Abstract: Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein. The substrate support assembly also includes a ceramic top plate having an electrode therein. A metal layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the metal layer, and the metal layer is in direct contact with the ceramic bottom plate.

Abstract: Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

Abstract: A substrate support assembly comprises a plurality of zones, a chuck comprising a ceramic body, and an additional assembly bonded to a lower surface of the chuck. The additional assembly comprises a second body and a plurality of temperature sensors disposed in or on the second body, wherein each zone of the plurality of zones includes at least one of the plurality of temperature sensors. A plurality of spatially tunable heating elements are disposed a) in or on the ceramic body or b) in or on the second body.

Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

Abstract: An electrostatic chuck includes a metal base plate, an electrostatic puck bonded to the metal base plate, and surface features on the surface of the electrostatic puck. The electrostatic puck includes an electrode embedded in the electrostatic puck. A surface of the electrostatic puck has a flatness of below 10 microns. The surface features include mesas and a sealing band around a perimeter of the electrostatic puck. The surface features have an average surface roughness of approximately 2-6 micro-inches. The corners of the surface features are not rounded.

Abstract: A substrate support assembly is described herein that includes a facility plate, a ground plate coupled to the facility plate, a fluid conduit disposed within the substrate support assembly disposed through the facility plate and the ground plate, and a connector coupled to the ground plate that houses a portion of the fluid conduit. The connector includes a biasing assembly and a fastener disposed in a pocket formed in the ground plate.

Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies may include a support stem coupled with the electrostatic chuck body. The support assemblies may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies may include a ground electrode embedded within the electrostatic chuck body. The support assemblies may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

Abstract: A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, a substrate support pedestal includes a ceramic body having a top surface and a bottom surface. The substrate support pedestal has a stem coupled to the bottom surface of the ceramic body. A top electrode is disposed within the ceramic body. A conductive rod is disposed through the stem and coupled to the top electrode. A plurality of heater elements is disposed within the ceramic body below the top electrode. A ground mesh is disposed within the ceramic body, below the plurality of heater elements, and above the bottom surface of the ceramic body.

Abstract: A workpiece carrier suitable for high power processes is described. It may include a puck to carry the workpiece, a plate bonded to the puck by an adhesive, a mounting ring surrounding the puck and the cooling plate, and a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive.

Abstract: Exemplary semiconductor substrate supports may include a platen configured to support a semiconductor substrate. The substrate supports may include a stem coupled with the platen. The substrate supports may include a heater embedded within the platen. The heater may include a metal wire and a barrier layer extending about the metal wire.

Abstract: Implementations described herein provide a substrate support assembly. The substrate support assembly has an electrostatic chuck having a workpiece supporting surface and a bottom surface. The substrate support assembly further includes a plurality of layers which has a thermal interface layer. The plurality of layers are disposed below the electrostatic chuck. A cooling base having a top surface, the top surface is disposed below the plurality of layers. A temperature differential across the thermal interface layer is about 150 degrees Celsius when the workpiece supporting surface of the electrostatic chuck is at a temperature of about 300 degrees Celsius.

Abstract: Implementations described herein provide a substrate support assembly. The substrate support assembly has a first ceramic plate having a workpiece supporting surface and a bottom surface. The first ceramic plate has a plurality of secondary heaters each forming a plurality of micro zones. The substrate support assembly has a second ceramic plate having an upper surface and a lower surface. A first metal bonding layer is disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate. A third ceramic plate has a top portion and a bottom portion. The third ceramic plate has primary heaters. A second metal bonding layer is disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

Abstract: Embodiments described herein relate a cleaning fixture and method to prevent chemical solutions from contacting the various substrate supporting member features and penetrating into the holes and the metal plate of the substrate supporting surface. The cleaning fixture includes a mounting plate having a plurality of thru-holes arranged on a bolt circle and configured to align with a plurality of thread holes disposed in an electrostatic chuck, a recess formed in the mounting plate, and a gas port formed through the mounting plate. A sealed plenum is formed between the recess of the mounting plate and a lower surface of the electrostatic chuck when the electrostatic chuck is coupled to the mounting plate. The gas port is fluidly coupled to the sealed plenum.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.

Abstract: A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.

Abstract: An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises AlN or Al2O3 and has a first coefficient of thermal expansion. The lower puck plate comprises a material having a second coefficient of thermal expansion that approximately matches the first coefficient of thermal expansion and is bonded to the upper puck plate by a first metal bond. The backing plate comprises AlN or Al2O3 and is bonded to the lower puck plate by a second metal bond.

Abstract: Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.