Patents by Inventor Vinay K. PRABHAKAR

Vinay K. PRABHAKAR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220020615
    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Pathak, Vinay K. Prabhakar, Badri N. Ramamurthi, Viren Kalsekar, Juan Carlos Rocha-Alvarez
  • Publication number: 20210287924
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assembly may include a ceramic material characterized by a grain size of less than or about 5 ?m.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Paul L. Brillhart, Juan Carlos Rocha-Alvarez, Abdul Aziz Khaja, Vinay K. Prabhakar, Kwangduk Douglas Lee, Chidambara A. Ramalingam, Venkata Sharat Chandra Parimi
  • Publication number: 20210159048
    Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.
    Type: Application
    Filed: November 25, 2019
    Publication date: May 27, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Xiaoquan Min, Zheng John Ye, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Lu Xu, Kwangduk Douglas Lee
  • Publication number: 20210082696
    Abstract: A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.
    Type: Application
    Filed: March 1, 2019
    Publication date: March 18, 2021
    Inventors: Xiaoquan MIN, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Vinay K. PRABHAKAR
  • Publication number: 20210066039
    Abstract: One or more embodiments described herein generally relate to a semiconductor processing apparatus that utilizes high radio frequency (RF) power to improve uniformity. The semiconductor processing apparatus includes an RF powered primary mesh and an RF powered secondary mesh, which are disposed in a substrate supporting element. The secondary RF mesh is positioned underneath the primary RF mesh. A connection assembly is configured to electrically couple the secondary mesh to the primary mesh. RF current flowing out of the primary mesh is distributed into multiple connection junctions. As such, even at high total RF power/current, a hot spot on the primary mesh is prevented because the RF current is spread to the multiple connection junctions. Accordingly, there is less impact on substrate temperature and film non-uniformity, allowing much higher RF power to be used without causing a local hot spot on the substrate being processed.
    Type: Application
    Filed: August 7, 2020
    Publication date: March 4, 2021
    Inventors: Jian LI, Viren KALSEKAR, Paul BRILLHART, Juan Carlos ROCHA-ALVAREZ, Vinay K. PRABHAKAR
  • Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Publication number: 20210043455
    Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
    Type: Application
    Filed: March 21, 2019
    Publication date: February 11, 2021
    Inventors: Byung Seok KWON, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Bushra AFZAL, Sungwon HA, Vinay K. PRABHAKAR, Viren KALSEKAR, Satya Teja Babu THOKACHICHU, Edward P. HAMMOND, IV
  • Publication number: 20210017645
    Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.
    Type: Application
    Filed: April 9, 2019
    Publication date: January 21, 2021
    Inventors: Lu XU, Byung Seok KWON, Viren KALSEKAR, Vinay K. PRABHAKAR, Prashant Kumar KULSHRESHTHA, Dong Hyung LEE, Kwangduk Douglas LEE
  • Publication number: 20200373132
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Application
    Filed: March 10, 2020
    Publication date: November 26, 2020
    Inventors: Viren KALSEKAR, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI
  • Publication number: 20200365370
    Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.
    Type: Application
    Filed: April 23, 2020
    Publication date: November 19, 2020
    Inventors: Fei WU, Abdul Aziz KHAJA, Sungwon HA, Vinay K. PRABHAKAR, Ganesh BALASUBRAMANIAN
  • Publication number: 20200362457
    Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Prashant Kumar KULSHRESHTHA, Anjana M. PATEL, Abdul Aziz KHAJA, Viren KALSEKAR, Vinay K. PRABHAKAR, Satya Teja Babu THOKACHICHU, Byung Seok KWON, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN
  • Publication number: 20200234932
    Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.
    Type: Application
    Filed: December 4, 2019
    Publication date: July 23, 2020
    Inventors: Venkata Sharat Chandra PARIMI, Zubin HUANG, Jian LI, Satish RADHAKRISHNAN, Rui CHENG, Diwakar N. KEDLAYA, Juan Carlos ROCHA-ALVAREZ, Umesh M. KELKAR, Karthik JANAKIRAMAN, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR, Byung Seok KWON
  • Publication number: 20200224310
    Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
    Type: Application
    Filed: December 16, 2019
    Publication date: July 16, 2020
    Inventors: Sarah Michelle BOBEK, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR, Kwangduk Douglas LEE, Sungwon HA, Jian LI
  • Publication number: 20200176296
    Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.
    Type: Application
    Filed: November 7, 2019
    Publication date: June 4, 2020
    Inventors: Abdul Aziz KHAJA, Venkata Sharat Chandra PARIMI, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR
  • Publication number: 20190382889
    Abstract: Implementations of the present disclosure generally provide improved methods for cleaning a vacuum chamber to remove adsorbed contaminants therefrom prior to a chamber seasoning process while maintaining the chamber at desired deposition processing temperatures. The contaminants may be formed from the reaction of cleaning gases with the chamber components and the walls of the vacuum chamber.
    Type: Application
    Filed: May 24, 2019
    Publication date: December 19, 2019
    Inventors: Venkata Sharat Chandra PARIMI, Zhijun JIANG, Ganesh BALASUBRAMANIAN, Vivek Bharat SHAH, Shailendra SRIVASTAVA, Amit Kumar BANSAL, Xinhai HAN, Vinay K. PRABHAKAR
  • Publication number: 20190378696
    Abstract: Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.
    Type: Application
    Filed: June 3, 2019
    Publication date: December 12, 2019
    Inventors: Sai Susmita ADDEPALLI, Satish KATAMBLI, Mayur Govind KULKARNI, Hanish Kumar PANAVALAPPIL KUMARANKUTTY, Vinay K. PRABHAKAR, Edward P. HAMMOND, IV, Juan Carlos ROCHA
  • Publication number: 20190341232
    Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.
    Type: Application
    Filed: April 23, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Abdul Aziz KHAJA, Vinay K. PRABHAKAR
  • Publication number: 20190341227
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Sarah Michelle BOBEK, Abdul Aziz KHAJA, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE