Abstract: A tool that suppresses or altogether eliminates arcing between a substrate pedestal and substrate is disclosed. The tool includes a processing chamber, a substrate pedestal for supporting a substrate within the processing chamber, and shower head positioned within the processing chamber. The shower head is arranged to dispense gas that is turned into a plasma, which develops a DC self-bias potential on the substrate surface. The tool also includes a bias control system configured to induce a DC potential to the substrate at a deliberate target electrical potential.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: A substrate support configured to support a substrate having a diameter D comprises a first inner electrode and a second inner electrode that are each D-shaped, define a first outer diameter that is less than D, and are configured to be connected to an electrostatic chuck voltage to clamp the substrate to the substrate support. An outer electrode comprises a ring-shaped outer portion that surrounds the first inner electrode and the second inner electrode and a center portion that pass between the first inner electrode and the second inner electrode to connect to opposite sides of an inner diameter of the ring-shaped outer portion. The inner diameter of the ring-shaped outer portion is greater than the diameter D such that the inner diameter of the ring-shaped outer portion and intersections between the center portion and the ring-shaped outer portion are located radially outside of the diameter D of the substrate.

Abstract: A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.

Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.

Abstract: A substrate processing system includes a substrate support and a power supply circuit. The substrate support is configured to support a substrate, wherein the substrate support comprises one or more heating elements. The power supply circuit includes: a direct current-to-alternating current converter configured to convert a first direct current voltage to a first alternating current voltage, where the direct current-to-alternating current converter comprises at least one switch; and an isolation circuit comprising one of a coupled inductor or a transformer. The one of the coupled inductor or the transformer is configured to convert the first alternating current voltage to and second alternating current voltage and isolate the one or more heating elements from an earth ground. The power supply circuit is configured to provide an output voltage to the one or more heating elements based on the second alternating current voltage.

Abstract: A method includes: receiving a first signal from a first sensor at a first filter and preventing passage of a first portion of the first signal via the first filter. The first portion of the first signal is at a first RF. A second portion of the first signal is indicative of a first temperature of a first electrode in a plasma chamber. The method further includes: outputting a second signal from the first filter; receiving the second signal at a second filter; and preventing passage of a portion of the second signal via the second filter. The portion of the second signal is at a second RF. The second RF is less than the first RF. The first filter and the second filter are implemented on a printed circuit board. The method further includes adjusting a temperature of the first electrode based on an output of the second filter.

Abstract: An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: Various embodiments include an apparatus to retrofit into an electrostatic chuck (ESC) of an existing plasma-based processing system. The apparatus includes a tube adapter portion having a dielectric coating formed on an inner surface of the tube adapter portion to prevent arcing between high voltage electrodes within the tube adapter portion and a main body of the tube adapter portion during an operation of the plasma-based processing system, a number of insulative tubes with the high voltage electrodes to be enclosed therein, and an enlarged gap portion of the tube adapter portion proximate outboard ones of the plurality of insulative tubes to prevent arcing. Other methods of forming the ESC, and related devices, apparatuses, and systems are disclosed.

Abstract: A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts and supports the substrate. Areal density of the mesas monotonically increases as a radial distance from a center of the substrate support increases.

Abstract: A Chemical Vapor Deposition (CVD) tool that suppresses or altogether eliminates arcing between a substrate pedestal and substrate. The CVD tool includes a Direct Current (DC) bias control system arranged to maintain a substrate pedestal provided in a processing chamber at a same or substantially the same DC bias voltage as developed by a plasma in the processing chamber. By maintaining the substrate pedestal and the substrate having the same potential as the plasma at the same or substantially the same voltage potential, arcing is suppressed or altogether eliminated.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

Abstract: A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts and supports the substrate. Areal density of the mesas monotonically increases as a radial distance from a center of the substrate support increases.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

Abstract: Embodiments of the invention generally provide an electrochemical plating cell having an electrolyte container assembly configured to hold a plating solution therein, a head assembly positioned above the electrolyte container, the head assembly being configured to support a substrate during an electrochemical plating process, and an anode assembly positioned in a lower portion of the electrolyte container. The anode assembly generally includes a copper member having a substantially planar upper surface, at least one groove formed into the substantially planar upper surface, each of the at least one grooves originating in a central portion of the substantially planar anode surface and terminating at a position proximate a perimeter of the substantially planar upper surface, and at least one fluid outlet positioned at a perimeter of the substantially planar upper anode surface.

Abstract: Embodiments of the invention generally provide an electrochemical plating cell having an electrolyte container assembly configured to hold a plating solution therein, a head assembly positioned above the electrolyte container, the head assembly being configured to support a substrate during an electrochemical plating process, and an anode assembly positioned in a lower portion of the electrolyte container. The anode assembly generally includes a copper member having a substantially planar upper surface, at least one groove formed into the substantially planar upper surface, each of the at least one grooves originating in a central portion of the substantially planar anode surface and terminating at a position proximate a perimeter of the substantially planar upper surface, and at least one fluid outlet positioned at a perimeter of the substantially planar upper anode surface.