Abstract: Memory devices may have a memory array and a delay locked loop (DLL) circuit that adjusts signals associated with operations to access of the memory array. The memory device may also include a controller that delays an access command to access the memory array by transmitting the access command through delay circuitry of the DLL circuit. This may cause the access command to be delayed by a first duration of time when output from the delay circuitry. Delay of the access command may align a data signal and the access command such that the access command and a system clock may cause latching of suitable data of the data signal.

Abstract: Separate inter-die connectors for data and error correction information and related apparatuses, methods, and computing systems are disclosed. An apparatus including a master die, a target die, inter-die data connectors, and inter-die error correction connectors. The target die includes data storage elements. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct write data bits from the master die to the target die. The write data bits are written to the data storage elements. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are configured to conduct error correction information corresponding to the write data bits from the master die to the target die. The target die includes error correction circuitry configured to generate new error correction information responsive to the write data bits received from the master die.

Abstract: Memory devices may have a memory array and a delay locked loop (DLL) circuit that adjusts signals associated with operations to access of the memory array. The memory device may also include a controller that delays an access command to access the memory array by transmitting the access command through delay circuitry of the DLL circuit. This may cause the access command to be delayed by a first duration of time when output from the delay circuitry. Delay of the access command may align a data signal and the access command such that the access command and a system clock may cause latching of suitable data of the data signal.

Abstract: Separate inter-die connectors for data and error correction information and related systems, methods, and devices are disclosed. An apparatus includes a master die, a target die including data storage elements, inter-die data connectors, and inter-die error correction connectors. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct data between the master die and the target die. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are separate from the inter-die data connectors. The inter-die error correction connectors are configured to conduct error correction information corresponding to the data between the master die and the target die.

Abstract: A memory device includes cyclic redundancy check (CRC) circuitry configured to indicate whether an error has been detected in transmission of data from a host device to the memory device. The CRC circuitry includes a synchronous counter that is configured to synchronize a count with a system clock and to transmit the count. The CRC circuitry also includes pulse width control circuitry that is configured to receive the synchronized count from the synchronous counter and to generate pulse width controls based at least in part on the synchronized count. Furthermore, the CRC circuitry includes synchronization circuitry that is configured to receive the pulse width controls and to generate an error alert signal based at least in part on the pulse width controls.

Abstract: Memory devices may have a memory array and a delay locked loop (DLL) circuit that adjusts signals associated with operations to access of the memory array. The memory device may also include a controller that delays an access command to access the memory array by transmitting the access command through delay circuitry of the DLL circuit. This may cause the access command to be delayed by a first duration of time when output from the delay circuitry. Delay of the access command may align a data signal and the access command such that the access command and a system clock may cause latching of suitable data of the data signal.

Abstract: A device may include a first die having a first circuit and a second die having a second circuit. The die may be separated by a material layer. The material layer may include multiple through-silicon vias (TSVs) for electrically coupling the first die to the second die. A first TSV of the TSVs may electrically couple the first circuit to the second circuit and a second TSV of the TSVs may include a redundant TSV that electrically bypasses the first TSV to couple the first circuit to the second circuit if a fault is detected in the first TSV.

Abstract: Methods of operating a memory device are disclosed. A method may include receiving, at a first die of a number of dies, a first number of bits including one or more command bits, one or more identification bits, and a first number of address bits associated with a command during a first clock cycle. The method may further include conveying, from the first die to at least one other die, at least some of the first number of bits. Further, the method may include receiving, at the first die, a second number of bits including a second number of address bits associated with the command during a second, subsequent clock cycle. Also, the method may include conveying, from the first die to the at least one other die, at least some of the second number of bits. Memory devices and electronic systems are also disclosed.

Abstract: A memory device includes cyclic redundancy check (CRC) circuitry configured to indicate whether an error has been detected in transmission of data from a host device to the memory device. The CRC circuitry includes a synchronous counter that is configured to synchronize a count with a system clock and to transmit the count. The CRC circuitry also includes pulse width control circuitry that is configured to receive the synchronized count from the synchronous counter and to generate pulse width controls based at least in part on the synchronized count. Furthermore, the CRC circuitry includes synchronization circuitry that is configured to receive the pulse width controls and to generate an error alert signal based at least in part on the pulse width controls.

Abstract: As described, a device may include detection circuitry to detect a deck of a memory array. The deck may include a conductive identifier coupled between a logic high voltage node and the detection circuitry a control circuit coupled to the detection circuit. The control circuit may perform operations including transmitting a test enable signal to the detection circuitry. The detection circuitry may generate a valid signal indicative of an existence of the conductive identifier of the deck in response to the test enable signal. The operations may also include the control circuit receiving the valid signal from the detection circuitry and adjusting a memory operation associated with the memory array based at least in part on the valid signal.

Abstract: As described, a device may include detection circuitry to detect a deck of a memory array. The deck may include a conductive identifier coupled between a logic high voltage node and the detection circuitry a control circuit coupled to the detection circuit. The control circuit may perform operations including transmitting a test enable signal to the detection circuitry. The detection circuitry may generate a valid signal indicative of an existence of the conductive identifier of the deck in response to the test enable signal. The operations may also include the control circuit receiving the valid signal from the detection circuitry and adjusting a memory operation associated with the memory array based at least in part on the valid signal.

Abstract: Separate inter-die connectors for data and error correction information and related systems, methods, and devices are disclosed. An apparatus includes a master die, a target die including data storage elements, inter-die data connectors, and inter-die error correction connectors. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct data between the master die and the target die. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are separate from the inter-die data connectors. The inter-die error correction connectors are configured to conduct error correction information corresponding to the data between the master die and the target die.

Abstract: Devices and methods include organizing memory units of a memory device into a number of groups. The devices and methods also include self-refreshing each group of memory units on different corresponding sequential clock pulses of a self-refresh clock. Specifically, at least one of each group of memory units counts pulses of a self-refresh clock and invokes a self-refresh after every nth pulse of a cycle of pulses while not invoking a self-refresh on all other pulses of the cycle of pulses.

Abstract: A memory device includes a first data driver configured to send according to a first clock signal a first data to a first data port; a second data driver configured to send according to a second clock signal a second data to a second data port, wherein the second clock signal does not match the first clock signal.

Abstract: Methods of operating a memory device are disclosed. A method may include receiving, at a first die of a number of dies, a first number of bits including one or more command bits, one or more identification bits, and a first number of address bits associated with a command during a first clock cycle. The method may further include conveying, from the first die to at least one other die, at least some of the first number of bits. Further, the method may include receiving, at the first die, a second number of bits including a second number of address bits associated with the command during a second, subsequent clock cycle. Also, the method may include conveying, from the first die to the at least one other die, at least some of the second number of bits. Memory devices and electronic systems are also disclosed.

Abstract: A memory device includes a first data driver configured to send a first data according to a first clock signal; a first data port electrically coupled to the first data driver, the first data port configured to receive the first data; a second data driver configured to send a second data according to a second clock signal, wherein the second clock signal does not match the first clock signal; and a second data port electrically coupled to the second data driver, the second data port configured to receive the second data.

Abstract: A memory device includes: a set of input pads configured to receive from a source external to the memory device one or more input signals and a chip select signal; an operation circuit electrically coupled to the input pads, operation circuit configured to perform operations corresponding to the one or more input signals when the chip select signal is enabled; and an input management circuit electrically coupled to and between the input pads and the operation circuit, the input management circuit configured to control propagation of the one or more input signals based on the chip select signal.

Abstract: Aspects of the present disclosure eliminating the need for a memory device to have both a shifter that shifts input pin values from an input domain into a parity domain and another shifter that shifts a decoded command from the input domain into the parity domain. A memory device can achieve this by, when parity is being performed, shifting the input from the input pins into the parity domain prior to decoding the command. Using a multiplexer, the decoder can receive the command pin portion of the shifted input when parity checking is being performed and can receive the un-shifted command pin input when parity checking is not being performed. The decoder can use the command pin portion of the shifted input to generate shifted and decoded commands or can use the un-shifted command pin input to generate decoded commands.

Abstract: Apparatuses and methods for trimming input buffers based on identified mismatches. An example apparatus includes an input buffer having a first input stage circuit configured to receive a first signal, a second input stage circuit configured to receive a second signal, and an output stage coupled to the first and second input stage circuits and configured to provide an output signal. The first input stage circuit includes serially-coupled transistor pairs that are each coupled between the output stage and a bias voltage. Each of the plurality of serially-coupled transistors pairs are selectively enabled in response to a respective enable signal. The apparatus further including a trim circuit coupled to the first input stage circuit and comprising a plurality of programmable components. The trim circuit is configured to be programmed to provide the respective enable signals based on a detected transition voltage offset relative to a target transition voltage.

Abstract: Systems and methods providing for a parity error synchronization based on a programmed parity latency value by delaying an activation of a command disable signal to disable internal commands such that the command disable signal activates just prior to the parity error command.