Patents by Inventor Vikram M. Bhosle
Vikram M. Bhosle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240035154Abstract: A method of cleaning a plasma chamber is disclosed. Periodically, a cleaning process is performed. The cleaning process comprises introducing a mixture of fluoride molecules and argon into the plasma chamber and creating a plasma. The fluoride molecules are ionized and interact with the deposited material on the chamber walls. This causes the fluorine ions to bond to the deposited material, which typically results in a gas that can be exhausted from the plasma chamber. When the deposited material has been removed, the amount of free fluorine within the plasma chamber increases. This increase in fluorine may be used to determine when the plasma chamber is cleaned.Type: ApplicationFiled: July 27, 2022Publication date: February 1, 2024Inventors: Vikram M. Bhosle, Meng Cai, Deven Matthew Raj Mittal, Vincent Deno
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Publication number: 20240006158Abstract: A method for reducing a wet etch rate of flowable chemical vapor deposition (FCVD) oxide layers in a semiconductor wafer, the method including performing a plasma doping operation on the semiconductor wafer using a primary dopant gas and a diluent gas adapted to reduce a wet etch rate of the FCVD oxide layer, wherein the dopant gas and the diluent gas are supplied by a gas source of a plasma doping system, wherein the diluent gas is provided in an amount of 0.01%-5% by volume of the total amount of gas supplied by the gas source 36 during the plasma doping operation, and wherein the primary dopant gas is He and the diluent gas is selected from a group including of CH4, CO, CO2, and CF2.Type: ApplicationFiled: June 30, 2022Publication date: January 4, 2024Applicant: Applied Materials, Inc.Inventors: Vikram M. Bhosle, Timothy J. Miller, Jun Seok Lee, Deven Raj Mittal
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Publication number: 20230282451Abstract: A plasma doping system including a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece, a source of ionizable gas coupled to the chamber, the ionizable gas containing a desired dopant for implantation into the workpiece, a plasma source for producing a plasma having a plasma sheath in a vicinity of the workpiece, the plasma containing positive ions of the ionizable gas, and accelerating said positive ions across the plasma sheath toward the platen for implantation into the workpiece, a shield ring surrounding the platen and adapted to extend the plasma sheath beyond an edge of the workpiece, and a cover ring disposed on top of the shield ring and adapted to mitigate sputtering of the shield ring, wherein the cover ring comprises a crystalline base layer and a non-crystalline top layer.Type: ApplicationFiled: March 5, 2022Publication date: September 7, 2023Inventors: Vikram M. Bhosle, Timothy J. Miller, Eric D. Hermanson, Christopher J. Leavitt, Jordan B. Tye
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Patent number: 11615945Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.Type: GrantFiled: August 13, 2021Date of Patent: March 28, 2023Assignee: APPLIED Materials, Inc.Inventors: Vikram M. Bhosle, Christopher J. Leavitt, Guillermo Colom, Timothy J. Miller
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Patent number: 11501972Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.Type: GrantFiled: July 22, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Vikram M. Bhosle, Nicholas P. T. Bateman, Timothy J. Miller, Jun Seok Lee, Deven Raj Mittal
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Publication number: 20220028693Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.Type: ApplicationFiled: July 22, 2020Publication date: January 27, 2022Inventors: Vikram M. Bhosle, Nicholas P.T. Bateman, Timothy J. Miller, Jun Seok Lee, Deven Raj Mittal
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Publication number: 20210375590Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.Type: ApplicationFiled: August 13, 2021Publication date: December 2, 2021Applicant: APPLIED Materials, Inc.Inventors: Vikram M. Bhosle, Christopher J. Leavitt, Guillermo Colom, Timothy J. Miller
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Patent number: 11120973Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.Type: GrantFiled: May 10, 2019Date of Patent: September 14, 2021Assignee: Applied Materials, Inc.Inventors: Vikram M. Bhosle, Christopher J. Leavitt, Guillermo Colom, Timothy J. Miller
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Publication number: 20200357611Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.Type: ApplicationFiled: May 10, 2019Publication date: November 12, 2020Applicant: APPLIED Materials, Inc.Inventors: Vikram M. Bhosle, Christopher J. Leavitt, Guillermo Colom, Timothy J. Miller
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Patent number: 10804075Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.Type: GrantFiled: November 14, 2016Date of Patent: October 13, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P T Bateman, Timothy J. Miller, Vikram M. Bhosle
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Patent number: 10446371Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.Type: GrantFiled: January 2, 2018Date of Patent: October 15, 2019Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero
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Patent number: 10290466Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.Type: GrantFiled: November 10, 2017Date of Patent: May 14, 2019Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P. T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
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Publication number: 20180122618Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.Type: ApplicationFiled: January 2, 2018Publication date: May 3, 2018Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero
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Publication number: 20180068830Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.Type: ApplicationFiled: November 10, 2017Publication date: March 8, 2018Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
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Patent number: 9887067Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.Type: GrantFiled: April 21, 2015Date of Patent: February 6, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero
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Patent number: 9865430Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.Type: GrantFiled: November 23, 2015Date of Patent: January 9, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
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Patent number: 9780250Abstract: An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.Type: GrantFiled: January 14, 2016Date of Patent: October 3, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram M. Bhosle, Timothy J. Miller, Tapash Chakraborty, Prerna Goradia, Robert J. Visser
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Publication number: 20170207361Abstract: An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.Type: ApplicationFiled: January 14, 2016Publication date: July 20, 2017Inventors: Vikram M. Bhosle, Timothy J. Miller, Tapash Chakraborty, Prerna Goradia, Robert J. Visser
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Publication number: 20170062182Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas PT Bateman, Timothy J. Miller, Vikram M. Bhosle
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Patent number: 9524849Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.Type: GrantFiled: November 26, 2013Date of Patent: December 20, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas PT Bateman, Timothy J. Miller, Vikram M. Bhosle