Abstract: A vertical pair of complementary, bipolar transistors is disclosed which includes a semiconductor substrate of one conductivity type and a pair of dielectric isolation regions disposed in contiguous relationship with the substrate. An injector region of opposite conductivity type is disposed between the pair of isolation regions. A pair of heavily doped, polycrystalline, semiconductor regions of the one conductivity type is disposed over and in registry with the pair of isolation regions. Similarly, a single crystal, semiconductor region of the one conductivity type is disposed over and in registry with the injector region. Finally, a first zone of opposite conductivity type is disposed in the single crystal region and a second zone of the one conductivity type is disposed in the first zone.

Abstract: A silicon substrate adapted for large scale integrated electronic circuits upon a lower surface has its upper surface coated with a highly porous heat sink film. The film is composed of a porous metal, preferably aluminum, formed by vacuum deposition (evaporation or sputtering) at a high pressure of an inactive gas. The gas can have a pressure of from about 0.5-100 millitorr, and a suitable gas is argon. A porous aluminum film with interconnected nucleation sites which are in the form of reservoir type cavities is manufactured on a silicon surface. The cavities tend to trap vapor of a liquid coolant in contact with the thin film contained in a package enclosing the substrate and its integrated circuit. Cooling fins can be used to cool the coolant.

Abstract: A vertical pair of complementary, bipolar transistors is disclosed which includes a semiconductor substrate of one conductivity type and a pair of dielectric isolation regions disposed in contiguous relationship with the substrate. An injector region of opposite conductivity type is disposed between the pair of isolation regions. A pair of heavily doped, polycrystalline, semiconductor regions of the one conductivity type is disposed over and in registry with the pair of isolation regions. Similarly, a single crystal, semiconductor region of the one conductivity type is disposed over and in registry with the injector region. Finally, a first zone of opposite conductivity type is disposed in the single crystal region and a second zone of the one conductivity type is disposed in the first zone.

Abstract: Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500.degree. to about 1,300.degree. C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.