Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: A method for filling a gap in a substrate is disclosed. The method includes providing a substrate with a gap in a reaction chamber, forming first active species from a first reactant to create an inhibition layer near the top of the gap, and performing one or more deposition cycles to deposit material into the gap. Each deposition cycle involves introducing a second reactant to form a chemisorbed layer and generating a second active species from a third reactant using pulsed plasma power, which reacts with the chemisorbed layer to form a deposited layer. The inhibition layer partially inhibits deposition at the top of the gap. The deposited material comprises silicon nitride, which is subsequently converted to silicon oxide by providing a fourth reactant containing hydrogen and oxygen. This conversion results in volume expansion and improved gap filling.

Abstract: Methods for forming boron nitride layer on a surface of a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise the steps of providing a substrate withing a reaction chamber; and executing at least one deposition cycle. The deposition cycle comprises providing a boron precursor into the reaction chamber, the boron precursor comprising boron halide; and providing a reactive species generated from a plasma produced from a reactant gas into the reaction chamber.

Abstract: Methods for forming a layer comprising boron carbon nitride on a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a boron halide precursor pulse that comprises exposing the substrate to a boron precursor and a carbon-containing precursor pulse that comprises exposing the substrate to a carbon-containing precursor. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

Abstract: A method for filling a gap includes providing a substrate in a reaction chamber, wherein the substrate comprises a gap. The method includes depositing a metal nitride layer having a first volume into the gap. The method includes converting the metal nitride layer into a metal oxide layer having a second volume. The second volume is greater than the first volume.

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

Abstract: A method for depositing a silicon carbide layer on a substrate is disclosed. The method including: providing a substrate in a reaction chamber; providing a precursor and a reactant in the reaction chamber and forming a soft plasma in the reaction chamber; and purging the reaction chamber. Further, it included providing an inert gas in the reaction chamber and forming a strong plasma in the reaction chamber with a larger power than the soft plasma.

Abstract: Methods for filling a gap on a substrate with a carbon-containing material are disclosed. Exemplary method includes providing a substrate comprising a gap into a reaction chamber and executing a plurality of deposition cycles. Each deposition cycle comprises providing a first precursor into the reaction chamber in vapor phase and providing a reactive species into the reaction chamber, wherein the first precursor comprises carbon.

Abstract: The current disclosure relates to a method of etching etchable material from a semiconductor substrate. The method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.

Abstract: Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The current disclosure relates to a method of etching etchable material from a semiconductor substrate. The method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.

Abstract: The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method includes providing a substrate having a gap in a reaction chamber and providing a first precursor into the reaction chamber in a vapor phase, wherein the first precursor comprises at least one unsaturated carbon-carbon bond, a silicon atom, and at least one oxygen atom. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one carbon-carbon unsaturated bond is a double bond.

Abstract: A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a vacuum ultraviolet radiation, and an optional anneal.

Abstract: Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.