Abstract: A method of processing a solar cell is disclosed, where the edges of the solar cell are covered, coated or masked during the ion implantation process and/or the screen printing process. This covering may be a substance that blocks the penetration of ions during implantation, or may be a substance that resists the diffusion of fritted metal paste during the metallization process. In some embodiments, the edges are covered during both of these processes. In further embodiments, the same material may perform both functions.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Abstract: A method of processing a solar cell is disclosed, where the edges of the solar cell are covered, coated or masked during the ion implantation process and/or the screen printing process. This covering may be a substance that blocks the penetration of ions during implantation, or may be a substance that resists the diffusion of fritted metal paste during the metallization process. In some embodiments, the edges are covered during both of these processes. In further embodiments, the same material may perform both functions.

Abstract: A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.

Abstract: A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.

Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.

Abstract: Methods of creating a workpiece having a smooth side and a textured side are disclosed. In some embodiments, a first side of a workpiece is doped, using ion implantation or diffusion, to create a doped layer. This doped layer of the first side may be more resistant to chemical treatment than the second side of the workpiece. This allows the second side of the workpiece to be textured without capping or otherwise protecting the doped first side, even though the doped layer of the first side physically contacts the chemical treatment. In some embodiments, a p-type dopant is used to create the doped layer. In some embodiments, the workpiece is processed to form a solar cell.