Patents by Inventor Vincent M. Omarjee
Vincent M. Omarjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11679156Abstract: The disclosure relates to a manufactured composition, material or device comprising at least two different nonradioactive isotope atoms. Each nonradioactive isotope atom is present in an amount sufficient to increase the total amount of the nonradioactive isotope atom above the total amount found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount. The ratio(s) of the at least two nonradioactive isotopes in the manufactured composition, material or device are measurably different than the ratio(s) found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount.Type: GrantFiled: November 1, 2018Date of Patent: June 20, 2023Assignees: American Air Liquide, Inc., Airgas, Inc., L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Tracey Jacksier, Mani Matthew, Anthony W. Reccek, Jr., Martin Vasarhelyi, Vincent M. Omarjee
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Publication number: 20220296717Abstract: The disclosure relates to a manufactured composition, material or device comprising at least two different nonradioactive isotope atoms. Each nonradioactive isotope atom is present in an amount sufficient to increase the total amount of the nonradioactive isotope atom above the total amount found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount. The ratio(s) of the at least two nonradioactive isotopes in the manufactured composition, material or device are measurably different than the ratio(s) found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount.Type: ApplicationFiled: November 1, 2018Publication date: September 22, 2022Inventors: Tracey JACKSIER, Mani MATTHEW, Anthony W. RECCEK, Martin VASARHELYI, Vincent M. OMARJEE
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Patent number: 11430663Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.Type: GrantFiled: March 3, 2020Date of Patent: August 30, 2022Assignees: American Air Liquide, Inc., L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Air Liquide Electronics U.S. LPInventors: Vijay Surla, Rahul Gupta, Hui Sun, Venkateswara R. Pallem, Nathan Stafford, Fabrizio Marchegiani, Vincent M. Omarjee, James Royer
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Patent number: 11152223Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: GrantFiled: July 3, 2019Date of Patent: October 19, 2021Assignee: American Air Liquide, Inc.Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
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Patent number: 10720335Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: GrantFiled: August 28, 2018Date of Patent: July 21, 2020Assignees: American Air Liquide, Inc., L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Air Liquide Electronics U.S. LPInventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
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Publication number: 20200203174Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.Type: ApplicationFiled: March 3, 2020Publication date: June 25, 2020Inventors: Vijay Surla, Rahul Gupta, Hui Sun, Venkateswara R. Pallem, Nathan Stafford, Fabrizio Marchegiani, Vincent M. Omarjee, James Royer
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Patent number: 10607850Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.Type: GrantFiled: December 30, 2016Date of Patent: March 31, 2020Assignees: American Air Liquide, Inc., Air Liquide Electronics U.S. LP, L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Vijay Surla, Rahul Gupta, Hui Sun, Venkateswara R. Pallem, Nathan Stafford, Fabrizio Marchegiani, Vincent M. Omarjee, James Royer
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Publication number: 20190326129Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: ApplicationFiled: July 3, 2019Publication date: October 24, 2019Inventors: Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD, Christian DUSSARRAT
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Patent number: 10381240Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: GrantFiled: September 14, 2016Date of Patent: August 13, 2019Assignee: American Air Liquide, Inc.Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
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Publication number: 20180366336Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: ApplicationFiled: August 28, 2018Publication date: December 20, 2018Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
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Patent number: 10103031Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: GrantFiled: September 8, 2017Date of Patent: October 16, 2018Assignees: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LPInventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
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Publication number: 20180076046Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: ApplicationFiled: September 8, 2017Publication date: March 15, 2018Inventors: Peng SHEN, Christian DUSSARRAT, Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD
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Patent number: 9892932Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: GrantFiled: June 17, 2015Date of Patent: February 13, 2018Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LPInventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
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Publication number: 20170103901Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.Type: ApplicationFiled: June 17, 2015Publication date: April 13, 2017Applicant: American Air Liquide, Inc.Inventors: Peng SHEN, Christian DUSSARRAT, Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD
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Publication number: 20170032976Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: ApplicationFiled: September 14, 2016Publication date: February 2, 2017Inventors: Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD, Christian DUSSARRAT
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Patent number: 9514959Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: GrantFiled: October 30, 2013Date of Patent: December 6, 2016Assignee: American Air Liquide, Inc.Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
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Publication number: 20150294880Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.Type: ApplicationFiled: October 30, 2013Publication date: October 15, 2015Inventors: Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD, Christian DUSSARRAT
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Patent number: 9121093Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).Type: GrantFiled: July 9, 2010Date of Patent: September 1, 2015Assignee: American Air Liquide, Inc.Inventors: Christian Dussarrat, Clément Lansalot-Matras, Vincent M. Omarjee, Andrey V. Korolev
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Patent number: 9045509Abstract: Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.Type: GrantFiled: August 13, 2010Date of Patent: June 2, 2015Assignee: American Air Liquide, Inc.Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
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Publication number: 20140322924Abstract: Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration.Type: ApplicationFiled: July 11, 2014Publication date: October 30, 2014Inventors: Christian DUSSARRAT, Glenn KUCHENBEISER, Vincent M. OMARJEE, Ziyun WANG