Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

Abstract: A method for enhancing corrosion resistance of a tin-based surface on a workpiece involving contacting the tin-based surface with a composition comprising a phosphonic acid compound and water to form a phosphorus-based film over the tin-based coating thereby inhibiting corrosion of the tin-based surface. Phosphonic acid containing compositions having a concentration up to about 30 vol. % of an organic solvent, and water.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.

Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Abstract: An electrically conductive paint for applying to substrates to make articles of manufacture including EMI/RFI shielded housings of electronic components and printing plates comprises a cross-linked organic resin binder containing cross-linkable functional groups such as OH groups, electrically conductive metallic particles, preferably a mixture of silver flakes and silver-coated copper flakes, a solvent, a cross-linking agent which cross-links with itself and with the functional groups of the organic binder and preferably a catalyst which accelerates cross-linking of the cross-linking agent and organic binder. Using such a paint formulation it has been found that thinner coatings can be used while still exceeding the properties needed for EMI/RFI shielding of housing for electronic components.

Abstract: An electrically conductive paint for providing EMI/RFI shielding for housings of electronics components comprises a cross-linked organic resin binder containing cross-linkable functional groups such as OH groups, electrically conductive metallic particles, preferably a mixture of silver flakes and silver-coated copper flakes, a solvent, a cross-linking agent which cross-links with itself and with the functional groups of the organic binder and preferably a catalyst which accelerates cross-linking of the cross-linking agent and organic binder. Using such a paint formulation it has been found that thinner coatings can be used while still exceeding the properties needed for EMI/RFI shielding of housing for electronic components. A rheological additive which is an organic derivative of castor oil is preferably used to control the viscosity and spraying characteristics of the paint especially in a paint composition containing silver coated copper flakes.

Abstract: The present invention relates to an improved metallic additive free palladium electroplating bath comprising the use of a sulfonic acid compound in combination with a special class of pyridine related nitrogen compounds to both stabilize the bath and to provide white palladium deposits over a wide range of plating thicknesses.

Abstract: A method for producing smooth metal coatings on zincated aluminum substrates using a specially formulated zincating bath containing an additive comprising a bath soluble cationic condensation polymer represented by the general formula: ##STR1## wherein: Z represents a group of atoms necessary to complete a heterocylic compound having a five or six membered ring containing at least 2 nitrogen atoms;R is nothing or the alkyl group of an alkylating agent;X is Cl, Br or I, andn is >1.

Abstract: A vinyl-pyridine or vinyl-quinoline quaternary derivative is provided to enhance the brightness and operating properties of tin aqueous sulfuric acid plating baths.