Abstract: A method is disclosed for metallizing a substrate comprising an interconnect feature in the manufacture of a microelectronic device, wherein the interconnect feature comprises a bottom, a sidewall, and a top opening having a diameter, D. The method comprises the following steps: depositing a barrier layer on the bottom and the sidewall of the interconnect feature, the barrier layer comprising a metal selected from the group consisting of ruthenium, tungsten, tantalum, titanium, iridium, rhodium, and combinations thereof; contacting the substrate comprising the interconnect feature comprising the bottom and sidewall having the barrier layer thereon with an aqueous composition comprising a reducing agent and a surfactant; and depositing copper metal onto the bottom and the sidewall of the interconnect feature having the barrier layer thereon.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

Abstract: An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

Abstract: A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.

Abstract: An electrically conductive paint for applying to substrates to make articles of manufacture including EMI/RFI shielded housings of electronic components and printing plates comprises a cross-linked organic resin binder containing cross-linkable functional groups such as OH groups, electrically conductive metallic particles, preferably a mixture of silver flakes and silver-coated copper flakes, a solvent, a cross-linking agent which cross-links with itself and with the functional groups of the organic binder and preferably a catalyst which accelerates cross-linking of the cross-linking agent and organic binder. Using such a paint formulation it has been found that thinner coatings can be used while still exceeding the properties needed for EMI/RFI shielding of housing for electronic components.

Abstract: An electrically conductive paint for providing EMI/RFI shielding for housings of electronics components comprises a cross-linked organic resin binder containing cross-linkable functional groups such as OH groups, electrically conductive metallic particles, preferably a mixture of silver flakes and silver-coated copper flakes, a solvent, a cross-linking agent which cross-links with itself and with the functional groups of the organic binder and preferably a catalyst which accelerates cross-linking of the cross-linking agent and organic binder. Using such a paint formulation it has been found that thinner coatings can be used while still exceeding the properties needed for EMI/RFI shielding of housing for electronic components. A rheological additive which is an organic derivative of castor oil is preferably used to control the viscosity and spraying characteristics of the paint especially in a paint composition containing silver coated copper flakes.

Abstract: The present invention relates to an improved metallic additive free palladium electroplating bath comprising the use of a sulfonic acid compound in combination with a special class of pyridine related nitrogen compounds to both stabilize the bath and to provide white palladium deposits over a wide range of plating thicknesses.

Abstract: A method for producing smooth metal coatings on zincated aluminum substrates using a specially formulated zincating bath containing an additive comprising a bath soluble cationic condensation polymer represented by the general formula: ##STR1## wherein: Z represents a group of atoms necessary to complete a heterocylic compound having a five or six membered ring containing at least 2 nitrogen atoms;R is nothing or the alkyl group of an alkylating agent;X is Cl, Br or I, andn is >1.

Abstract: A vinyl-pyridine or vinyl-quinoline quaternary derivative is provided to enhance the brightness and operating properties of tin aqueous sulfuric acid plating baths.