Abstract: A method and apparatus for reducing the thermal gradients within substrate support such as a ceramic wafer support pedestal. Specifically, the present invention is a heater controller that limits the amount of power that is applied to a resistive heater embedded within a ceramic pedestal. The heater controller comprises the necessary circuitry for limiting the amount of power applied to one or more zones with respect to a single other zone. Said heater controller also contains the necessary circuitry to detect faulty or misconnected wires between heater controller and the zones to be heated.

Abstract: An apparatus and a method for detecting the presence and position of a wafer upon a semiconductor wafer support pedestal surface. Specifically, a wafer detector comprising a plurality of electrodes on a surface of the wafer support pedestal. The electrodes are coupled to a capacitance measurement circuit that measures the capacitance between the electrodes and generates a signal corresponding to a wafer's presence, location and chucking condition. The wafer's presence completes an electrical circuit between the electrodes, increasing the capacitance between the electrodes. As such, the presence of a wafer, the position of the wafer, and the condition of the wafer, i.e., wafer damage, can be detected upon a wafer support pedestal during wafer processing.

Abstract: An apparatus which includes a laminated ceramic body with multilayer electrodes and a method of fabricating this apparatus are disclosed. The laminated ceramic body is formed by layers of ceramic material, with portions of certain layers being silk screened with an intermediate layer of electrically conductive material. Subsequent sintering results in the formation of a solid ceramic body with multilayer electrodes made up of the electrically conductive material layers. The apparatus further comprises an electrical connector extending partially into the ceramic body and intersecting at least one of these electrodes.

Abstract: A conductive feed-through providing a conductive path through a dielectric body while maintaining differences in pressure between volumes separated by the dielectric body. A conductive feed-through of the present invention employs a hollow conductive tube created by first drilling a bore through the dielectric material. A first electrode is used to cover one end of the bore, and a vacuum-tight seal is formed around this first electrode. A second electrode is attached to the dielectric body at the other end of the bore. The inside surface of the bore is then coated with an electrically conductive material, and the coating provides a conductive path between the first electrode and the second electrode. In an alternative embodiment, the electrically conductive material coating is deposited such that it extends over the surface of the dielectric body so as to function as an electrode as well.

Abstract: An apparatus and a method for detecting the presence and position of a wafer upon a semiconductor wafer support pedestal surface. Specifically, a wafer detector comprising a plurality of electrodes on a surface of the wafer support pedestal. The electrodes are coupled to a capacitance measurement circuit that measures the capacitance between the electrodes and generates a signal corresponding to a wafer's presence, location and chucking condition. The wafer's presence completes an electrical circuit between the electrodes, increasing the capacitance between the electrodes. As such, the presence of a wafer, the position of the wafer, and the condition of the wafer, i.e., wafer damage, can be detected upon a wafer support pedestal during wafer processing.

Abstract: A monopolar electrostatic chuck having a conductive pedestal base with a dielectric layer deposited thereupon. Upon the top surface of the dielectric layer is deposited a wafer spacing mask fabricated from a conduction material. The wafer spacing mask contains a plurality of support members that support a workpiece in a spaced apart relation with respect to said dielectric layer. At least one of said support members in said plurality of support members is adapted for connection to a power supply. The chucking voltage power supply is connected between the conductive pedestal base and the wafer support mask. In this manner, the workpiece is attracted to and thereby retained on the chuck without a plasma being generated proximate the wafer.

Abstract: An electrostatic chuck containing apparatus, and a concomitant method, for balancing the electrostatic force that the chuck imparts upon a workpiece. More specifically, the electrostatic chuck contains a chuck body having a pair of coplanar electrodes embedded therein and a wafer spacing mask containing a plurality of conductive support members deposited upon a support surface of the chuck body. The support members maintain a wafer, or other workpiece, in a spaced-part relation with respect to the support surface of the chuck body. Each electrode within the chuck is respectively connected to a terminal dual voltage power supply having a center tap. The center tap of the power supply is connected to the wafer spacing mask.

Abstract: A method and apparatus for determining the state of contamination of an electrostatic chuck. The method consists of applying a voltage to at least one of the chuck electrodes and measuring a leakage current to any of the chuck electrodes. The measured current is compared to a first threshold value. If the measured current is greater than the first threshold value, the chuck is deemed contaminated.

Abstract: An insulated wafer spacing mask for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer spacing mask contains a plurality of support members deposited upon an insulating material located between the wafer spacing mask and the support surface of the chuck. The support members maintain a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the support members. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer and current leakage through the wafer is minimized.

Abstract: An electrostatic chuck containing apparatus, and a concomitant method, for balancing the electrostatic force that the chuck imparts upon a workpiece. More specifically, the electrostatic chuck contains a chuck body having a pair of coplanar electrodes embedded therein and a wafer spacing mask containing a plurality of conductive support members deposited upon a support surface of the chuck body. The support members maintain a wafer, or other workpiece, in a spaced-part relation with respect to the support surface of the chuck body. Each electrode within the chuck is respectively connected to a terminal dual voltage power supply having a center tap. The center tap of the power supply is connected to the wafer spacing mask.

Abstract: A monopolar electrostatic chuck having a conductive pedestal base with a dielectric layer deposited thereupon. Upon the top surface of the dielectric layer is deposited a wafer spacing mask fabricated from a conduction material. The wafer spacing mask contains a plurality of support members that support a workpiece in a spaced apart relation with respect to said dielectric layer. At least one of said support members in said plurality of support members is adapted for connection to a power supply. The chucking voltage power supply is connected between the conductive pedestal base and the wafer support mask. In this manner, the workpiece is attracted to and thereby retained on the chuck without a plasma being generated proximate the wafer.

Abstract: A wafer spacing mask for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer spacing mask contains a plurality of metallic support members deposited upon the support surface of the chuck. The support members maintain a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the support members. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing.