Abstract: A sequential circuit arrangement and method are provided in which a latch input signal and a latched version of the input signal are compared to derive a difference signal. This difference signal can detect when changes in the input are not propagated to the output. A second logic gate arrangement derives an error signal from the product of difference signal and a delayed version of the difference signal. This means that normal operation of the circuit is not detected as an error—only when the latched output fails to follow the input after the normally expected delay is the error signal created. The latch element output or an inverted version of the latch element output is selected in dependence on the error signal.

Abstract: A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Abstract: A tuneable buffer circuit for use in a clock tree has multiple buffers in parallel, each buffer having a grounding function, and also a bypass switch in parallel with the buffers. The circuit has a normal mode of one buffer connected into circuit, a first low voltage mode of multiple buffers connected into circuit in parallel without grounding function, a second low voltage mode of the buffers connected into circuit in parallel with grounding function and a bypass mode.

Abstract: A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Abstract: A textual analysis system is configured to compare textual content of textual statements. The textual analysis system is configured to score the textual content of a first textual statement and a second textual statement. Based on the score, the textual analysis system may determine a level of correspondence between the first textual statement and the second textual statement. The textual analysis system is configured to generate an interactive visual representation of the correspondence levels between the first statement and the second statement. The visual representation may be transmitted to a display.

Abstract: Anti-wear and/or friction reducing formulations that include a mixture of at least one first ionic liquid and at least one ashless antiwear compound. The ashless antiwear compound can be a second ionic liquid or an ashless thiophosphate compound. The formulation desirably provides synergistic anti-wear and/or friction reducing properties. The first IL can be a monocationie ionic liquid or a dicationic ionic liquid. The second IL is a dicationic ionic liquid. The ashless thiophosphate is desirably a thiophosphate, such as a fluorothiophosphate (FTP), an alkylphosphorofluoridothiolate, or an alkylthioperoxydithiophosphate. Antiwear and/or friction reduction formulations comprising the above mixtures diluted up to 25% by weight in a base oil.

Abstract: A textual analysis system is configured to compare textual content of textual statements. The textual analysis system is configured to score the textual content of a first textual statement and a second textual statement. Based on the score, the textual analysis system may determine a level of correspondence between the first textual statement and the second textual statement. The textual analysis system is configured to generate an interactive visual representation of the correspondence levels between the first statement and the second statement. The visual representation may be transmitted to a display.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: A method for improving writability of an SRAM cell is disclosed. In one aspect, the method includes applying a first voltage higher than the global ground voltage and a third voltage higher than the global supply voltage to the ground supply nodes of the invertors of the SRAM cell, pre-charging one of the complementary bitlines to the global ground voltage, and applying a second voltage higher than the global supply voltage to the access transistors during a write operation to the SRAM cell.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: A semiconductor memory device is disclosed. In one aspect, the device includes memory blocks with memory cells connected to a local bit-line, each local bit-line being connectable to a global bit-line for memory readout. There are also pre-charging circuitry for pre-charging the bit-lines and a read buffer for discharging the global bit-line during a read operation. The local bit-lines are pre-charged to a predetermined first voltage substantially lower than the supply voltage (VDD) of the memory device. A segment buffer is provided between each local bit-line and an input node of the respective read buffer. The segment buffer activates the read buffer during the read operation upon occurrence of a discharge on the connected local bit-line.

Abstract: A memory circuit with multi-sized sense amplifier redundancy is disclosed. In one aspect, the circuit includes sense amplifiers connected to differential bit-lines and configured to amplify a voltage difference sensed on the differential bit-lines. The sense amplifiers include a first set of smaller sense amplifiers and a second set of larger sense amplifiers redundantly arranged to the first set to form redundant groups which each contain one smaller sense amplifiers and one larger sense amplifiers. The larger sense amplifiers have a failure rate lower than the smaller sense amplifiers. The circuit also includes calibration circuitry connected to enable and disable nodes of each of the sense amplifiers and configured to select for each redundant group either the smaller sense amplifier of the first set or, if the smaller sense amplifier fails, the larger sense amplifier of the second set.