Abstract: Double pass back side image (BSI) sensor systems and methods are disclosed. The BSI sensor may include a substrate, pixel reflectors formed on the substrate, and pixel photodiodes fabricated in the substrate, each pixel photodiode positioned over a respective one of the pixel reflectors. Micro-lenses may be formed over each photodiode and an image filter may be formed between the photodiodes and the micro-lenses. The pixels reflectors, photodiodes, micro-lenses, and filter may be formed using CMOS fabrication.

Abstract: A hologram projecting system includes a coherent light source for emitting a reference beam onto a real object; and an image sensor for receiving the reference beam and a scattered beam reflected from the real object, and recording a Fourier image of the real object. Also included is a modulator for receiving the Fourier image. The reference beam is passed through the modulator, and configured to interact with the Fourier image to form a virtual image of the real object. The image sensor includes an n×m pixel array, where n and m are numbers of rows and columns, respectively. The modulator includes an n×m pixel array corresponding to the n×m pixel array of the image sensor. The pixels in the n×m pixel array of the image sensor control transmissivity of light in corresponding pixels of the n×m pixel array of the modulator.

Abstract: Systems and methods for image sensing are disclosed. An image sensor includes a pixel having an active region and a plurality of reflective interfaces. The active region is configured to convert light absorbed by the pixel into an electrical signal. The plurality of reflective interfaces cause the light absorbed by the pixel to resonate within the active region. A method for converting absorbed light into an electrical signal with an image sensor includes absorbing light with the pixel of the image sensor, and reflecting the absorbed light with a plurality of reflective interfaces embedded in the pixel to generate a resonance within the active region.

Abstract: Image sensors may contain arrays of image sensor pixels, each of which includes a microlens and a photosensitive element. A multisection light guide that is made up of multiple light guide layers may be interposed between the microlens and the photosensitive element. The light guide layers may have alternating indicies of refraction to form a spectral filter. The lateral dimensions of the light guide layers may also be configured so that the light guide layers perform spectral filtering. Light guide shapes and sizes may be altered as a function of the lateral position of each image sensor pixel within the image sensor array. The uppermost light guide may be aligned with the microlens and the lowermost light guide may be aligned with the photosensitive element. The lateral positions of each light guide may be laterally shifted with respect to the next to form a staggered stack of light guides.

Abstract: Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.

Abstract: An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.

Abstract: Image sensors are provided for electronic imaging devices. An image sensor can be formed from an array of image pixels. Bragg-type multilayer interference filters can be formed for the image sensor using dielectric layers with alternating high and low indices of refraction. The multilayer interference filters can be configured to form band-pass filters of desired colors and infrared-blocking filters. Dielectric layers with non-flat bulk absorption properties may be used to tune the absorption of the filters. The interference filters may be provided in a uniform pattern so that an image sensor exhibits a monochrome response or may be arranged in a multicolor color filter array pattern such as a Bayer pattern.

Abstract: An imager having layers of light trapping material to reduce optical crosstalk and a method of forming the same.

Abstract: An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.

Abstract: Color filter arrays, methods of assembling color filter arrays, and systems containing color filter arrays. Color filter arrays are formed such that light entering through certain regions of the color filter array passes through multiple color filters to help prevent optical crosstalk and allow for tuning spectral responses.

Abstract: Color filter arrays, methods of assembling color filter arrays, and systems containing color filter arrays. Color filter arrays are formed such that light entering through certain regions of the color filter array passes through multiple color filters to help prevent optical crosstalk and allow for tuning spectral responses.

Abstract: A lens and its method of making. The lens includes a material having a lower index of refraction and a material having a higher index of refraction arranged in a pattern such that the lens has a gradient effective index of refraction.

Abstract: An imager having layers of light trapping material to reduce optical crosstalk and a method of forming the same.

Abstract: A silicon microlens and method of forming the microlens for focusing and steering light into the photosensitive region of a pixel. The microlens may be formed integrally within a silicon substrate or within a silicon layer over the substrate by performing a series of concentric etches of decreasing depth to produce a generally convex surface on the silicon substrate over the photosensitive region. A dielectric layer having an index of refraction of approximately half that of the silicon material is formed over the silicon microlens. The microlens may also be formed over the substrate by performing the etches over a polysilicon layer formed over the substrate.