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.
    Type: Application
    Filed: January 21, 2020
    Publication date: August 6, 2020
    Inventors: Lu XU, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Byung Seok KWON, Venkata Sharat Chandra PARIMI, Kwangduk Douglas LEE, Juan Carlos ROCHA-ALVAREZ