Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Abstract: A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Abstract: A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Abstract: A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in the faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.

Abstract: A wafer support assembly including a wafer support and cooling plate with radial thermal chokes is provided. The cooling plate and wafer support may have limited contact and may not contact each other outside of certain limited thermal contact patches. The thermal contact patches may generally define one or more radial thermal choke regions. In some implementations, high- and low-temperature cooling systems may be placed at one or more locations across the cooling plate to assist in temperature management.

Abstract: A technique and apparatus are provided for supplying substantially uniform radiant heat energy to a semiconductor wafer in a load lock or process chamber using a light source and a set of radially-symmetric reflectors.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in a faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.

Abstract: A wafer support assembly including a wafer support and cooling plate with radial thermal chokes is provided. The cooling plate and wafer support may have limited contact and may not contact each other outside of certain limited thermal contact patches. The thermal contact patches may generally define one or more radial thermal choke regions. In some implementations, high- and low-temperature cooling systems may be placed at one or more locations across the cooling plate to assist in temperature management.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

Abstract: An apparatus for securing a substrate in an electrochemical deposition system is provided. The apparatus generally includes a substrate support member adapted to receive the substrate and a thrust plate assembly adapted to exert a downward force on the substrate. For some embodiments, a first sealing member adapted to engage a plating surface of the substrate may be attached to the substrate support member. The apparatus may also include a second sealing member adapted to engage a non-plating surface of the substrate or a surface of the substrate support member to prevent the flow of plating fluid to a non-plating surface of the substrate. The apparatus may also include electrical contacts to electrically contact the plating or non-plating surface of the substrate.

Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

Abstract: A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.

Abstract: Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

Abstract: A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.

Abstract: An apparatus for securing a substrate in an electrochemical deposition system is provided. The apparatus generally includes a substrate support member adapted to receive the substrate and a thrust plate assembly adapted to exert a downward force on the substrate. For some embodiments, a first sealing member adapted to engage a plating surface of the substrate may be attached to the substrate support member. The apparatus may also include a second sealing member adapted to engage a non-plating surface of the substrate or a surface of the substrate support member to prevent the flow of plating fluid to a non-plating surface of the substrate. The apparatus may also include electrical contacts to electrically contact the plating or non-plating surface of the substrate.

Abstract: A substrate support and method for reducing the migration of a conductive material is provided. In one embodiment, a support includes a chuck body having a support side and a backside. A guard electrode is disposed within the chuck body proximate the backside of the chuck body. In another aspect, a method for reducing the migration of a conductive material is provided. In one embodiment, the method includes the steps of disposing a guard electrode proximate a backside of the substrate support and applying a voltage to the guard electrode.