Abstract: An input buffer for CMOS integrated circuits using sub-micron CMOS technology is affected by the presence of high voltage between various ports of a device. An improvement for such a buffer provides an input voltage limiting circuit making the device mode tolerant to high voltages while using low voltage tolerant CMOS devices. This improvement also reduces the switching level uncertainty due to manufacturing process variations by adding compensation devices to a first inverter stage in the input buffering stage so as to increase noise margin. A hysteresis characteristic is produced by the circuit thus reducing the effect of manufacturing process variation. The circuit can be easily interfaced to other blocks and safely operates in conjunction with relatively high voltage CMOS technology circuitry while achieving the high-speed advantage of thin gate oxide. Low power consumption is achieved by avoiding the possibility of DC current flow in the circuitry.

Abstract: The present invention provides an improved form of inverter circuit which refines the known conventional circuit to reduce its offset and then uses a combination of this refined circuit and a feedback type power converter to achieve low output offset, very high speed and very high current efficiency. According to a first aspect of the present invention there is provided a voltage converter circuit comprising serially coupled first and second gain stages and switching means arranged between the second gain stage and an output for the converter circuit, the first gain stage having a gain greater than that of the second gain stage, and the second gain stage having a bandwidth greater than that of the first gain stage.