Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

Abstract: Systems and methods of improving computing system interconnects may involve providing an upstream channel and a plurality of downstream channels. A passive matching node can be connected to the upstream channel and the downstream channels, wherein the matching node is configured to couple power between the upstream memory channel and the downstream channels. The matching node may also perform impedance matching as well as isolate two or more signals on the downstream channels from one another. In one example, the matching node includes a power divider/combiner.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: A socket may be formed with socket pins that include two spring biased arms biased to extend away from one another. The arms may be provided with tapered upper surfaces that engage contact holes on a pin guide 18 of an integrated circuit package, camming the socket pin arms together. The pin guide may have a tapered via structure that expands as it extends into the package. Thus, as the spring arms spread apart inside the pin guide, they may rotate through an angle which causes contacting surfaces on the spring arms and the pin guide to be parallel, creating good surface contact.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: An organic substrate, thin-film capacitor composite includes two plates that are accessed through deep and shallow vias. The organic substrate, thin-film capacitor composite includes integral structure with at least one trace in the organic substrate. The composite is able to be coupled with an interposer. The composite is also part of computing system.

Abstract: A package for integrated circuits is described. The package has a package substrate with a land side and an opposite die side, a first set of low level signal connectors on the die side to connect to an IC to be carried by the package, and a second set of low level signal connectors on the die side to connect to external components. The package may have power connectors on the land side or a power supply attached to the land side. A heat spreader or cooler may be attached to the die side.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

Abstract: An integrated circuit (IC) package includes a chip carrier and a chip mounted to the chip carrier. The chip carrier has a centrally located power delivery region and a peripherally located input-output (I/O) delivery region disposed in partially surrounding relationship to the power delivery region. Power and ground paths are disposed in the power delivery region and I/O signal paths are disposed in the I/O delivery region.

Abstract: An electronic device includes a material having a first dielectric constant (K) value, and a material having a second dielectric constant (K) value. The first dielectric constant (K) value is lower than the second dielectric constant (K) value. The electronic device also includes input/output connection conductors for transmitting signals to and from a die. The input/output connection conductors are routed through the material of the interposer having the first dielectric constant. The electronic device also includes power connection conductors for delivering power to the die, and ground connection conductors. The power and ground connection conductors are routed through the material having the second dielectric constant.

Abstract: An organic substrate, thin-film capacitor composite includes two plates that are accessed through deep and shallow vias. The organic substrate, thin-film capacitor composite includes integral structure with at least one trace in the organic substrate. The composite is able to be coupled with an interposer. The composite is also part of computing system.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.

Abstract: An electronic device includes a material having a first dielectric constant (K) value, and a material having a second dielectric constant (K) value. The first dielectric constant (K) value is lower than the second dielectric constant (K) value. The electronic device also includes input/output connection conductors for transmitting signals to and from a die. The input/output connection conductors are routed through the material of the interposer having the first dielectric constant. The electronic device also includes power connection conductors for delivering power to the die, and ground connection conductors. The power and ground connection conductors are routed through the material having the second dielectric constant.

Abstract: A package for integrated circuits is described. The package has a package substrate with a land side and an opposite die side, a first set of low level signal connectors on the die side to connect to an IC to be carried by the package, and a second set of low level signal connectors on the die side to connect to external components. The package may have power connectors on the land side or a power supply attached to the land side. A heat spreader or cooler may be attached to the die side.

Abstract: A package substrate for a microelectronic die is described. The package substrate has first terminals in a small area and second terminals in a larger area with conductors connecting the first and second terminals. The conductors are fairly narrow near the first terminals so that they can fit next to one another near the first terminals and before fanning out to the second terminals. The reference plane next to the conductors forms a step so that a first surface of the reference plane is closer to the conductors where they are narrow, and a second portion of the reference plane surrounding the first portion is further from the conductors where they are wider. The capacitance created between a respective conductor and the reference plane remains relatively constant per unit length because the reference plane is closer to the conductor where the conductor is narrow and further from the conductor where the conductor is wider.

Abstract: An integrated circuit (IC) package includes a chip carrier and a chip mounted to the chip carrier. The chip carrier has a centrally located power delivery region and a peripherally located input-output (I/O) delivery region disposed in partially surrounding relationship to the power delivery region. Power and ground paths are disposed in the power delivery region and I/O signal paths are disposed in the I/O delivery region.