Abstract: Light state image sensors and systems are provided. The light state image sensor includes a plurality of pixels, each of which includes a plurality of sub-pixels. A diffraction layer is disposed adjacent a light incident surface side of the array includes a set of electrically conductive or semiconductive diffraction features for each pixel. Each set of diffraction features includes linear elements disposed along different radii extending from a centerline of the respective pixel. Non-linear scattering elements can also be included in each set of diffraction features. Light state information, such as color and polarization state, of light incident on a pixel is determined by comparing ratios of signals between pairs of sub-pixels to values stored in a calibration table.

Abstract: Color image sensors and systems are provided. A color image sensor as disclosed includes a plurality of pixels disposed within an array, each of which includes a plurality of sub-pixels. A diffraction layer is disposed adjacent a light incident surface side of the array of pixels. The diffraction layer provides a set of transparent diffraction features for each pixel. The diffraction features focus and diffract light onto the sub-pixels of the respective pixel. Color information regarding light incident on a pixel is determined by comparing ratios of signals between pairs of sub-pixels to a calibration table containing ratios of signals determined using incident light at a number of different, known wavelengths. A wavelength with signal ratios that result in a smallest difference as compared to the observed set of signal ratios is assigned as a color of the light incident on the pixel.

Abstract: An image sensor has an array of a tiling pattern of cells, each cell having at least one spiral nanowire circular polarizer formed of nanowires less than 80 nanometers in width; and photodiodes to receive incoming light form the circular polarizer. In embodiments, the polarizer is a descending spiral circular polarizer including at least four nanowires each about fifty nanometers wide at successive levels in the polarizer. In other embodiments, the circular polarizer comprises a flat spiral nanowire of width about seventy nanometers width, the flat spiral nanowire interrupted by cuts, disposed over multiple photodiodes to analyze a diffraction pattern from the polarizer.

Abstract: A polarization-sensitive infrared sensitive image sensor, including a plurality of pixels in a semiconductor substrate and forming a pixel array, each pixel including: at least one microlens; at least one photodiode; and at least one light absorbing patch above a corresponding photodiode, each light absorbing patch oriented at a predetermined angle with respect to each of the at least one light absorbing patch, the light absorbing patch absorbs a portion of incident light dependent on polarization of the incoming light relative to the predetermined angle of the light absorbing patch.

Abstract: An image sensor configured to resolve intensity and polarization has multiple pixels each having a single microlens adapted to focus light on a central photodiode surrounded by at least a first, a second, a third, and a fourth peripheral photodiodes, where a first polarizer at a first angle is disposed upon the first peripheral photodiode, a third polarizer at a third angle is disposed upon the third peripheral photodiode, a second polarizer at a second angle is disposed upon the second peripheral photodiode, and a fourth polarizer at a fourth angle is disposed upon the fourth peripheral photodiode, the first, second, third, and fourth angles being different. In embodiments, 4 or 8 peripheral photodiodes are provided, and in an embodiment the polarizers are parts of an octagonal polarizer.

Abstract: An image sensor configured to resolve intensity and polarization has multiple pixels each having a single microlens adapted to focus light on a central photodiode surrounded by at least a first, a second, a third, and a fourth peripheral photodiodes, where a first polarizer at a first angle is disposed upon the first peripheral photodiode, a third polarizer at a third angle is disposed upon the third peripheral photodiode, a second polarizer at a second angle is disposed upon the second peripheral photodiode, and a fourth polarizer at a fourth angle is disposed upon the fourth peripheral photodiode, the first, second, third, and fourth angles being different. In embodiments, 4 or 8 peripheral photodiodes are provided, and in an embodiment the polarizers are parts of an octagonal polarizer.

Abstract: An image sensor has diffractive microlenses over pixels with central structures and ring(s) of material having index of refraction different from that of background material. Disposed beneath the diffractive microlenses are photodiodes that permit determining ratios of illumination of peripheral photodiodes to illumination of central photodiodes of the pixels, and, in embodiments, circuitry for determining said ratio. In embodiments, the ratio is used to find illumination wavelengths; and in other embodiments the ratio is used to determine focus of an imaging lens providing illumination. A method determines color by passing light through a diffractive lens disposed above photodiodes of the diffractive pixel and determining color from illumination peripheral and central photodiodes. An autofocus method of determining focus includes passing light through a diffractive lens and determining focus from illumination of peripheral photodiodes and central photodiodes of the pixel.

Abstract: An imaging device may have an array of image sensor pixels that includes infrared pixels. The infrared pixels may be formed from a silicon layer and having an etched microlens on an upper surface of the silicon layer. The etched microlens may be formed as concentric circles, concentric squares, or other concentric shapes to improve the focusing of incident light on the photosensitive portion of the silicon layer. Additionally, there may be a plurality of silicon—silicon-oxide interfaces or silicon—silicon-nitride interfaces between the etched microlens and the silicon layer. These interfaces may increase the absorption of infrared light by the underlying silicon layer. Similar interfaces may be formed on a lower surface, either as an etched region or as an additional dielectric layer. Alternatively or additionally, the infrared pixels may include a conductive patch between the silicon layer and microlens that similarly increases the absorption of infrared light.

Abstract: An image sensor may include an array of image pixels that generate charge in response to light. To determine the color of the light, each image pixel may have a built-in diffusion grating and underlying photodiodes. The diffusion grating may diffract light in a wavelength-dependent manner, and the underlying photodiodes may detect a pattern of the diffracted light. Processing circuitry may store patterns corresponding to known colors. The processing circuitry may compare the detected pattern of the diffracted light to the patterns of light of the known colors, and thereby determine the color of the light through a process such as interpolating between the known patterns. This may eliminate the need for color filters in each pixel and increase the amount of detected light within each pixel. Image sensors having pixels with diffractive gratings may be used in cameras, microscopes, Raman spectrometers, and medical devices.

Abstract: Implementations of semiconductor devices may include: a microlens array formed of a plurality of microlenses. Each of the plurality of microlenses may have a first side and a second side. A layer of polymer may be formed over the second side of each of the plurality of microlenses and a low index box may be between adjacent microlenses of the plurality of microlenses.

Abstract: In one form, an optical touch screen system includes a semiconductor body forming a hybrid display and image sensor comprising a plurality of display pixels interspersed with a plurality of image sensor pixels, a spatial light modulator overlying a surface of the hybrid display and image sensor, and a control circuit for driving the plurality of display pixels with a first pattern and measuring a second pattern of the plurality of image sensor pixels, the control circuit analyzing the second pattern to detect a position of an object and selectively detecting a touch location in response to the second pattern.

Abstract: Implementations of image sensors may include a semiconductor layer including a photodiode, a metal layer or metal silicide layer directly coupled to a first side of the photodiode, and a storage node coupled within a second side of the photodiode. The metal layer or metal silicide layer may be configured to absorb one or more predetermined wavelengths of incident light and correspondingly heat a portion of the semiconductor layer.

Abstract: In one form, an optical touch screen system includes a semiconductor body forming a hybrid display and image sensor comprising a plurality of display pixels interspersed with a plurality of image sensor pixels, a spatial light modulator overlying a surface of the hybrid display and image sensor, and a control circuit for driving the plurality of display pixels with a first pattern and measuring a second pattern of the plurality of image sensor pixels, the control circuit analyzing the second pattern to detect a position of an object and selectively detecting a touch location in response to the second pattern.

Abstract: An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

Abstract: In one form, a touch screen includes an optically transmissive medium, first and second light sources, a detection circuit, and a control circuit. The first light source is positioned to emit light across the optically transmissive medium in a first direction, and the second light source is positioned to emit light across the optically transmissive medium in a second direction orthogonal to the first direction. The detection circuit detects standing wave patterns of light emitted by the first and second light sources along the first and second directions. The control circuit is coupled to the detection circuit and measures a first standing wave pattern in an untouched condition, and a second standing wave pattern in a touched condition. The control circuit detects a touch location in response to a difference between the first standing wave pattern and the second standing wave pattern.

Abstract: An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

Abstract: An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

Abstract: A front-side illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode, transistor gate structures, shallow trench isolation structures, and other associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures that are opaque to light may be formed over regions of the substrate to prevent the transistor gate structures, shallow trench isolation structures, and the other associated pixel circuits from being exposed to stray light. Buried light shielding structures formed in this way can help reduce optical pixel crosstalk.

Abstract: An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.

Abstract: An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.