Patents by Inventor Vijay P. Singh

Vijay P. Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8529612
    Abstract: Materials and methods for producing localized hypothermia in a patient (e.g., for treatment of acute pancreatitis and pancreatic cancer).
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: September 10, 2013
    Assignee: Mayo Foundation for Medical Education and Research
    Inventor: Vijay P. Singh
  • Publication number: 20120046718
    Abstract: Materials and Methods for producing localized hypothermia in a patient for treatment of a weight disorder (e.g., obesity).
    Type: Application
    Filed: August 18, 2011
    Publication date: February 23, 2012
    Inventor: Vijay P. Singh
  • Publication number: 20100160339
    Abstract: This document provides methods and materials related to treating pancreatitis. For example, methods and materials relating to the use of a tyrosine kinase inhibitor to pancreatitis are provided.
    Type: Application
    Filed: May 13, 2008
    Publication date: June 24, 2010
    Applicant: MAYO FOUNDATION FOR MEDICAL EDUCATION AND RESEARCH
    Inventors: Mark A. McNiven, Vijay P. Singh
  • Publication number: 20100030190
    Abstract: Materials and Methods for producing localized hypothermia in a patient (e.g., for treatment of acute pancreatitis and pancreatic cancer).
    Type: Application
    Filed: June 24, 2009
    Publication date: February 4, 2010
    Inventor: Vijay P. Singh
  • Publication number: 20070289627
    Abstract: A nanoscale solar cell with vertical and lateral p-n junctions or Schottky barriers includes a light transparent or an opaque substrate with n- and p-type materials thereon. The size of the materials is tailored to optimize their bandgap energies. During use, photons impact the n and p type materials and generated electrons and holes travel through the materials to reach the vertical and horizontal junctions with reduced or neglible recombination loss, and thence to their respective electrodes. Representatively, the n-type material is CdS while the p-type material is CIS. Both are arranged in layers and thicknesses can vary. Fabrication includes forming an alumina template and filling voids with the materials to form n-p junctions. Thereafter, the template is removed and further junctions are formed by filling spaces left by the removed template. Organic semiconductor embodiments of the invention are also contemplated.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 20, 2007
    Inventors: Vijay P. Singh, Suresh Ks Rajaputra
  • Patent number: 4404734
    Abstract: A photovoltaic cell is formed by combining a spray process, forming a crystalline layer containing cadmium and sulfur, and an evaporation process, depositing copper chloride for converting to Cu.sub.x S. The crystals containing cadmium and sulfur are heated in an atmosphere of cadmium and chlorides to obtain crystals having at least one dimension greater than 0.5 micron and a planar layer of Cu.sub.x S is formed on the large crystals. A layer of Cu.sub.x S having a thickness of 0.5-1.0 micron is obtained. Electrodes are formed from evaporated gold or chromium or a metallic paste including silver or copper. Zn.sub.x Cd.sub.1-x S may be substituted for CdS through at least part of the crystalline layer for improved Voc.
    Type: Grant
    Filed: August 2, 1982
    Date of Patent: September 20, 1983
    Assignee: Photon Power, Inc.
    Inventor: Vijay P. Singh
  • Patent number: 4362896
    Abstract: A photovoltaic cell is formed by combining a spray process, forming a crystalline layer containing cadmium and sulfur, and an evaporation process, depositing copper chloride for converting to Cu.sub.x S. The crystals containing cadmium and sulfur are heated in an atmosphere of cadmium and chlorides to obtain crystals having at least one dimension greater than 0.5 micron and a planar layer of Cu.sub.x S is formed on the large crystals. A layer of Cu.sub.x S having a thickness of 0.5-1.0 micron is obtained. Electrodes are formed from evaporated gold or chromium or a metallic paste including silver or copper. Zn.sub.x Cd.sub.1-x S may be substituted for CdS through at least part of the crystalline layer for improved Voc.
    Type: Grant
    Filed: October 28, 1980
    Date of Patent: December 7, 1982
    Assignee: Photon Power, Inc.
    Inventor: Vijay P. Singh
  • Patent number: 4178395
    Abstract: A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.
    Type: Grant
    Filed: November 30, 1977
    Date of Patent: December 11, 1979
    Assignee: Photon Power, Inc.
    Inventors: John F. Jordan, Vijay P. Singh