Patents by Inventor Vincent Ku
Vincent Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20060213558Abstract: Embodiments of the invention relate to an apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. In one embodiment, a valve assembly includes a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly further includes a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston. In another embodiment, the cylinder forms an actuation chamber having an internal volume of about 3.0 cm3.Type: ApplicationFiled: May 11, 2006Publication date: September 28, 2006Inventors: Vincent Ku, Ling Chen, Dien-Yeh Wu
-
Publication number: 20060213557Abstract: Embodiments of the invention relate to a substrate processing chamber. In one embodiment a substrate processing chamber includes a chamber body containing a substrate support, a lid assembly comprising an expanding channel extending from a central portion of the lid assembly to a peripheral portion of the lid assembly and positioned to substantially cover the substrate support, and one or more valves adapted to provide one or more reactants into the chamber body. The valves comprising a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly comprises a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston.Type: ApplicationFiled: May 11, 2006Publication date: September 28, 2006Inventors: Vincent Ku, Ling Chen, Dien-Yeh Wu
-
Publication number: 20060019494Abstract: Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.Type: ApplicationFiled: September 21, 2005Publication date: January 26, 2006Inventors: Wei Cao, Hua Chung, Vincent Ku, Ling Chen
-
Patent number: 6972267Abstract: Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.Type: GrantFiled: March 4, 2003Date of Patent: December 6, 2005Assignee: Applied Materials, Inc.Inventors: Wei Cao, Hua Chung, Vincent Ku, Ling Chen
-
Publication number: 20050189072Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.Type: ApplicationFiled: May 2, 2005Publication date: September 1, 2005Inventors: Ling Chen, Vincent Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
-
Publication number: 20050173068Abstract: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered.Type: ApplicationFiled: March 11, 2005Publication date: August 11, 2005Inventors: Ling Chen, Vincent Ku, Dien-Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima
-
Patent number: 6916398Abstract: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered.Type: GrantFiled: December 21, 2001Date of Patent: July 12, 2005Assignee: Applied Materials, Inc.Inventors: Ling Chen, Vincent Ku, Dien-Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima
-
Publication number: 20040069227Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.Type: ApplicationFiled: October 9, 2002Publication date: April 15, 2004Applicant: Applied Materials, Inc.Inventors: Vincent Ku, Ling Chen, Howard Grunes, Hua Chung
-
Publication number: 20030224600Abstract: Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.Type: ApplicationFiled: March 4, 2003Publication date: December 4, 2003Inventors: Wei Cao, Hua Chung, Vincent Ku, Ling Chen
-
Publication number: 20030121608Abstract: An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.Type: ApplicationFiled: October 25, 2002Publication date: July 3, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Ling Chen, Vincent Ku, Dien-Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima, Mei Chang
-
Publication number: 20030124262Abstract: A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.Type: ApplicationFiled: October 25, 2002Publication date: July 3, 2003Inventors: Ling Chen, Hua Chung, Sean M. Seutter, Michael X. Yang, Ming Xi, Vincent Ku, Dien-Yeh Wu, Alan Ouye, Norman Nakashima, Barry Chin, Hong Zhang
-
Publication number: 20030079686Abstract: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered.Type: ApplicationFiled: December 21, 2001Publication date: May 1, 2003Inventors: Ling Chen, Vincent Ku, Dien-Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima
-
Patent number: 6527865Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.Type: GrantFiled: June 16, 2000Date of Patent: March 4, 2003Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Charles Dornfest, Leonid Selyutin, Jun Zhao, Vincent Ku, Xiao Liang Jin
-
Patent number: 6302965Abstract: A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face.Type: GrantFiled: August 15, 2000Date of Patent: October 16, 2001Assignee: Applied Materials, Inc.Inventors: Salvador Umotoy, Vincent Ku, Xiaoxiong Yuan, Lawrence Chung-Lai Lei
-
Patent number: 6299692Abstract: A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.Type: GrantFiled: July 21, 2000Date of Patent: October 9, 2001Assignee: Applied Materials, Inc.Inventors: Vincent Ku, Ming Xi, Xiaoxiong Yuan, Anzhong Chang, Anh N. Nguyen
-
Patent number: 6258170Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: September 11, 1997Date of Patent: July 10, 2001Assignee: Applied Materials, Inc.Inventors: Sasson Somekh, Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Vincent Ku, Chris Wang, Frank Chang, Po Tang
-
Patent number: 6096134Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: August 1, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Charles Dornfest, Vincent Ku, Frank Chang, Visweswaren Sivaramakrishnan
-
Patent number: 6082714Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: July 4, 2000Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Jun Zhao, Vincent Ku, Po Tang, Talex Sajoto, Frank Chang
-
Patent number: 6066209Abstract: The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.Type: GrantFiled: March 31, 1998Date of Patent: May 23, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Jun Zhao, Vincent Ku, Charles Dornfest
-
Patent number: 6063199Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: May 16, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Vincent Ku, Jun Zhao, Charles Dornfest