Abstract: A multi-function modular storage light unit including a primary housing unit and detachable modules such as a radio and an auxiliary flashlight. The primary housing unit contains a spotlight, a power switch, and a handle to carry the unit. There is also a storage compartment built into the primary housing unit. The modules preferably include belt clips for hands-free transport. The modules are removably attached to the primary unit by way of an attachment mechanism which may include alignment features and a latching mechanism. The modules may alternatively be removably attached by their belt clips to sleeves arranged on the primary housing. Each of the detachable modules and the spotlight is independently powered.

Abstract: A non-volatile memory device includes a plurality of MOS transistors 34 and 36 connected to respective word lines 16 and 18 to allow individual pages of memory stored in the memory cells 8a, 10a and 8b, 10b on the respective word lines 16 and 18 to be erased and erase verified. A method of erasing a page of memory cells includes the steps of applying an erase voltage to one of the MOS transistors 16 and 18 to erase the page of memory cells along the respective word line, and applying an initial erase-inhibit floating voltage to other MOS transistors which are connected to the word lines unselected for page erase. In an erase verify mode, an erase verify voltage is applied to the word line which was selected for page erase in the erase mode, and an erase verify unselect voltage is applied to the word lines which was not selected for page erase.

Abstract: In the programming of a non-volatile memory device, such as a NAND flash memory device 100, a positive bias voltage V.sub.bias is applied to a bit line 44 to set a respective memory gate 44a in a programmed state. In a further embodiment, the positive bias voltage V.sub.bias is obtained by dividing the select drain gate voltage V.sub.cc using two resistors 56 and 58 connected in series.

Abstract: Two NMOS boost transistors have their sources connected to the high voltage input while their drains and gates are cross-connected. Two coupling capacitors connect two alternate phase clocks to the gates of the two cross-connected boost transistors. An NMOS pass transistor has its gate connected to the drain of one of the NMOS boost transistors, its source connected to the high voltage input, and its drain connected to the output. In an embodiment, two diode-connected regulation transistors connect the gates of the boost transistors to the high voltage input. These connections insure that the gates of the boost transistors and the gate of the pass transistor never reach voltages higher than one threshold voltage above the high voltage input. In another embodiment, two discharge transistors have their drains connected to a decode input, their sources connected to the gates of the boost transistors, and their gates connected to the positive power supply.

Abstract: A modular flashlight is formed from three parts which are screwed together--a battery housing, a switch housing, and a head. An O-ring at each screw connection provides a substantially watertight seal. A bulb is mounted in the switch housing and a reflector is mounted in the head. Rotation of the head relative to the switch housing varies the focus of the light reflected by the reflector. The head can be removed from the switch housing so that the bulb can provide candle illumination.