Patents by Inventor Vincent M. Omarjee

Vincent M. Omarjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Alkali earth metal precursors for depositing calcium and strontium containing films
    Patent number: 8852460
    Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: October 7, 2014
    Assignees: Air Liquide Electronics U.S. LP, American Air Liquide, Inc.
    Inventors: Olivier Letessier, Christian Dussarrat, Benjamin J. Feist, Vincent M. Omarjee
  • Methods of making and deposition methods using hafnium- or zirconium-containing compounds
    Patent number: 8765220
    Abstract: Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: July 1, 2014
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • METAL FILM DEPOSITION
    Publication number: 20130202794
    Abstract: Disclosed are modified Atomic Layer Deposition processes used to deposit metal films on a substrate.
    Type: Application
    Filed: May 27, 2011
    Publication date: August 8, 2013
    Applicant: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee
  • HIGH CARBON CONTENT MOLECULES FOR AMORPHOUS CARBON DEPOSITION
    Publication number: 20130109198
    Abstract: The disclosure relates to a method of depositing amorphous carbon on a substrate using at least one carbon containing molecule having at least one carbon atom the method comprising the steps of supplying the carbon containing molecule and carrying out the deposition to thereby form a deposited amorphous carbon on the substrate, wherein a carbon to hydrogen ratio of the molecule is equal to or more than 0.7.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 2, 2013
    Applicant: AMERICAN AIR LIQUIDE, INC.
    Inventors: Christian DUSSARRAT, Vincent M. OMARJEE
  • PLASMA-ENHANCED DEPOSITION OF TITANIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE TITANIUM PRECURSORS
    Publication number: 20130089681
    Abstract: The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
    Type: Application
    Filed: October 7, 2011
    Publication date: April 11, 2013
    Applicants: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Clement Lansalot-Matras
  • PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS
    Publication number: 20130089679
    Abstract: The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.
    Type: Application
    Filed: October 7, 2011
    Publication date: April 11, 2013
    Applicants: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Clement Lansalot-Matras
  • PLASMA-ENHANCED DEPOSITION OF NICKEL-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE NICKEL PRECURSORS
    Publication number: 20130089678
    Abstract: The disclosure relates to a process for depositing a Nickel or Cobalt containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C.
    Type: Application
    Filed: October 7, 2011
    Publication date: April 11, 2013
    Applicant: American Air Liquide, Inc.
    Inventors: Christian DUSSARRAT, Vincent M. OMARJEE, Clement LANSALOT-MATRAS
  • PLASMA-ENHANCED DEPOSITION OF RUTHENIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE RUTHENIUM PRECURSORS
    Publication number: 20130089680
    Abstract: The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
    Type: Application
    Filed: October 7, 2011
    Publication date: April 11, 2013
    Applicant: American Air Liquide, Inc.
    Inventors: Christian DUSSARRAT, Vincent M. OMARJEE, Clement LANSALOT-MATRAS
  • PLASMA-ENHANCED DEPOSITION OF COPPER-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE COPPER PRECURSORS
    Publication number: 20130084407
    Abstract: The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Applicant: American Air Liquide, Inc.
    Inventors: Christian DUSSARRAT, Clement LANSALOT-MATRAS, Vincent M. OMARJEE
  • Aluminum implant using new compounds
    Patent number: 8367531
    Abstract: The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: February 5, 2013
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Vincent M. Omarjee, Christian Dussarrat, Jean-Marc Girard, Nicolas Blasco
  • SILANE BLEND FOR THIN FILM VAPOR DEPOSITION
    Publication number: 20130022745
    Abstract: Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
    Type: Application
    Filed: August 13, 2010
    Publication date: January 24, 2013
    Applicant: AMERICAN AIR LIQUIDE, INC.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • Metal precursors for deposition of metal-containing films
    Patent number: 8349738
    Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: January 8, 2013
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Clement Lansalot-Matras, Christian Dussarrat, Vincent M. Omarjee, Cheng-Fang Hsiao
  • High C content molecules for C implant
    Patent number: 8343860
    Abstract: The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: January 1, 2013
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Vincent M. Omarjee, Christian Dussarrat, Jean-Marc Girard, Nicolas Blasco
  • BIS-KETOIMINATE COPPER PRECURSORS FOR DEPOSITION OF COPPER-CONTAINING FILMS
    Publication number: 20120321817
    Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
    Type: Application
    Filed: July 9, 2010
    Publication date: December 20, 2012
    Inventors: Christian Dussarrat, Clément Lansalot-Matras, Vincent M. Omarjee, Andrey V. Korolev
  • PLASMA ASHING COMPOUNDS AND METHODS OF USE
    Publication number: 20120227762
    Abstract: Disclosed are compounds for plasma ashing photoresist layers on a substrate and methods of using the same. The plasma ashing compounds induce limited to no damage to the underlying layer, such as the low-k film layer.
    Type: Application
    Filed: October 14, 2010
    Publication date: September 13, 2012
    Applicant: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME
    Publication number: 20120207927
    Abstract: Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
    Type: Application
    Filed: August 13, 2010
    Publication date: August 16, 2012
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • METHODS OF MAKING AND DEPOSITION METHODS USING HAFNIUM- OR ZIRCONIUM-CONTAINING COMPOUNDS
    Publication number: 20120207928
    Abstract: Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.
    Type: Application
    Filed: November 5, 2010
    Publication date: August 16, 2012
    Applicant: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS
    Publication number: 20120122313
    Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
    Type: Application
    Filed: November 10, 2011
    Publication date: May 17, 2012
    Applicants: American Air Liquide, Inc., L'Air Liquide Societe Anonyme pour I'Etude et I'Exploitation des Procedes Georges Claude
    Inventors: Christian Dussarrat, Clement Lansalot-Matras, Vincent M. Omarjee, Cheng-Fang Hsiao
  • Metal precursors for deposition of metal-containing films
    Patent number: 8076243
    Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: December 13, 2011
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Clement Lansalot-Matras, Vincent M. Omarjee, Cheng-Fang Hsiao
  • METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS
    Publication number: 20100193951
    Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
    Type: Application
    Filed: January 26, 2010
    Publication date: August 5, 2010
    Inventors: Christian Dussarrat, Clement LANSALOT-MATRAS, Vincent M. Omarjee, Cheng-Fang Hsiao